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SNOS455G May 2000 – September 2015 LM4050-N , LM4050-N-Q1

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

DBZ|3
- MPDS108G

散热焊盘机械数据 (封装 | 引脚)

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6 Specifications

6.1 Absolute Maximum Ratings

See ⁽¹⁾,⁽²⁾

	MIN	MAX	UNIT
Reverse Current		20	mA
Forward Current		10	mA
Power Dissipation (T_A = 25°C)⁽¹⁾		280	mW
Maximum Junction Temperature ⁽²⁾		150	°C
Storage Temperature	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
		Charged device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000
		Machine model (MM)	±200

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾⁽¹⁾

		MIN	MAX	UNIT
Industrial Temperature Range	Ambient Temperature Range	–40	85	°C
Industrial Temperature Range	Junction Temperature Range	–40	85	°C
Extended Temperature Range	Ambient Temperature Range	–40	125	°C
Extended Temperature Range	Junction Temperature	–40	125	°C

(1) Recommended Operating Conditions are conditions under the device is intended to be functional. For specifications and conditions, see Electrical Characteristics section.

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		LM4050-N/-Q1	UNIT
		DBZ (SOT-23)
		3 PINS
R_θJA	Junction-to-ambient thermal resistance	287	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	106.6	°C/W
R_θJB	Junction-to-board thermal resistance	57.7	°C/W
ψ_JT	Junction-to-top characterization parameter	5.5	°C/W
ψ_JB	Junction-to-board characterization parameter	56.4	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	N/A	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics: 2-V Option

All other limits T_A = T_J = 25°C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1%, ±0.2%, and 0.5% respectively.

PARAMETER		TEST CONDITIONS		TYP⁽³⁾	MAX⁽⁴⁾	UNIT
V_R	Reverse Breakdown Voltage	I_R = 100 μA		2.048		V
	Reverse breakdown voltage tolerance⁽⁵⁾	I_R = 100 μA	LM4050AIM3, LM4050AEM3		±2.048	mV
			LM4050BIM3, LM4050BEM3		±4.096
			LM4050CIM3, LM4050CEM3		±1024
		Industrial temperature range T_A = T_J = T_MIN to T_MAX	LM4050AIM3, LM4050AEM3		±9.0112
			LM4050BIM3, LM4050BEM3		±11.4688
			LM4050CIM3, LM4050CEM3		±14.7456
		Extended temperature range T_A = T_J = T_MIN to T_MAX	LM4050AIM3, LM4050AEM3		±12.288
			LM4050BIM3, LM4050BEM3		±14.7456
			LM4050CIM3, LM4050CEM3		±17.2032
I_RMIN	Minimum operating current	T_A = T_J = 25°C		41	60	μA
I_RMIN	Minimum operating current	T_A = T_J = T_MIN to T_MAX			65	μA
ΔV_R/ΔT	Average reverse breakdown voltage temperature coefficient⁽⁵⁾	I_R = 10 mA		±20		ppm/°C
		I_R = 1 mA		±15
		I_R = 100 μA, T_A = T_J = 25°C		±15
		I_R = 100 μA, T_A = T_J = T_MIN to T_MAX			±50
ΔV_R/ΔI_R	Reverse breakdown voltage change with operating current change⁽⁶⁾	I_RMIN ≤ I_R ≤ 1 mA, T_A = T_J = 25°C		0.3	0.8	mV
		I_RMIN ≤ I_R ≤ 1 mA, T_A = T_J = T_MIN to T_MAX			1.2
		1 mA ≤ I_R ≤ 15 mA, T_A = T_J = 25°C		2.3	6
		1 mA ≤ I_R ≤ 15 mA, T_A = T_J = T_MIN to T_MAX			8
Z_R	Reverse dynamic impedance	I_R = 1 mA, f = 120 Hz, I_AC = 0.1 I_R		0.3		Ω
e_N	Wideband noise	I_R = 100 μA, 10 Hz ≤ f ≤ 10 kHz		34		μV_rms
ΔV_R	Reverse breakdown voltage long term stability	t = 1000 hrs, T = 25°C ±0.1°C, I_R = 100 μA		120		ppm
V_HYST	Thermal hysteresis ⁽⁷⁾	ΔT = −40°C to 125°C		0.7		mV

6.6 Electrical Characteristics: 2.5-V Option

All other limits T_A = T_J = 25°C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1%, ±0.2%, and 0.5% respectively.

PARAMETER		TEST CONDITIONS		TYP⁽³⁾	MAX⁽⁴⁾	UNIT
V_R	Reverse breakdown voltage	I_R = 100 μA		2.500		V
		I_R = 100 μA	LM4050AIM3, LM4050AEM3		±2.5	mV
			LM4050BIM3, LM4050BEM3		±5
			LM4050CIM3, LM4050CEM3		±13
	Reverse breakdown voltage tolerance⁽⁵⁾	Industrial temperature range, T_A = T_J = T_MIN to T_MAX	LM4050AIM3, LM4050AEM3		±11	mV
			LM4050BIM3, LM4050BEM3		±24
			LM4050CIM3, LM4050CEM3		±21
		Extended temperature range, T_A = T_J = T_MIN to T_MAX	LM4050AIM3, LM4050AEM3		±15
			LM4050BIM3, LM4050BEM3		±18
			LM4050CIM3, LM4050CEM3		±25
I_RMIN	Minimum operating current	T_A = T_J = 25°C		41	60	μA
I_RMIN	Minimum operating current	T_A = T_J = T_MIN to T_MAX			65	μA
ΔV_R/ΔT	Average reverse breakdown voltage temperature coefficient⁽⁵⁾	I_R = 10 mA		±20		ppm/°C
		I_R = 1 mA		±15
		I_R = 100 μA, T_A = T_J = 25°C		±15
		I_R = 100 μA, T_A = T_J = T_MIN to T_MAX			±50
ΔV_R/ΔI_R	Reverse breakdown voltage change with operating current change⁽⁶⁾	I_RMIN ≤ I_R ≤ 1 mA, T_A = T_J = 25°C		0.3	0.8	mV
ΔV_R/ΔI_R		I_RMIN ≤ I_R ≤ 1 mA T_A = T_J = T_MIN to T_MAX			1.2	mV
ΔV_R/ΔI_R	Reverse breakdown voltage change with operating current change⁽⁶⁾	1 mA ≤ I_R ≤ 15 mA, T_A = T_J = 25°C		2.3	6	mV
ΔV_R/ΔI_R		1 mA ≤ I_R ≤ 15 mA, T_A = T_J = T_MIN to T_MAX			8	mV
Z_R	Reverse dynamic impedance	I_R = 1 mA, f = 120 Hz, I_AC = 0.1 I_R		0.3		Ω
e_N	Wideband noise	I_R = 100 μA, 10 Hz ≤ f ≤ 10 kHz		41		μV_rms
ΔV_R	Reverse breakdown voltage long term stability	t = 1000 hrs, T = 25°C ±0.1°C, I_R = 100 μA		120		ppm
V_HYST	Thermal hysteresis ⁽⁷⁾	ΔT = −40°C to 125°C		07		mV

6.7 Electrical Characteristics: 4.1-V Option

All other limits T_A = T_J = 25°C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1%, ±0.2%, and 0.5% respectively.

PARAMETER		TEST CONDITIONS		TYP⁽³⁾	MAX	UNIT
V_R	Reverse Breakdown Voltage	I_R = 100 μA		4.096		V
	Reverse Breakdown Voltage Tolerance⁽⁵⁾	I_R = 100 μA	LM4050AIM3, LM4050AEM3		±4.1	mV
			LM4050BIM3,LM4050BEM3		±8.2
			LM4050CIM3, LM4050CEM3		±21
		Industrial temperature range, T_A = T_J = T_MIN to T_MAX	LM4050AIM3, LM4050AEM3		±18
			LM4050BIM3,LM4050BEM3		±22
			LM4050CIM3, LM4050CEM3		±34
		Extended temperature range, T_A = T_J = T_MIN to T_MAX	LM4050AIM3, LM4050AEM3		±25
			LM4050BIM3,LM4050BEM3		±29
			LM4050CIM3, LM4050CEM3		±41
I_RMIN	Minimum Operating Current	T_A = T_J = 25°C		52	68	μA
		Industrial temperature range, T_A = T_J = T_MIN to T_MAX			73
		Extended temperature range, T_A = T_J = T_MIN to T_MAX			78
ΔV_R/ΔT	Average reverse breakdown voltage temperature coefficient⁽⁵⁾	I_R = 10 mA		±30		ppm/°C
		I_R = 1 mA		±20
		I_R = 100 μA, T_A = T_J = 25°C		±20
		I_R = 100 μA, T_A = T_J = T_MIN to T_MAX			±50
ΔV_R/ΔI_R	Reverse breakdown voltage change with operating current change⁽⁶⁾	I_RMIN ≤ I_R ≤ 1 mA, T_A = T_J = 25°C		0.2	0.9	mV
		I_RMIN ≤ I_R ≤ 1 mA, T_A = T_J = T_MIN to T_MAX			1.2
		1 mA ≤ I_R ≤ 15 mA, T_A = T_J = 25°C		2	7
		1 mA ≤ I_R ≤ 15 mA, T_A = T_J = T_MIN to T_MAX			10
Z_R	Reverse dynamic impedance	I_R = 1 mA, f = 120 Hz, I_AC = 0.1 I_R		0.5		Ω
e_N	Wideband noise	I_R = 100 μA, 10 Hz ≤ f ≤ 10 kHz		93		μV_rms
ΔV_R	Reverse breakdown voltage long term stability	t = 1000 hrs, T = 25°C ±0.1°C, I_R = 100 μA		120		ppm
V_HYST	Thermal hysteresis⁽⁷⁾	ΔT = −40°C to 125°C		1.148		mV

6.8 Electrical Characteristics: 5-V Option

All other limits T_A = T_J = 25°C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1%, ±0.2% and 0.5% respectively.

PARAMETER		TEST CONDITIONS		TYP⁽³⁾	MAX⁽⁴⁾	UNIT
V_R	Reverse Breakdown Voltage	I_R = 100 μA		5		V
	Reverse Breakdown Voltage Tolerance⁽⁵⁾	I_R = 100 μA	LM4050AIM3, LM4050AEM3		±5	mV
			LM4050BIM3. LM4050BEM3		±10
			LM4050CIM3, LM4050CEM3		±25
		Industrial Temp. Range T_A = T_J = T_MIN to T_MAX	LM4050AIM3, LM4050AEM3		±22
			LM4050BIM3, LM4050BEM3		±27
			LM4050CIM3, LM4050CEM3		±42
		Extended Temp. Range T_A = T_J = T_MIN to T_MAX	LM4050AIM3, LM4050AEM3		±30
			LM4050BIM3, LM4050BEM3		±35
			LM4050CIM3, LM4050CEM3		±50
I_RMIN	Minimum Operating Current	T_A = T_J = 25°C		56	74	μA
		Industrial Temp. Range T_A = T_J = T_MIN to T_MAX			80
		Extended Temp. Range T_A = T_J = T_MIN to T_MAX			90
ΔV_R/ΔT	Average Reverse Breakdown Voltage Temperature Coefficient⁽⁵⁾	I_R = 10 mA		±30		ppm/°C
		I_R = 1 mA		±20
		I_R = 100 μA, T_A = T_J = 25°C		±20
		I_R = 100 μA T_A = T_J = T_MIN to T_MAX			±50
ΔV_R/ΔI_R	Reverse Breakdown Voltage Change with Operating Current Change⁽⁶⁾	I_RMIN ≤ I_R ≤ 1 mA, T_A = T_J = 25°C		0.2	1	mV
		I_RMIN ≤ I_R ≤ 1 mA T_A = T_J = T_MIN to T_MAX			1.4
		1 mA ≤ I_R ≤ 15 mA, T_A = T_J = 25°C		2	8
		1 mA ≤ I_R ≤ 15 mA T_A = T_J = T_MIN to T_MAX			12
Z_R	Reverse Dynamic Impedance	I_R = 1 mA, f = 120 Hz		0.5		Ω
Z_R	Reverse Dynamic Impedance	I_AC = 0.1 I_R				Ω
e_N	Wideband Noise	I_R = 100 μA 10 Hz ≤ f ≤ 10 kHz		93		μV_rms
ΔV_R	Reverse Breakdown Voltage Long Term Stability	t = 1000 hrs T = 25°C ±0.1°C I_R = 100 μA		120		ppm
V_HYST	Thermal Hysteresis⁽⁷⁾	ΔT = –40°C to 125°C		1.4		mV

6.9 Electrical Characteristics: 8.2-V Option

All other limits T_A = T_J = 25°C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1% and ±0.2% and 0.5% respectively.

PARAMETER		TEST CONDITIONS		TYP⁽³⁾	MAX⁽⁴⁾	UNIT
V_R	Reverse Breakdown Voltage	I_R = 150 μA		8.192		V
	Reverse Breakdown Voltage Tolerance ⁽⁵⁾	I_R = 150 μA	LM4050AIM3, LM4050AEM3		±8.2	mV
			LM4050BIM3, LM4050BEM3		±16
			LM4050CIM3, LM4050CEM3		±41
		Industrial Temp. Range T_A = T_J = T_MIN to T_MAX	LM4050AIM3, LM4050AEM3		±35
			LM4050BIM3, LM4050BEM3		±43
			LM4050CIM3, LM4050CEM3		±68
		Extended Temp. Range T_A = T_J = T_MIN to T_MAX	LM4050AIM3, LM4050AEM3		±49
			LM4050BIM3, LM4050BEM3		±57
			LM4050CIM3, LM4050CEM3		±82
I_RMIN	Minimum Operating Current	T_A = T_J = 25°C		74	91	μA
		Industrial Temp. Range T_A = T_J = T_MIN to T_MAX			95
		Extended Temp. Range T_A = T_J = T_MIN to T_MAX			100
ΔV_R/ΔT	Average Reverse Breakdown Voltage Temperature Coefficient ⁽⁵⁾	I_R = 10 mA		±40		ppm/°C
		I_R = 1 mA		±20
		I_R = 150 μA, T_A = T_J = 25°C		±20
		I_R = 150 μA T_A = T_J = T_MIN to T_MAX			±50
ΔV_R/ΔI_R	Reverse Breakdown Voltage Change with Operating Current Change ⁽⁶⁾	I_RMIN ≤ I_R ≤ 1 mA, T_A = T_J = 25°C		0.6	1.3	mV
		I_RMIN ≤ I_R ≤ 1 mA T_A = T_J = T_MIN to T_MAX			2.5
		1 mA ≤ I_R ≤ 15 mA, T_A = T_J = 25°C		7	10
		1 mA ≤ I_R ≤ 15 mA T_A = T_J = T_MIN to T_MAX			18
Z_R	Reverse Dynamic Impedance	I_R = 1 mA, f = 120 Hz, I_AC = 0.1 I_R		0.6		Ω
e_N	Wideband Noise	I_R = 150 μA 10 Hz ≤ f ≤ 10 kHz		150		μV_rms
ΔV_R	Reverse Breakdown Voltage Long Term Stability	t = 1000 hrs T = 25°C ±0.1°C I_R = 150 μA		120		ppm
V_HYST	Thermal Hysteresis ⁽⁷⁾	ΔT = −40°C to 125°C		2.3		mV

6.10 Electrical Characteristics: 10-V Option

All other limits T_A = T_J = 25°C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1% and ±0.2% and 0.5% respectively.

PARAMETER		TEST CONDITIONS		TYP⁽³⁾	MAX⁽⁴⁾	UNIT
V_R	Reverse Breakdown Voltage	I_R = 150 μA		10		V
	Reverse Breakdown Voltage Tolerance ⁽⁵⁾	I_R = 150 μA	LM4050AIM3, LM4050AEM3		±10	mV (max)
			LM4050BIM3, LM4050BEM3		±20
			LM4050CIM3, LM4050CEM3		±50
		Industrial Temp. Range T_A = T_J = T_MIN to T_MAX	LM4050AIM3, LM4050AEM3		±43
			LM4050BIM3, LM4050BEM3		±53
			LM4050CIM3, LM4050CEM3		±83
		Extended Temp. Range T_A = T_J = T_MIN to T_MAX	LM4050AIM3, LM4050AEM3		±60
			LM4050BIM3, LM4050BEM3		±70
			LM4050CIM3, LM4050CEM3		±100
I_RMIN	Minimum Operating Current	T_A = T_J = 25°C		80	100	μA
		Industrial Temp. Range T_A = T_J = T_MIN to T_MAX			103
		Extended Temp. Range T_A = T_J = T_MIN to T_MAX			110
ΔV_R/ΔT	Average Reverse Breakdown Voltage Temperature Coefficient ⁽⁵⁾	I_R = 10 mA		±40		ppm/°C
		I_R = 1 mA		±20
		I_R = 150 μA, T_A = T_J = 25°C		±20
		I_R = 150 μA T_A = T_J = T_MIN to T_MAX			±50
ΔV_R/ΔI_R	Reverse Breakdown Voltage Change with Operating Current Change ⁽⁶⁾	I_RMIN ≤ I_R ≤ 1 mA, T_A = T_J = 25°C		0.8	1.5	mV
		I_RMIN ≤ I_R ≤ 1 mA T_A = T_J = T_MIN to T_MAX			3.5
		1 mA ≤ I_R ≤ 15 mA, T_A = T_J = 25°C		8	12
		1 mA ≤ I_R ≤ 15 mA T_A = T_J = T_MIN to T_MAX			23
Z_R	Reverse Dynamic Impedance	I_R = 1 mA, f = 120 Hz, I_AC = 0.1 I_R		0.7		Ω
e_N	Wideband Noise	I_R = 150 μA 10 Hz ≤ f ≤ 10 kHz		150		μV_rms
ΔV_R	Reverse Breakdown Voltage Long Term Stability	t = 1000 hrs T = 25°C ±0.1°C I_R = 150 μA		120		ppm
V_HYST	Thermal Hysteresis⁽⁷⁾	ΔT = −40°C to 125°C		2.8		mV

(1) The maximum power dissipation must be derated at elevated temperatures and is dictated by T_Jmax (maximum junction temperature), R_θJA (junction to ambient thermal resistance), and T_A (ambient temperature). The maximum allowable power dissipation at any temperature is PD_max = (T_Jmax − T_A)/R_θJA or the number given in the Absolute Maximum Ratings, whichever is lower. For the LM4050-N, T_Jmax = 150°C, and the typical thermal resistance (R_θJA), when board mounted, is 326°C/W for the SOT-23 package.

(2) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.

(3) Typicals are at T_J = 25°C and represent most likely parametric norm.

(4) Limits are 100% production tested at 25°C. Limits over temperature are guaranteed through correlation using Statistical Quality Control (SQC) methods. The limits are used to calculate National's AOQL.

(5) The overtemperature limit for Reverse Breakdown Voltage Tolerance is defined as the room temperature Reverse Breakdown Voltage Tolerance ±[(ΔV_R/ΔT)(maxΔT)(V_R)]. Where, ΔV_R/ΔT is the V_R temperature coefficient, maxΔT is the maximum difference in temperature from the reference point of 25°C to T_MIN or T_MAX, and V_R is the reverse breakdown voltage. The total overtemperature tolerance for the different grades in the industrial temperature range where maxΔT = 65°C is shown below: A-grade: ±0.425% = ±0.1% ±50 ppm/°C × 65°C B-grade: ±0.525% = ±0.2% ±50 ppm/°C × 65°C C-grade: ±0.825% = ±0.5% ±50 ppm/°C × 65°C. Therefore, as an example, the A-grade LM4050-N-2.5 has an overtemperature Reverse Breakdown Voltage tolerance of ±2.5V × 0.425% = ±11 mV.

(6) Load regulation is measured on pulse basis from no load to the specified load current. Output changes due to die temperature change must be taken into account separately.

(7) Thermal hysteresis is defined as the difference in voltage measured at 25°C after cycling to temperature –40°C and the 25°C measurement after cycling to temperature 125°C.