SNVS307G September 2004 – April 2016 LM5010
PRODUCTION DATA.
MIN | MAX | UNIT | |
---|---|---|---|
VIN | 8 | 75 | V |
VIN to GND | 76 | V | |
BST to GND | 90 | V | |
SW to GND (steady state) | –1.5 | V | |
BST to VCC | 76 | V | |
BST to SW | 14 | V | |
VCC to GND | 14 | V | |
SGND to RTN | –0.3 | 0.3 | V |
SS to RTN | –0.3 | 4 | V |
VIN to SW | 76 | V | |
All other inputs to GND | –0.3 | 7 | V |
Lead temperature (soldering, 4 s)(2) | 260 | °C | |
Junction temperature, TJ | –40 | 150 | °C |
Storage temperature, Tstg | –55 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±750 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIN | Input voltage | 8 | 75 | V |
IO | Output current | 1 | A | |
Ext-VCC | External bias voltage | 8 | 13 | V |
TJ | Operating junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | LM5010 | UNIT | ||
---|---|---|---|---|
DPR (WSON) | PWP (HTSSOP) | |||
10 PINS | 14 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 36 | 41.1 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 31.9 | 26.5 | °C/W |
RθJB | Junction-to-board thermal resistance | 13.2 | 22.5 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.3 | 0.7 | °C/W |
ψJB | Junction-to-board characterization parameter | 13.5 | 22.2 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 3 | 3.3 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VCC REGULATOR | ||||||
VCCReg | VCC regulated output | 6.6 | 7 | 7.4 | V | |
VIN - VCC | ICC = 0 mA, FS < 200 kHz, 7.5 V ≤ VIN ≤ 8 V |
1.3 | V | |||
VCC output impedance (0 mA ≤ ICC ≤ 5 mA) | VIN = 8 V | 140 | Ω | |||
VIN = 48 V | 2.5 | |||||
VCC current limit | VCC = 0 V | 10 | mA | |||
UVLOVCC | VCC undervoltage lockout threshold | VCC increasing | 5.8 | V | ||
UVLOVCC hysteresis | VCC decreasing | 145 | mV | |||
UVLOVCC filter delay | 100-mV overdrive | 3 | µs | |||
IIN operating current | Non-switching, FB = 3 V | 650 | 850 | µA | ||
IIN shutdown current | RON/SD = 0 V | 95 | 200 | µA | ||
SOFT-START PIN | ||||||
Pullup voltage | 2.5 | V | ||||
Internal current source | 11.5 | µA | ||||
CURRENT LIMIT | ||||||
ILIM | Threshold | Current out of ISEN | 1 | 1.25 | 1.5 | A |
Resistance from ISEN to SGND | 130 | mΩ | ||||
Response time | 150 | ns | ||||
RON/SD PIN | ||||||
Shutdown threshold | Voltage at RON/SD rising | 0.35 | 0.65 | 1.1 | V | |
Threshold hysteresis | Voltage at RON/SD falling | 40 | mV | |||
HIGH-SIDE FET | ||||||
RDS(ON) | Buck switch | ITEST = 200 mA | 0.35 | 0.8 | Ω | |
UVLOGD | Gate drive UVLO | VBST - VSW Increasing | 3 | 4.3 | 5 | V |
UVLOGD Hysteresis | 440 | mV | ||||
REGULATION AND OVERVOLTAGE COMPARATORS (FB PIN) | ||||||
VREF | FB regulation threshold | SS pin = steady state | 2.45 | 2.5 | 2.55 | V |
FB overvoltage threshold | 2.9 | V | ||||
FB bias current | 1 | nA | ||||
THERMAL SHUTDOWN | ||||||
TSD | Thermal shutdown temperature | 175 | °C | |||
Thermal shutdown hysteresis | 20 | °C |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
RDS(ON) | Buck switch | ITEST = 200 mA | 0.35 | 0.8 | Ω | |
UVLOGD | Gate drive UVLO | VBST - VSW Increasing | 3 | 4.3 | 5 | V |
UVLOGD Hysteresis | 440 | mV | ||||
OFF TIMER | ||||||
tOFF | Minimum OFF-time | 265 | ns | |||
ON TIMER | ||||||
tON - 1 | ON-time | VIN = 10 V, RON = 200 kΩ | 2.1 | 2.75 | 3.4 | µs |
tON - 2 | ON-time | VIN = 75 V, RON = 200 kΩ | 290 | 390 | 490 | ns |