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ZHCSNW4 October 2022 LM5012-Q1

PRODUCTION DATA

7.5 Electrical Characteristics

T_J = –40°C to +150°C, V_IN = 24 V. Typical values are at T_J = 25°C and V_EN/UVLO = 2 V (unless otherwise noted).

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENT
I_Q-SHUTDOWN	VIN shutdown current	V_EN/UVLO = 0V		3.1	9.9	µA
I_Q-SLEEP	VIN sleep current	V_EN = 2.5 V, V_FB = 1.5 V, V_BST –V_SW = 5 V, non-switching		10	20	µA
I_Q-STANDBY	VIN standby current	V_EN = 1.2 V		25	40	µA
I_Q-ACTIVE	VIN Active current	V_EN = 2.5 V		450		µA
EN/UVLO
V_SD-RISING	Shutdown threshold				1.1	V
V_SD-FALLING	Shutdown threshold		0.45			V
V_EN-RISING	EN threshold rising		1.43	1.5	1.6	V
V_EN-FALLING	EN threshold falling		1.35	1.4	1.47	V
FEEDBACK VOLTAGE
V_REF	FB regulation voltage		1.181	1.2	1.218	V
TIMING
t_ON1	On-time1	V_VIN = 12 V, R_RON = 75 kΩ		2550		ns
t_ON2	On-time2	V_VIN = 12 V, R_RON = 25 kΩ		830		ns
t_ON3	On-time3	V_VIN = 48 V, R_RON = 75 kΩ		625		ns
t_ON4	On-time4	V_VIN = 48 V, R_RON = 25 kΩ		245		ns
t_ON5	On-time5	V_VIN = 100 V, R_RON = 75 kΩ		330		ns
t_ON6	On-time6	V_VIN = 100 V, R_RON = 25 kΩ		128		ns
PGOOD
V_PG-UTH	FB upper threshold for PGOOD low to high	V_FB rising	1.1	1.14	1.2	V
V_PG-LTH	FB lower threshold for PGOOD high to low	V_FB falling	1.05	1.08	1.12	V
V_PG-HYS	PGOOD upper and lower threshold hysteresis	V_FB falling		60		mV
R_PG	PGOOD pulldown resistance	V_FB = 1 V		8		Ω
BOOTSTRAP
V_BST-UV	Gate drive UVLO	V_BST falling		2.4	3.4	V
POWER SWITCH
R_DSON-HS	High-side MOSFET R_DSON	I_SW = –100 mA		0.25		Ω
SOFT START
t_SS	Internal soft-start		1.75	3.5	4.75	ms
CURRENT LIMIT
I_PEAK	Peak current limit threshold		2.8	3.2	3.6	A
THERMAL SHUTDOWN
T_J-SD	Thermal shutdown threshold ⁽¹⁾	Temperature rising		175		°C
T_J-HYS	Thermal shutdown hysteresis ⁽¹⁾			10		°C

(1) Specified by design. Not product tested.