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ZHCSCT1A April 2014 – August 2014 LM5066I

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

PWP|28
- MPDS373B

散热焊盘机械数据 (封装 | 引脚)

PWP|28
- PPTD290A

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8 Specifications

8.1 Handling Ratings

			MIN	MAX	UNIT
T_stg	Storage temperature		–65	150	°C
V_ESD⁽¹⁾	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins except GATE⁽²⁾	–2	2	kV
V_ESD⁽¹⁾	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽³⁾	–500	500	V

(1) The human body model is a 100-pF capacitor discharged through a 1.5-kΩ resistor into each pin. 2-kV rating for all pins except GATE which is rated for 1 kV.

(2) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(3) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.2 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
VIN, SENSE, OUT voltage		10		80	V
Junction temperature		–40		125	°C

8.3 Thermal Information

THERMAL METRIC⁽¹⁾		LM5066I	UNIT
		PWP
		28 PINS
R_θJA	Junction-to-ambient thermal resistance⁽²⁾	35.6	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance⁽³⁾	19.9
R_θJB	Junction-to-board thermal resistance⁽⁴⁾	16.8
ψ_JT	Junction-to-top characterization parameter⁽⁵⁾	0.5
ψ_JB	Junction-to-board characterization parameter⁽⁶⁾	16.7
R_θJC(bot)	Junction-to-case (bottom) thermal resistance⁽⁷⁾	2.9

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a.

(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.

(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8.

(5) The junction-to-top characterization parameter, ψ_JT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θ_JA, using a procedure described in JESD51-2a (sections 6 and 7).

(6) The junction-to-board characterization parameter, ψ_JB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θ_JA, using a procedure described in JESD51-2a (sections 6 and 7).

(7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.

8.4 Electrical Characteristics

Unless otherwise stated, the following conditions apply: V_VIN= 48 V, –40°C < T_J < 125°C, V_UVLO = 3 V , V_OVLO = 0 V, R_PWR= 20 kΩ. See ⁽¹⁾.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
INPUT (VIN PIN)
I_IN-EN	Input current, enabled	V_UVLO = 3 V and V_OVLO = 2 V		5.6	7	mA
POR_IT	Power-on reset threshold at V_VIN to trigger insertion timer	V_VIN increasing		7.8	9.0	V
POR_EN	Power-on reset threshold at V_VIN to enable all functions	V_VIN increasing		8.6	9.9	V
POR_HYS	POR_EN hysteresis	V_VIN decreasing		100		mV
VDD REGULATOR (VDD PIN)
V_DD		I_VDD = 0 mA	4.60	4.90	5.15	V
V_DD		I_VDD = 10 mA	4.60	4.85	5.15	V
V_DDILIM	V_VDD current limit		–50	–30	–15	mA
V_DDPOR	V_VDD voltage reset threshold	V_VDD rising		4.1		V
UVLO/EN, OVLO PINS
UVLO_TH	UVLO threshold	V_UVLO falling	2.41	2.48	2.55	V
UVLO_HYS	UVLO hysteresis current	V_UVLO = 1 V	16	20	24	µA
UVLO_BIAS	UVLO bias current	V_UVLO = 3 V			1	µA
OVLO_TH	OVLO threshold	V_OVLO rising	2.39	2.46	2.53	V
OVLO_HYS	OVLO hysteresis current	V_OVLO= 1 V	–24	–21	–16	µA
OVLO_BIAS	OVLO bias current	V_OVLO = 1 V			1	µA
POWER GOOD (PGD PIN)
PGD_VOL	Output low voltage	I_SINK = 2 mA		100	400	mV
PGD_IOH	Off leakage current	V_PGD= 80 V			1	µA
FB PIN
FB_TH	FB threshold	V_UVLO = 3 V and V_OVLO = 2 V	2.41	2.46	2.52	V
FB_HYS	FB hysteresis current		–25	–20	–15	µA
FB_LEAK	Off leakage current	V_FB = 2.3 V			1	µA
POWER LIMIT (PWR PIN)
	Power limit sense voltage (V_{VIN_K} – V_SENSE)	V_SENSE – V_OUT = 48 V, R_PWR = 60 kΩ	7.4	9.4	11.4	mV
		V_SENSE – V_OUT = 48 V, R_PWR = 20 kΩ	1.5	3.5	5.7	mV
		V_SENSE – V_OUT = 48 V, R_PWR = 20 kΩ, T_J = 0°C to 85°C	1.85	3.5	5.02	mV
		V_SENSE – V_OUT = 24 V, R_PWR = 60 kΩ	15	18.75	22.5	mV
		V_SENSE – V_OUT = 24 V, R_PWR = 20 kΩ	5	7.23	10	mV
I_PWR	PWR pin current	V_PWR = 2.5 V		-20		µA
R_SAT(PWR)	PWR pin impedance when disabled	V_UVLO = 2 V		120		Ω
GATE CONTROL (GATE PIN)
I_GATE	Source current	Normal operation	–40	–20	–7.5	µA
	Fault sink current	V_UVLO = 2 V	3.4	4.2	5.3	mA
	POR circuit breaker sink current	V_{VIN_K} – V_SENSE = 60 mV or V_VIN < POR_IT, V_GATE = 5 V, OUT = 0 V, CB/CL ratio bit = 0, CL = 1	90	160	230	mA
V_GATEZ	Reverse-bias voltage of GATE to OUT Zener diode, I_Z = –100 µA	V_GATE– V_OUT	15	16.5	18	V
V_GATECP	Peak charge pump voltage in normal operation (V_IN = V_OUT)	V_GATE– V_OUT	11	13	15	V
OUT PIN
I_OUT-EN	OUT bias current, enabled	V_IN = V_OUT, normal operation	60	80	100	µA
I_OUT-DIS	OUT bias current, disabled ⁽²⁾	Disabled, OUT = 0 V, V_{VIN_K} = V_SENSE	–65	–50	–35	µA
CURRENT LIMIT
V_CL	Current limit threshold voltage (V_{VIN_K} – V_SENSE)	CL = VDD	23.4	26	28.6	mV
V_CL	Current limit threshold voltage (V_{VIN_K} – V_SENSE)	CL = GND	45	50	55	mV
I_SENSE	SENSE input current	Enabled, SENSE = OUT	20	25	35	µA
		Disabled, OUT = 0 V		66
		Enabled, OUT = 0 V	190	220	250
CIRCUIT BREAKER
RT_CB	Circuit breaker to current limit ratio: (V_{VIN_K} – V_SENSE)_CB/V_CL	CB/CL ratio bit = 0, ILIM = 50 mV	1.64	1.94	2.23	V/V
		CB/CL ratio bit = 1, ILIM = 50 mV	3.28	3.87	4.45
		CB/CL ratio bit = 0, ILIM = 26 mV	1.5	1.88	2.3
		CB/CL ratio bit = 1, ILIM = 26 mV	3.1	3.75	4.45
V_CB	Circuit breaker threshold voltage: (V_{VIN_K} – V_SENSE)	CB/CL ratio bit = 0, ILIM = 50 mV	76	96	116	mV
		CB/CL ratio bit = 1, ILIM = 50 mV	155	193	235
		CB/CL ratio bit = 0, ILIM = 26 mV	38	48	58
		CB/CL ratio bit = 1, ILIM = 26 mV	76	96	116
TIMER (TIMER PIN)
V_TMRH	Upper threshold		3.74	3.9	4.07	V
V_TMRL	Lower threshold	Restart cycles	1	1.2	1.4	V
V_TMRL	Lower threshold	End of eighth cycle re-enable threshold		0.3		V
I_TIMER	Insertion time current	TIMER pin = 2 V	–5.9	–4.8	–3.3	µA
	Sink current, end of insertion time		0.9	1.5	2.1	mA
	Fault detection current		–90	–75	–60	µA
	Fault sink current		1.7	2.5	3.2	µA
DC_FAULT	Fault restart duty cycle			0.5%
INTERNAL REFERENCE
V_REF	Reference voltage		2.93	2.97	3.02	V
ADC AND MUX
	Resolution			12		Bits
INL	Integral non-linearity	ADC only		±4		LSB
t_ACQUIRE	Acquisition + conversion time	Any channel		100		µs
t_RR	Acquisition round robin time	Cycle all channels		1		ms
TELEMETRY ACCURACY
I_INFSR	Current input full-scale range	CL = GND	50	54.4	58	mV
I_INFSR	Current input full-scale range	CL = VDD	26	27.0	29	mV
I_INLSB	Current input LSB	CL = GND		13.30		µV
I_INLSB	Current input LSB	CL = VDD		6.70		µV
V_AUXFSR	VAUX input full-scale range		2.93	2.97	3.01	V
V_AUXLSB	VAUX input LSB			725		µV
V_INFSR	Input voltage full-scale range		86	88.9	91	V
V_INLSB	Input voltage LSB			21.7		mV
V_OUTFSR	Output voltage full-scale range		86	88.9	91	V
V_OUTLSB	Output voltage LSB			21.7		mV
I_INACC	Input current absolute accuracy	V_{VIN_K} – V_SENSE = 22 mV (80% I_INFSR), CL = VDD	–1.75	%	+1.75
		V_{VIN_K} – V_SENSE = 5 mV (19% I_INFSR), CL = VDD	–6.0	%	+6.0
		V_{VIN_K} – V_SENSE = 44 mV (80% I_INFSR), CL = GND	–3.5	%	+3.5
V_ACC	VIN, VOUT absolute accuracy	V_VIN, V_VOUT = 48, 80 V	–1.25	%	+1.25
	VIN, VOUT absolute accuracy	V_VIN, V_VOUT = 10 V	–2.5	%	+2.5
	VAUX absolute accuracy	V_AUX = 2.8 V	–1.25	%	+1.25
P_INACC	Input power accuracy	V_VIN = 48 V, V_{VIN_K} – V_SENSE = 22 mV (80% I_INFSR), CL = VDD	–2.5	%	+2.5
		V_VIN = 48 V, V_{VIN_K} – V_SENSE = 5 mV (19% I_INFSR), CL = VDD	–6.5	%	+6.5
		V_VIN = 48V , V_{VIN_K} – V_SENSE= 44 mV (80% I_INFSR), CL = GND	–4.5	%	+4.5
REMOTE DIODE TEMPERATURE SENSOR
T_ACC	Temperature accuracy using local diode	T_A = 25°C to 85°C		2	10	°C
T_ACC	Remote diode resolution			9		bits
I_DIODE	External diode current source	High level		250	325	µA
I_DIODE	External diode current source	Low level		9.4		µA
	Diode current ratio			25.9		µA
PMBus PIN THRESHOLDS (SMBA, SDA, SCL)
V_IL	Data, clock input low voltage				0.9	V
V_IH	Data, clock input high voltage		2.1		5.5	V
V_OL	Data output low voltage	I_SINK = 3 mA	0		0.4	V
I_LEAK	Input leakage current	SDAI,SMBA,SCL = 5 V			1	µA
CONFIGURATION PIN THRESHOLDS (CL, RETRY)
V_IH	Threshold voltage		3			V
I_LEAK	Input leakage current	CL, RETRY = 5 V		5		µA

(1) Current out of a pin is indicated as a negative value.

(2) OUT bias current (disabled) due to leakage current through an internal 1-MΩ resistance from SENSE to VOUT.

8.5 SMBus Communications Timing Requirements and Definitions

PARAMETER		MIN	MAX	UNIT
ƒ_SMB	SMBus operating frequency	10	400	kHz
t_BUF	Bus free time between stop and start condition	1.3		µs
t_HD:STA	Hold time after (repeated) start condition. After this period, the first clock is generated.	0.6		µs
t_SU:STA	Repeated start condition setup time	0.6		µs
t_SU:STO	Stop condition setup time	0.6		µs
t_HD:DAT	Data hold time	85		ns
t_SU:DAT	Data setup time	100		ns
t_TIMEOUT	Clock low time-out⁽¹⁾	25	35	ms
t_LOW	Clock low period	1.5		µs
t_HIGH	Clock high period⁽²⁾	0.6		µs
t_LOW:SEXT	Cumulative clock low extend time (slave device)⁽³⁾		25	ms
t_LOW:MEXT	Cumulative low extend time (master device)⁽⁴⁾		10	ms
t_F	Clock or data fall time⁽⁵⁾	20	300	ns
t_R	Clock or data rise time⁽⁵⁾	20	300	ns

(1) Devices participating in a transfer will timeout when any clock low exceeds the value of t_TIMEOUT,MIN of 25 ms. Devices that have detected a timeout condition must reset the communication no later than t_TIMEOUT,MAX of 35 ms. The maximum value must be adhered to by both a master and a slave as it incorporates the cumulative stretch limit for both a master (10 ms) and a slave (25 ms).

(2) t_{HIGH MAX} provides a simple method for devices to detect bus idle conditions.

(3) t_LOW:SEXT is the cumulative time a slave device is allowed to extend the clock cycles in one message from the initial start to the stop. If a slave exceeds this time, it is expected to release both its clock and data lines and reset itself.

(4) t_LOW:MEXT is the cumulative time a master device is allowed to extend its clock cycles within each byte of a message as defined from start-to-ack, ack-to-ack, or ack-to-stop.

(5) Rise and fall time is defined as follows: t_R = ( V_ILMAX – 0.15) to (V_IHMIN + 0.15); t_F = 0.9 VDD to (V_ILMAX – 0.15)

Figure 1. SMBus Timing Diagram

8.6 Switching Characteristics

Unless otherwise stated, the following conditions apply: V_VIN= 48 V, –40°C < T_J < 125°C, V_UVLO = 3 V , V_OVLO = 0 V, R_PWR= 20 kΩ.

PARAMETER		CONDITIONS	MIN	TYP	MAX	UNIT
UVLO/EN, OVLO PINS
UVLO_DEL	UVLO delay	Delay to GATE high	7	9.6	12.2	µs
UVLO_DEL	UVLO delay	Delay to GATE low	6	8.5	11	µs
OVLO_DEL	OVLO delay	Delay to GATE high	7	9.6	12.2	µs
OVLO_DEL	OVLO delay	Delay to GATE low	6	8.5	11	µs
FB PIN
FB_DEL	FB Delay	Delay to PGD high	5	7.6	10	µs
FB_DEL	FB Delay	Delay to PGD low	7	9.2	12.5	µs
CURRENT LIMIT
t_CL	Response time	VIN-SENSE stepped from 0 to 80 mV; CL = GND		30	50	µs
CIRCUIT BREAKER
t_CB	Response time	VIN-SENSE stepped from 0 to 150 mV, time to GATE low, no load		0.36	0.8	µs
TIMER (TIMER PIN)
t_{FAULT_DELAY}	Fault to GATE low delay	TIMER pin reaches the upper threshold		12		µs

8.7 Typical Characteristics

Unless otherwise specified, the following conditions apply: T_J = 25°C, V_IN = 48 V. All graphs show junction temperature.

Figure 2. Input Current vs VIN and T_J

Figure 4. Gate Sourcing Current vs T_J

POR event or CB triggered

Figure 6. Gate Sinking Current vs T_J

Inject 100 µA into gate node. Measure GATE-SOURCE

Figure 8. Gate Clamping Voltage vs T_J

Figure 10. OVLO Threshold vs T_J

Figure 12. Current Limit Threshold vs T_J

	Device Enabled

Figure 3. Sense Current vs VOUT and T_J

Figure 5. Gate Sinking Current vs T_J

Figure 7. Gate Voltage vs T_J

Figure 9. UVLO/EN Threshold vs T_J

Figure 11. Power Good Feedback Threshold vs T_J