SNVS412C April   2006  – September 2016 LM5109A

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Performance Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Start-Up and UVLO
      2. 7.3.2 Level Shift
      3. 7.3.3 Output Stages
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 HS Transient Voltages Below Ground
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Select Bootstrap and VDD Capacitor
        2. 8.2.2.2 Select External Bootstrap Diode and Its Series Resistor
        3. 8.2.2.3 Selecting External Gate Driver Resistor
        4. 8.2.2.4 Estimate the Driver Power Loss
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resource
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings

See (1)(2)
MIN MAX UNIT
VDD to VSS –0.3 18 V
HB to HS −0.3 18 V
LI or HI to VSS −0.3 VDD + 0.3 V
LO to VSS −0.3 VDD + 0.3 V
HO to VSS VHS − 0.3 VHB + 0.3 V
HS to VSS(3) −5 90 V
HB to VSS 108 V
Junction Temperature –40 150 °C
Storage Temperature Range −55 150 °C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of the device is specified. Operating Ratings do not imply performance limits. For performance limits and associated test conditions, see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications.
(3) In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally not exceed –1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than VDD – 15V. For example, if VDD = 10V, the negative transients at HS must not exceed –5V.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM) (1) ±1500 V
(1) The human body model is a 100 pF capacitor discharged through a 1.5kΩ resistor into each pin.

6.3 Recommended Operating Conditions

MIN NOM MAX UNIT
VDD 8 14 V
HS(1) −1 90 V
HB VHS + 8 VHS + 14 V
HS Slew Rate < 50 V/ns
Junction Temperature −40 125 °C
(1) In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally not exceed –1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than VDD – 15V. For example, if VDD = 10V, the negative transients at HS must not exceed –5V.

6.4 Thermal Information

THERMAL METRIC(1) LM5109A UNIT
D (SOIC) NGT (WSON)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 117.6 42.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 64.9 34 °C/W
RθJB Junction-to-board thermal resistance 58.1 19.3 °C/W
ψJT Junction-to-top characterization parameter 17.4 0.4 °C/W
ψJB Junction-to-board characterization parameter 57.6 19.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance – 8.1 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

Unless otherwise specified, VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO(1). Typical limits are for TJ = 25°C, and minimum and maximum limits apply over the operating junction temperature range (–40°C to 125°C).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENTS
IDD VDD quiescent current LI = HI = 0V 0.3 0.6 mA
IDDO VDD operating current f = 500 kHz 1.8 2.9 mA
IHB Total HB quiescent current LI = HI = 0V 0.06 0.2 mA
IHBO Total HB operating current f = 500 kHz 1.4 2.8 mA
IHBS HB to VSS current, quiescent VHS = VHB = 90V 0.1 10 µA
IHBSO HB to VSS current, operating f = 500 kHz 0.5 mA
INPUT PINS LI and HI
VIL Low-level input voltage threshold 0.8 1.8 V
VIH High-level input voltage threshold 1.8 2.2 V
RI Input pulldown resistance 100 200 500 kΩ
UNDER-VOLTAGE PROTECTION
VDDR VDD rising threshold VDDR = VDD – VSS 6.0 6.7 7.4 V
VDDH VDD threshold hysteresis 0.5 V
VHBR HB rising threshold VHBR = VHB – VHS 5.7 6.6 7.1 V
VHBH HB threshold hysteresis 0.4 V
LO GATE DRIVER
VOLL Low-level output voltage ILO = 100 mA, VOHL = VLO – VSS 0.38 0.65 V
VOHL High-level output voltage ILO = −100 mA, VOHL = VDD – VLO 0.72 1.20 V
IOHL Peak pullup current VLO = 0V 1.0 A
IOLL Peak pulldown current VLO = 12V 1.0 A
HO GATE DRIVER
VOLH Low-level output voltage IHO = 100 mA, VOLH = VHO – VHS 0.38 0.65 V
VOHH High-level output voltage IHO = −100 mA, VOHH = VHB – VHO 0.72 1.20 V
IOHH Peak pullup current VHO = 0V 1.0 A
IOLH Peak pulldown current VHO = 12V 1.0 A
(1) Minimum and maximum limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).

6.6 Switching Characteristics

Unless otherwise specified, VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO. Typical limits are for TJ = 25°C, and minimum and maximum limits apply over the operating junction temperature range (–40°C to 125°C).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tLPHL Lower turn-off propagation delay
(LI falling to LO falling)		 30 56 ns
tHPHL Upper turn-off propagation delay
(HI falling to HO falling)		 30 56 ns
tLPLH Lower turn-on propagation delay
(LI rising to LO rising)		 32 56 ns
tHPLH Upper turn-on propagation delay
(HI rising to HO rising)		 32 56 ns
tMON Delay matching: lower turn-on and upper turn-off 2 15 ns
tMOFF Delay matching: lower turn-off and upper turn-on 2 15 ns
tRC, tFC Either output rise or fall time CL = 1000 pF 15 - ns
tPW Minimum input pulse width that changes the output 50 ns
LM5109A 20170218.gif Figure 1. Timing Diagram

6.7 Typical Performance Characteristics

LM5109A 20170204.gif
Figure 2. VDD Operating Current vs Frequency
LM5109A 20170206.gif
Figure 4. Operating Current vs Temperature
LM5109A 20170208.gif
Figure 6. Quiescent Current vs Voltage
LM5109A 20170210.gif
Figure 8. LO and HO High Level Output Voltage vs Temperature
LM5109A 20170214.gif
Figure 10. Undervoltage Rising Thresholds vs Temperature
LM5109A 20170216.gif
Figure 12. Input Thresholds vs Temperature
LM5109A 20211905.gif
VDD = VHB = 12 V VSS = VHS = 0 V
Figure 3. HB Operating Current vs Frequency
LM5109A 20170207.gif
Figure 5. Quiescent Current vs Temperature
LM5109A 20170209.gif
Figure 7. Propagation Delay vs Temperature
LM5109A 20170211.gif
Figure 9. LO and HO Low Level Output Voltage vs Temperature
LM5109A 20170215.gif
Figure 11. Undervoltage Hysteresis vs Temperature
LM5109A 20170217.gif
Figure 13. Input Thresholds vs Supply Voltage
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