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SNVS255B May 2004 – September 2016 LM5110

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

D|8
- MSOI002K
DPR|10
- MPSS046B

散热焊盘机械数据 (封装 | 引脚)

订购信息

snvs255b_pm

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾⁽²⁾

	MIN	MAX	UNIT
V_CC to V_EE	−0.3	15	V
V_CC to IN_REF	−0.3	15	V
IN to IN_REF, nSHDN to IN_REF	−0.3	15	V
IN_REF to V_EE	−0.3	5	V
Maximum junction temperature, (T_J(max))		150	°C
Operating junction temperature		125	°C
Storage temperature, (T_stg)	–55	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

	MIN	NOM	MAX	UNIT
V_CC to V_EE	3.5	-	14	V
V_CC to IN_REF	3.5	-	14	V
IN_REF to V_EE	0		4	V
Junction Temperature	-40		126	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		LM5110		UNIT
		D (SOIC)	DPR (WSON)
		8 PINS	10 PINS
R_θJA	Junction-to-ambient thermal resistance	114	40.1	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	56.6	40.4	°C/W
R_θJB	Junction-to-board thermal resistance	55.2	17.3	°C/W
ψ_JT	Junction-to-top characterization parameter	10.3	0.5	°C/W
ψ_JB	Junction-to-board characterization parameter	54.6	17.5	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	-	6.3	°C/W

(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

T_J = −40°C to +125°C, V_CC = 12V, V_EE = IN_REF = 0V, nSHDN = V_CC, No Load on OUT_A or OUT_B, unless otherwise specified.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
	V_CCOperating Range	V_CC−IN_REF and V_CC−V_EE	3.5		14	V
V_CCR	V_CC Under Voltage Lockout (rising)	V_CC−IN_REF	2.3	2.9	3.5	V
V_CCH	V_CC Under Voltage Lockout Hysteresis			230		mV
I_CC	V_CCSupply Current (I_CC)	IN_A = IN_B = 0 V (5110-1)		1	2	mA
		IN_A = IN_B = V_CC (5110-2)		1	2
		IN_A = V_CC, IN_B = 0 V (5110-3)		1	2
I_CCSD	V_CCShutdown Current (I_CC)	nSHDN = 0 V		18	25	µA
CONTROL INPUTS
V_IH	Logic High		2.2			V
V_IL	Logic Low				0.8	V
HYS	Input Hysteresis			400		mV
I_IL	Input Current Low	IN_A=IN_B=V_CC (5110-1-2-3)	−1	0.1	1	µA
I_IH	Input Current High	IN_A=IN_B=V_CC (5110-1)	10	18	25
		IN_A=IN_B=V_CC (5110-2)	−1	0.1	1
		IN_A=V_CC (5110-3)	–1	0.1	1
		IN_B=V_CC (5110-3)	10	18	25
SHUTDOWN INPUT
ISD	Pullup Current	nSHDN = 0 V		−18	−25	µA
VSDR	Shutdown Threshold	nSHDN rising	0.8	1.5	2.2	V
VSDH	Shutdown Hysteresis			165		mV
OUTPUT DRIVERS
R_OH	Output Resistance High	I_OUT = −10 mA ⁽¹⁾		30	50	Ω
R_OL	Output Resistance Low	I_OUT = + 10 mA ⁽¹⁾		1.4	2.5	Ω
I_Source	Peak Source Current	OUTA/OUTB = V_CC/2, 200 ns Pulsed Current		3		A
I_Sink	Peak Sink Current	OUTA/OUTB = V_CC/2, 200 ns Pulsed Current		5		A
LATCHUP PROTECTION
	AEC - Q100, Method 004	T_J = 150°C		500		mA

(1) The output resistance specification applies to the MOS device only. The total output current capability is the sum of the MOS and Bipolar devices.

7.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	TYP	MAX	UNIT
td1	Propagation Delay Time Low to High, IN rising (IN to OUT)	C_LOAD = 2 nF, see Figure 2	25	40	ns
td2	Propagation Delay Time High to Low, IN falling (IN to OUT)	C_LOAD = 2 nF, see Figure 2	25	40	ns
t_r	Rise Time	C_LOAD = 2 nF, see Figure 2	14	25	ns
t_f	Fall Time	C_LOAD = 2 nF, see Figure 2	12	25	ns