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SNVS300H July 2004 – September 2016 LM5111

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

D|8
- MSOI002K
DGN|8
- MPDS046G

散热焊盘机械数据 (封装 | 引脚)

DGN|8
- PPTD274A

订购信息

7 Specifications

7.1 Absolute Maximum Ratings

see ⁽¹⁾⁽²⁾

	MIN	MAX	UNIT
VCC to VEE	−0.3	15	V
IN to VEE	−0.3	15	V
Maximum junction temperature, T_J(max)		150	°C
Storage temperature, T_stg	−55	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	2000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
T_J	Operating junction temperature			125	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		LM5111		UNIT
		D (SOIC)	DGN (MSOP-PowerPAD)
		8 PINS	8 PINS
R_θJA	Junction-to-ambient thermal resistance	112.2	50.7	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	54.6	56.6	°C/W
R_θJB	Junction-to-board thermal resistance	53.1	35.9	°C/W
ψ_JT	Junction-to-top characterization parameter	9.4	5.3	°C/W
ψ_JB	Junction-to-board characterization parameter	52.5	35.6	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	N/A	4.4	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

T_J = −40°C to +125°C, V_CC = 12 V, V_EE = 0 V, No Load on OUT_A or OUT_B, unless otherwise specified.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
	V_CCoperating range	V_CC−V_EE	3.5		14	V
V_CCR	V_CC undervoltage lockout (rising)	V_CC−V_EE	2.3	2.9	3.5	V
V_CCH	V_CC undervoltage lockout hysteresis			230		mV
I_CC	V_CCsupply current (I_CC)	IN_A = IN_B = 0 V (5111-1)		1	2	mA
		IN_A = IN_B = V_CC (5111-2)		1	2
		IN_A = V_CC, IN_B = 0 V (5111-3)		1	2
CONTROL INPUTS
V_IH	Logic high		2.2			V
V_IL	Logic low				0.8	V
V_thH	High threshold		1.3	1.75	2.2	V
V_thL	Low threshold		0.8	1.35	2	V
HYS	Input hysteresis			400		mV
I_IL	Input current low	IN_A=IN_B=V_CC (5111-1-2-3)	–1	0.1	1	µA
I_IH	Input current high	IN_B=V_CC (5111-3)	10	18	25
		IN_A=IN_B=V_CC (5111-2)	–1	0.1	1
		IN_A=IN_B=V_CC (5111-1)	10	18	25
		IN_A=V_CC (5111-3)	–1	0.1	1
OUTPUT DRIVERS
R_OH	Output resistance high	I_OUT = −10 mA⁽¹⁾		30	50	Ω
R_OL	Output resistance low	I_OUT = + 10 mA⁽¹⁾		1.4	2.5	Ω
I_Source	Peak source current	OUTA/OUTB = V_CC/2, 200-ns Pulsed Current		3		A
I_Sink	Peak sink current	OUTA/OUTB = V_CC/2, 200-ns Pulsed Current		5		A
LATCHUP PROTECTION
	AEC - Q100, method 004	T_J = 150°C		500		mA
THERMAL RESISTANCE
θ_JA	Junction to ambient, 0 LFPM air flow	SOIC Package		170		°C/W
θ_JA	Junction to ambient, 0 LFPM air flow	MSOP-PowerPAD Package		60		°C/W
θ_JC	Junction to case	SOIC Package		70		°C/W
θ_JC	Junction to case	MSOP-PowerPAD Package		4.7		°C/W

(1) The output resistance specification applies to the MOS device only. The total output current capability is the sum of the MOS and Bipolar devices.

7.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	TYP	MAX	UNIT
td1	Propagation delay time low to high, IN rising (IN to OUT)	C_LOAD = 2 nF⁽¹⁾	25	40	ns
td2	Propagation delay time high to low, IN falling (IN to OUT)	C_LOAD = 2 nF⁽¹⁾	25	40	ns
t_r	Rise time	C_LOAD = 2 nF⁽¹⁾	14	25	ns
t_f	Fall time	C_LOAD = 2 nF⁽¹⁾	12	25	ns