ZHCSG45B March   2017  – March 2018 LM5113-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化应用示意图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input and Output
      2. 7.3.2 Start-Up and UVLO
      3. 7.3.3 HS Negative Voltage and Bootstrap Supply Voltage Clamping
      4. 7.3.4 Level Shift
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VDD Bypass Capacitor
        2. 8.2.2.2 Bootstrap Capacitor
        3. 8.2.2.3 Power Dissipation
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Pin Configuration and Functions

DPR Package
10-Pin WSON With Exposed Thermal Pad
Top View
LM5113-Q1 30162901.gif

Pin Functions

PIN TYPE (1) DESCRIPTION
NO. NAME
1 VDD P 5-V positive gate drive supply: locally decouple to VSS using low-ESR/ESL capacitor located as close as possible to the IC.
2 HB P High-side gate driver bootstrap rail: connect the positive terminal of the bootstrap capacitor to HB and the negative terminal to HS. The bootstrap capacitor must be placed as close to the IC as possible.
3 HOH O High-side gate driver turnon output: connect to the gate of high-side GaN FET with a short, low inductance path. A gate resistor can be used to adjust the turnon speed.
4 HOL O High-side gate driver turnoff output: connect to the gate of high-side GaN FET with a short, low inductance path. A gate resistor can be used to adjust the turnoff speed.
5 HS P High-side GaN FET source connection: connect to the bootstrap capacitor negative terminal and the source of the high-side GaN FET.
6 HI I High-side driver control input. The LM5113-Q1 inputs have TTL type thresholds. Unused inputs must be tied to ground and not left open.
7 LI I Low-side driver control input. The LM5113-Q1 inputs have TTL type thresholds. Unused inputs must be tied to ground and not left open.
8 VSS G Ground return: all signals are referenced to this ground.
9 LOL O Low-side gate driver sink-current output: connect to the gate of the low-side GaN FET with a short, low inductance path. A gate resistor can be used to adjust the turnoff speed.
10 LOH O Low-side gate driver source-current output: connect to the gate of high-side GaN FET with a short, low inductance path. A gate resistor can be used to adjust the turnon speed.
EP — — Exposed pad: TI recommends that the exposed pad on the bottom of the package be soldered to ground plane on the printed-circuit board to aid thermal dissipation.
(1) I = Input, O = Output, G = Ground, P = Power
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