ZHCSG18 March   2017 LM5141

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  High Voltage Start-up Regulator
      2. 7.3.2  VCC Regulator
      3. 7.3.3  Oscillator
      4. 7.3.4  Synchronization
      5. 7.3.5  Frequency Dithering (Spread Spectrum)
      6. 7.3.6  Enable
      7. 7.3.7  Power Good
      8. 7.3.8  Output Voltage
        1. 7.3.8.1 Minimum Output Voltage Adjustment
      9. 7.3.9  Current Sense
      10. 7.3.10 DCR Current Sensing
      11. 7.3.11 Error Amplifier and PWM Comparator
      12. 7.3.12 Slope Compensation
      13. 7.3.13 Hiccup Mode Current Limiting
      14. 7.3.14 Standby Mode
      15. 7.3.15 Soft-Start
      16. 7.3.16 Diode Emulation
      17. 7.3.17 High and Low Side Drivers
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Custom Design With WEBENCH® Tools
      3. 8.2.3 Inductor Calculation
      4. 8.2.4 Current Sense Resistor
      5. 8.2.5 Output Capacitor
      6. 8.2.6 Input Filter
        1. 8.2.6.1 EMI Filter Design
        2. 8.2.6.2 MOSFET Selection
        3. 8.2.6.3 Driver Slew Rate Control
        4. 8.2.6.4 Frequency Dithering
      7. 8.2.7 8.9 Control Loop
        1. 8.2.7.1 Feedback Compensator
      8. 8.2.8 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Layout Procedure
    2. 10.2 Layout Examples
  11. 11器件和文档支持
    1. 11.1 使用 WEBENCH® 工具创建定制设计
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Input voltage VIN –0.3 70 V
SW to PGND –0.3 70 V
SW to PGND (20 ns transient) –5 V
HB to SW –0.3 6.5 V
HB to SW (20 ns transient) –5 V
HO, HOL to SW –0.3 HB + 0.3 V
HO, HOL to SW (20 ns transient) –5 V
LO, LOL to PGND –0.3 VCC + 0.3 V
LO, LOL to PGND (20 ns transient) –1.5 V
OSC, SS, COMP, RES, DEMB, RT, DITH –0.3 VDD + 0.3 V
EN to PGND –0.3 70 V
VCC, VCCX, VDD, PG, FB –0.3 6.5 V
VOUT, CS –0.3 15.5 V
PGND to AGND –0.3 0.3 V
Operating junction temperature(2) –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)
MIN NOM MAX UNIT
VIN Input voltage VIN 3.8 65 V
SW to PGND –0.3 65 V
HB to SW –0.3 5 5.25 V
HO, HOL to SW –0.3 HB + 0.3 V
LO, LOL to PGND –0.3 5 5.25 V
FB, PG, OSC, SS, RES, DEMB, VCCX –0.3 5 V
EN to PGND –0.3 65 V
VCC, VDD –0.3 5 5.25 V
VOUT, CS 1.5 5 15 V
PGND to AGND –0.3 0.3 V
Operating junction temperature(2) –40 125 °C
(1) Recommended Operating Conditions are conditions under which the device is intended to be functional. For specifications and test conditions, see Electrical Characteristics.
(2) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.

6.4 Thermal Information

THERMAL METRIC(1) LM5141 UNIT
RGE (QFN)
24 PINS
RθJA Junction-to-ambient thermal resistance 34.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 36.8 °C/W
RθJB Junction-to-board thermal resistance 12.1 °C/W
ψJT Junction-to-top characterization parameter 0.5 °C/W
ψJB Junction-to-board characterization parameter 12.2 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 2.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

TJ = –40°C to +125°C, Typical values TJ = 25°C, VIN = 12 V, VCCX = 5 V, VOUT = 5 V, EN = 5 V, OSC = VDD, FSW = 2.2 MHz, no-load on the Drive Outputs (HO, HOL, LO, and LOL outputs), over operating free-air temperature range (unless otherwise noted)(1)(2)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN SUPPLY VOLTAGE
ISHUTDOWN Shutdown mode current VIN = 8–18 V, EN = 0 V, VCCX = 0 V 10 12.5 µA
ISTANDBY Standby current EN = 5 V, FB = VDD, VOUT in regulation, no-load, not switching, DEMB = GND. 35 45 µA
EN = 5 V, FB = 0 V, VOUT in regulation, no-load, not switching, VCCX = 5 V, DEMB = GND. 42 55
VCC REGULATOR
VCC(REG) VCC regulation voltage VIN = 6–18 V, 0–75 mA, VCCX = 0 V 4.75 5 5.25 V
VCC(UVLO) VCC under voltage threshold VCC rising, VCCX = 0 V 3.25 3.4 3.55 V
VCC(HYST) VCC hysteresis voltage VCCX = 0 V 175 mV
ICC(LIM) VCC sourcing current limit VCCX = 0 V 85 125 mA
VDDA
VDDA(REG) Internal bias supply power VCCX = 0 V 4.75 5 5.25 V
VDDA(UVLO) VCC rising, VCCX = 0 V 3.1 3.2 3.3 V
VDDA(HYST) VCCX = 0 V 125 mV
RVDDA VCCX = 0 V 55 Ω
VCCX
VCCX(ON) VCC rising 4.1 4.3 4.4 V
VCCX(HYST) 80 mV
R(VCCX) VCCX = 5 V 2 Ω
OSCILLATOR SELECT THRESHOLDS
Oscillator select threshold 2.2 MHz (OSC pin) 2.0 V
Oscillator select threshold 440 kHz (OSC pin) 0.8 V
CURENT LIMIT
V(CS) Current limit threshold ILSET = VDDA, measure from CS to VOUT 68 75 82 mV
tdly Current sense delay to output 40 ns
Current sense amplifier gain 11.4 12 12.6 V/V
ICS(BIAS) Amplifier input bias 10 nA
RES
I(RES) RES current source 20 µA
V(RES) RES threshold 1.2 V
Timer Timer hiccup mode fault 512 cycles
RDS(ON) RES pull-down 4 Ω
OUTPUT VOLTAGE REGULATION
3.3 V VIN = 3.8–42 V 3.273 3.3 3.327 V
5 V VIN = 5.5–42 V 4.96 5.0 5.04 V
FEEDBACK
VOUT select threshold 3.3 V VDD - 0.3 V
Regulated feedback voltage 1.193 1.2 1.207 V
FB(LOWRES) Resistance to ground on FB for FB = 0 detection 500 Ω
FB(EXTRES) Thevenin equivalent resistance at FB for external regulation detection FB < 2 V 5 kΩ
TRANSCONDUCTANCE AMPLIFIER
Gm Gain Feedback to COMP 1010 1200 µS
Input bias current 15 nA
Transconductance Amplifier source current COMP = 1 V, FB = 1 V 100 µA
Transconductance Amplifier sink current COMP = 1 V, FB = 1.4 V 100 µA
POWER GOOD
PG(UV) PG under voltage trip levels Falling with respect to the regulation voltage 90% 92% 94%
PG(OVP) PG over voltage trip levels Rising with respect to the regulation voltage 108% 110% 112%
PG(HYST) 3.4%
PG(VOL) PG Open collector, Isink = 2 mA 0.4 V
PG(rdly) OV filter time VOUT rising 25 µs
PG(fdly) UV filter time VOUT falling 30 µs
HO GATE DRIVER
VOLH HO Low-state output voltage IHO = 100 mA 0.05 V
VOHH HO High-state output voltage IHO = –100 mA, VOHH = VHB - VHO 0.07 V
trHO HO rise time (10% to 90%) CLOAD = 2700 pf 4 ns
tfHO HO fall time (90% to 10%) CLOAD = 2700 pf 3 ns
IOHH HO peak source current VHO = 0 V, SW = 0 V, HB = 5 V, VCCX = 5 V 3.25 Apk
IOLH HO peak sink current VCCX = 5 V 4.25 Apk
V(BOOT) UVLO HO falling 2.5 V
Hysteresis 110 mV
I(BOOT) Quiescent current 3 µA
LO GATE DRIVER
VOLL LO Low-state output voltage ILO = 100 mA 0.05 V
VOHL LO High-state output voltage ILO = –100 mA, VOHL = VCC - VLO 0.07 V
trLO LO rise time (10% to 90%) CLOAD = 2700 pf 4 ns
tfLO LO fall time (90% to 10%) CLOAD = 2700 pf 3 ns
IOHL LO peak source current VCCX = 5 V 3.25 Apk
IOLL LO peak sink current VCCX = 5 V 4.25 Apk
ADAPTIVE DEAD TIME CONTROL
V(GS-DET) VGS detection threshold VGS falling, no-load 2.5 V
tdly1 HO off to LO on dead time 20 40 ns
tdly2 LO off to HO on dead time 20 38 ns
DIODE EMULATION
VIL DEMB input low threshold 0.8 V
VIH FPWM input high threshold 2.0 V
SW Zero cross threshold –5 mV
ENABLE INPUT
VIL Enable input low threshold VCCX = 0 V 0.8 V
VIH Enable input high threshold VCCX = 0 V 2.0 V
IIkg Leakage EN logic input only 1 µA
SYN INPUT (DEMB pin)
VIL DEMB input low threshold 0.8 V
VIH DEMB input high threshold 2.0 V
DEMB input low frequency range 440 kHz 350 550 kHz
DEMB input high frequency range 2.2 MHz 1800 2600 kHz
DITHER
IDITHER Dither source/sink current 20 µA
VDITHER Dither high threshold 1.26 V
Dither low threshold 1.14 V
SOFT-START
ISS Soft-Start current 16 22 28 µA
RDS(ON) Soft-Start pull-down resistance 3 Ω
THERMAL
TSD Thermal Shutdown 175 ºC
Thermal shutdown hysteresis 15 ºC
(1) All minimum and maximum limits are specified by correlating the electrical characteristics to process and temperature variations and applying statistical process control.
(2) The junction temperature (TJ in ºC) is calculated from the ambient temperature (TA in ºC) and power dissipation (PD in Watts) as follows: TJ = TA + (PD × RθJA) where RθJA (in °C/W) is the package thermal impedance provided in the Thermal Information section.

6.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Oscillator Frequency 2.2 MHz OSC = VDDA, VIN = 8–18 V 2100 2200 2300 kHz
Oscillator Frequency 440 kHz OSC = GND, VIN = 8–18 V 420 440 460 kHz
RT Adjustment Range Minimum OSC = VDD, RTMIN = 61.9 kΩ 1710 1800 1890 kHz
Typical OSC = VDD, RTTYP = 49.9 kΩ 2100 2200 2300 kHz
2.2 MHz Maximum OSC = VDD, RTMAX = 43.2 kΩ 2405 2530 2655 kHz
RT Adjustment Range Minimum OSC = GND, RTMIN = 73.2 k 285 300 315 kHz
Typical OSC = GND, RTTYP = 49.9 kΩ 420 440 460 kHz
440 kHz Maximum OSC = GND, RTMAX = 44.2 kΩ 475 500 525 kHz
RT Response time RT= 61.9–43.2 kΩ 2 µs
RT Response time RT = 43.2–61.9 kΩ 3.5 µs
RT Response time 16 µs
ton Minimum on-time 45 66 ns
toff Minimum off-time 100 ns

6.7 Typical Characteristics

At TA = 25ºC, unless otherwise noted
LM5141 D001_SNVSAJ6.gif
VIN 8–18 V EN = 12 V 2.2 MHz
VOUT 5 V FPWM
Figure 1. Efficiency vs IOUT
LM5141 D003_SNVSAJ6.gif
EN = 12 V
Figure 3. ISTANDBY vs VIN
LM5141 D005_SNVSAJ6.gif
VIN 6-18 V EN = GND
Figure 5. VCC(REG) vs VIN
LM5141 D007_SNVSAJ6.gif
VCC Rising EN = 12 V
Figure 7. VDD(REG) vs Temperature
LM5141 D009_SNVSAJ6.gif
VCC Rising EN = 12 V
Figure 9. VCCX(ON) vs Temperature
LM5141 D011_SNVSAJ6.gif
VIN 12 V FB = VDDA EN = 12 V
Figure 11. 3.3-V Output Voltage Regulation vs IOUT
LM5141 D013_SNVSAJ6.gif
VIN 12 V EN = 12 V OSC = VDDA
Figure 13. 2.2-MHz Oscillator Frequency vs Temperature
LM5141 D015_SNVSAJ6.gif
VIN 18 V
Figure 15. ton Minimum vs Temperature
LM5141 D017_SNVSAJ6.gif
VIN 12 V
Figure 17. RT Frequency vs Temperature (2.2 MHz)
LM5141 D002_SNVSAJ6.gif
VIN 8–18 V EN = 12 V 2.2 MHz
VOUT 5 V DEMB
Figure 2. Efficiency vs IOUT
LM5141 D004_SNVSAJ6.gif
VIN 8–18 V EN = 0 V
Figure 4. ISHUTDOWN vs Temperature
LM5141 D006_SNVSAJ6.gif
VIN 8–18 V EN = 12 V
Figure 6. VCC(UVLO) vs Temperature
LM5141 D008_SNVSAJ6.gif
VCC Rising EN = 12 V
Figure 8. VDD(UVLO) vs Temperature
LM5141 D010_SNVSAJ6.gif
VIN 12 V EN = 12 V
Figure 10. Current Sense Amplifier Gain vs Temperature
LM5141 D012_SNVSAJ6.gif
VIN 12 V EN = 12 V FB = GND
Figure 12. 5-V Output Voltage Regulation vs IOUT
LM5141 D014_SNVSAJ6.gif
VIN 12 V EN = 12 V OSC = AGND
Figure 14. 440-kHz Oscillator Frequency vs Temperature
LM5141 D016_SNVSAJ6.gif
VIN 3.8 V VOUT 3.3 V
Figure 16. toff Minimum vs Temperature
LM5141 D018_SNVSAJ6.gif
VIN 12 V
Figure 18. RT Frequency vs Temperature (440 kHz)
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