ZHCSPX4A February 2022 – April 2022 LM5152-Q1 , LM51521-Q1
PRODUCTION DATA
When SS is greater than 1.5 V, the device enters deep sleep mode after at least 40 μs in OVP status. The device re-enters active mode if VOUT falls down below VOVP. During bypass operation, the loss, which is caused by the body diode of the high-side MOSFET, is minimized. The high-side driver of the LM51521-Q1 does not turn on in the deep sleep mode. See Section 9.4.1.5 for more information.