The device provides an internal switch where r_DS(ON) is typically 133 mΩ when the BIAS pin is greater than 5 V. The r_DS(ON) of the internal switch is increased when the BIAS pin is less than 5 V. The device temperature must be checked at the minimum supply voltage especially when the BIAS pin is less than 5 V.

The dV/dT of the SW pin must be limited during the 90-µs internal start-up delay to avoid a false turn-on, which is caused by the coupling through C_DG parasitic capacitance of the internal MOSFET switch.