ZHCSIQ6B September   2018  – August 2021 LM5176-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Fixed Frequency Valley/Peak Current Mode Control with Slope Compensation
      2. 7.3.2  VCC Regulator and Optional BIAS Input
      3. 7.3.3  Enable/UVLO
      4. 7.3.4  Soft-Start
      5. 7.3.5  Overcurrent Protection
      6. 7.3.6  Average Input/Output Current Limiting
      7. 7.3.7  Operation Above 40-V Input
      8. 7.3.8  CCM Operation
      9. 7.3.9  Frequency and Synchronization (RT/SYNC)
      10. 7.3.10 Frequency Dithering
      11. 7.3.11 Output Overvoltage Protection (OVP)
      12. 7.3.12 Power Good (PGOOD)
      13. 7.3.13 Gm Error Amplifier
      14. 7.3.14 Integrated Gate Drivers
      15. 7.3.15 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown, Standby, and Operating Modes
      2. 7.4.2 MODE Pin Configuration
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Custom Design with WEBENCH Tools
        2. 8.2.2.2  Frequency
        3. 8.2.2.3  VOUT
        4. 8.2.2.4  Inductor Selection
        5. 8.2.2.5  Output Capacitor
        6. 8.2.2.6  Input Capacitor
        7. 8.2.2.7  Sense Resistor (RSENSE)
        8. 8.2.2.8  Slope Compensation
        9. 8.2.2.9  UVLO
        10. 8.2.2.10 Soft-Start Capacitor
        11. 8.2.2.11 Dither Capacitor
        12. 8.2.2.12 MOSFETs QH1 and QL1
        13. 8.2.2.13 MOSFETs QH2 and QL2
        14. 8.2.2.14 Frequency Compensation
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 第三方米6体育平台手机版_好二三四免责声明
      2. 11.1.2 Development Support
        1. 11.1.2.1 Custom Design with WEBENCH Tools
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.3.14 Integrated Gate Drivers

The LM5176-Q1 provides four N-channel MOSFET gate drivers: two floating high-side gate drivers at the HDRV1 and HDRV2 pins, and two ground referenced low-side drivers at the LDRV1 and LDRV2 pins. Each driver is capable of sourcing 1.8 A and sinking 2.2-A peak current. In buck operation, LDRV1 and HDRV1 are switched by the PWM controller while HDRV2 remains continuously on. In boost operation, LDRV2 and HDRV2 are switched while HDRV1 remains continuously on.

The low-side gate drivers are powered from VCC and the high-side gate drivers HDRV1 and HDRV2 are powered from bootstrap capacitors CBOOT1 (between BOOT1 and SW1) and CBOOT2 (between BOOT2 and SW2), respectively. The CBOOT1 and CBOOT2 capacitors are charged through external Schottky diodes connected to the VCC pin as shown in Figure 8-1.

In most applications, ceramic capacitors of 16 V or higher voltage rating and values between 0.1 µF and 0.22 µF are sufficient for CBOOT1 and CBOOT2.
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