ZHCSGN6D June 2017 – August 2021 LM5176
PRODUCTION DATA
- 1 特性
- 2 应用
- 3 说明
- 4 Revision History
- 5 Pin Configuration and Functions
- 6 Specifications
-
7 Detailed Description
- 7.1 Overview
- 7.2 Functional Block Diagram
- 7.3
Feature Description
- 7.3.1 Fixed Frequency Valley/Peak Current Mode Control with Slope Compensation
- 7.3.2 VCC Regulator and Optional BIAS Input
- 7.3.3 Enable/UVLO
- 7.3.4 Soft Start
- 7.3.5 Overcurrent Protection
- 7.3.6 Average Input/Output Current Limiting
- 7.3.7 Operation Above 40-V Input
- 7.3.8 CCM Operation
- 7.3.9 Frequency and Synchronization (RT/SYNC)
- 7.3.10 Frequency Dithering
- 7.3.11 Output Overvoltage Protection (OVP)
- 7.3.12 Power Good (PGOOD)
- 7.3.13 Gm Error Amplifier
- 7.3.14 Integrated Gate Drivers
- 7.3.15 Thermal Shutdown
- 7.4 Device Functional Modes
-
8 Application and Implementation
- 8.1 Application Information
- 8.2
Typical Application
- 8.2.1 Design Requirements
- 8.2.2
Detailed Design Procedure
- 8.2.2.1 Custom Design with WEBENCH Tools
- 8.2.2.2 Frequency
- 8.2.2.3 VOUT
- 8.2.2.4 Inductor Selection
- 8.2.2.5 Output Capacitor
- 8.2.2.6 Input Capacitor
- 8.2.2.7 Sense Resistor (RSENSE)
- 8.2.2.8 Slope Compensation
- 8.2.2.9 UVLO
- 8.2.2.10 Soft-Start Capacitor
- 8.2.2.11 Dither Capacitor
- 8.2.2.12 MOSFETs QH1 and QL1
- 8.2.2.13 MOSFETs QH2 and QL2
- 8.2.2.14 Frequency Compensation
- 8.2.3 Application Curves
- 9 Power Supply Recommendations
- 10Layout
- 11Device and Documentation Support
- 12Mechanical, Packaging, and Orderable Information
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8.2.2.13 MOSFETs QH2 and QL2
The output side MOSFETs QH2 and QL2 see the output voltage of 12 V and additional transient spikes at SW2 during switching. Therefore, QH2 and QL2 should be rated for 20 V or more. The gate plateau voltages of the MOSFETs should be smaller than the minimum input voltage of the converter, otherwise the MOSFETs may not fully enhance during start-up or overload conditions.
The power loss in QH2 in buck mode of operation is approximated by:
The power loss in QL2 in the boost mode of operation consists of both conduction and switching loss components given by Equation 35 and Equation 36, respectively:
The rise (tr) and the fall (tf) times can be based on the MOSFET data sheet information or measured in the lab. Typically, a MOSFET with smaller RDSON (lower conduction loss) has longer rise and fall times (larger switching loss).
The power loss in QH2 in the boost mode of operation is shown in Equation 37:
