ZHCSL46D March   2020  – June 2021 LM62440-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 计时特性
    7. 8.7 Systems Characteristics
    8. 8.8 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  EN Uses for Enable and VIN UVLO
      2. 9.3.2  MODE/SYNC Pin Operation
        1. 9.3.2.1 Level-Dependent MODE/SYNC Pin Control
        2. 9.3.2.2 Pulse-Dependent MODE/SYNC Pin Control
        3. 9.3.2.3 Clock Locking
      3. 9.3.3  PGOOD Output Operation
      4. 9.3.4  Internal LDO, VCC UVLO, and BIAS Input
      5. 9.3.5  Bootstrap Voltage and VCBOOT-UVLO (CBOOT Pin)
      6. 9.3.6  Adjustable SW Node Slew Rate
      7. 9.3.7  Spread Spectrum
      8. 9.3.8  Soft Start and Recovery From Dropout
      9. 9.3.9  Output Voltage Setting
      10. 9.3.10 Overcurrent and Short Circuit Protection
      11. 9.3.11 Thermal Shutdown
      12. 9.3.12 Input Supply Current
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Mode
      2. 9.4.2 Standby Mode
      3. 9.4.3 Active Mode
        1. 9.4.3.1 CCM Mode
        2. 9.4.3.2 Auto Mode - Light Load Operation
          1. 9.4.3.2.1 Diode Emulation
          2. 9.4.3.2.2 Frequency Reduction
        3. 9.4.3.3 FPWM Mode - Light Load Operation
        4. 9.4.3.4 Minimum On-time (High Input Voltage) Operation
        5. 9.4.3.5 Dropout
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1  Choosing the Switching Frequency
        2. 10.2.2.2  Setting the Output Voltage
        3. 10.2.2.3  Inductor Selection
        4. 10.2.2.4  Output Capacitor Selection
        5. 10.2.2.5  Input Capacitor Selection
        6. 10.2.2.6  BOOT Capacitor
        7. 10.2.2.7  BOOT Resistor
        8. 10.2.2.8  VCC
        9. 10.2.2.9  BIAS
        10. 10.2.2.10 CFF and RFF Selection
        11. 10.2.2.11 External UVLO
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Ground and Thermal Considerations
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 接收文档更新通知
    3. 13.3 支持资源
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 术语表
  14. 14Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002(1)  
Device HBM Classification Level 2		 ±2000 V
Charged device model (CDM), per AEC Q100-011
Device CDM Classification Level C5		 ±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
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