ZHCSLY1D February   2020  – August 2021 LM61480-Q1 , LM61495-Q1 , LM62460-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Characteristics
    7. 7.7 Switching Characteristics
    8. 7.8 System Characteristics
    9. 7.9 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Output Voltage Selection
      2. 8.3.2  Enable EN Pin and Use as VIN UVLO
      3. 8.3.3  SYNC/MODE Uses for Synchronization
      4. 8.3.4  Clock Locking
      5. 8.3.5  Adjustable Switching Frequency
      6. 8.3.6  RESET Output Operation
      7. 8.3.7  Internal LDO, VCC UVLO, and BIAS Input
      8. 8.3.8  Bootstrap Voltage and VCBOOT-UVLO (CBOOT Pin)
      9. 8.3.9  Adjustable SW Node Slew Rate
      10. 8.3.10 Spread Spectrum
      11. 8.3.11 Soft Start and Recovery From Dropout
      12. 8.3.12 Overcurrent and Short Circuit Protection
      13. 8.3.13 Hiccup
      14. 8.3.14 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Standby Mode
      3. 8.4.3 Active Mode
        1. 8.4.3.1 Peak Current Mode Operation
        2. 8.4.3.2 Auto Mode Operation
          1. 8.4.3.2.1 Diode Emulation
        3. 8.4.3.3 FPWM Mode Operation
        4. 8.4.3.4 Minimum On-time (High Input Voltage) Operation
        5. 8.4.3.5 Dropout
        6. 8.4.3.6 Recovery from Dropout
        7. 8.4.3.7 Other Fault Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Choosing the Switching Frequency
        2. 9.2.2.2  Setting the Output Voltage
        3. 9.2.2.3  Inductor Selection
        4. 9.2.2.4  Output Capacitor Selection
        5. 9.2.2.5  Input Capacitor Selection
        6. 9.2.2.6  BOOT Capacitor
        7. 9.2.2.7  BOOT Resistor
        8. 9.2.2.8  VCC
        9. 9.2.2.9  CFF and RFF Selection
        10. 9.2.2.10 RSPSP Selection
        11. 9.2.2.11 RT Selection
        12. 9.2.2.12 RMODE Selection
        13. 9.2.2.13 External UVLO
        14. 9.2.2.14 Maximum Ambient Temperature
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Ground and Thermal Considerations
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 术语表
    6. 12.6 Electrostatic Discharge Caution
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) HBM ESD Clasification Level 2 ±2000 V
Charged-device model (CDM), per AEC Q100-011 CDM ESD clasiffication Level C5 ±750 V
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification
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