To optimize EMI performance, place the components in the high di/dt current path, as shown in Figure 9-1, as close as possible to each other. When the components are close to each other, the area of the loop enclosed by these components, and the parasitic inductance of this loop, are minimized. The noises generated by the pulsing current and parasitic inductances are then minimized.

Figure 9-1 Pulsing Current Path of Buck Converter

In a buck converter, the high di/dt current path is composed of the HS and LS MOSFETs and the input capacitors. Because the two MOSFETs are integrated inside the device, they are closer to each other than in discrete solutions. PVIN and PGND pins are the connections from the MOSFETs to the input capacitors. The first step of the layout must be placing the input capacitors, especially the small value ceramic bypass one, as close as possible to PVIN and PGND pins.

The LM73605-Q1/6-Q1 pinout is optimized for low EMI layout. Multiple pins are used for PVIN and PGND to minimized bond wire resistances and inductances. The PVIN and PGND pins are right next to each other to simplify optimal layout. The CBOOT pin is placed next to SW pin for easy and compact C_BOOT capacitor layout.