SNOS926F May   1999  – September 2014 LM7372

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 ±15V DC Electrical Characteristics
    6. 6.6 ±15V AC Electrical Characteristics
    7. 6.7 ±5V DC Electrical Characteristics
    8. 6.8 ±5V AC Electrical Characteristics
  7. 7 Typical Performance Characteristics
  8. 8 Detailed Description
    1. 8.1 Functional Block Diagram
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
    3. 9.3 Application Details
      1. 9.3.1 High Frequency/Large Signal Swing Considerations
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
  12. 12Device and Documentation Support
    1. 12.1 Trademarks
    2. 12.2 Electrostatic Discharge Caution
    3. 12.3 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DDA|8
  • D|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings(1)(3)(10)

over operating free-air temperature range (unless otherwise noted)
PARAMETER MIN MAX UNIT
Suppy Voltage (V+−V−) 36 V
Differential Input Voltage (VS = ±15V) ±10 V
Output Short Circuit to Ground(3) Continuous
Soldering Information     Infrared or Convection Reflow (20 sec.) 235 °C
Wave Soldering Lead Temperature (10 sec.) 260 °C
Input Voltage V− to V+ V
Maximum Junction Temperature(4) 150 °C

6.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range −65 150 °C
V(ESD) Electrostatic discharge(2) Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) 1500 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) 200
(1) JEDEC document JEP155 states that 1500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 200-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions(1)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply Voltage 9 36 V
Operating Temperature Range   −40 85 °C

6.4 Thermal Information

THERMAL METRIC(1) DDA D UNIT
8 PINS(4) 16 PINS(4)
RθJA Junction-to-ambient thermal resistance 106 47 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 ±15V DC Electrical Characteristics

Unless otherwise specified, all limits ensured for VCM = 0V and RL = 1kΩ. Boldface apply at the temperature extremes.
PARAMETER TEST CONDITIONS MIN(6) TYP(5) MAX(6) UNIT
VOS Input Offset Voltage 2.0 8.0
10.0		 mV
TC VOS Input Offset Voltage Average Drift 12 µV/°C
IB Input Bias Current 2.7 10
12		 µA
IOS Input Offset Current 0.1 4.0
6.0		 µA
RIN Input Resistance Common Mode 40 MΩ
Differential Mode 3.3 MΩ
RO Open Loop Output Resistance 15 Ω
CMRR Common Mode Rejection Ratio VCM = ±10V 75
70		 93 dB
PSRR Power Supply Rejection Ratio VS = ±15V to ±5V 75
70		 90 dB
VCM Input Common-Mode Voltage Range CMRR > 60dB ±13 V
AV Large Signal Voltage Gain(7) RL = 1kΩ 75
70		 85 dB
RL = 100Ω 70
66		 81 dB
VO Output Swing RL = 1kΩ 13
12.7		 13.4 V
−13
−12.7		 −13.3 V
IOUT = − 150mA 11.8
11.4		 12.4 V
IOUT = 150mA −11.2
−10.8		 −11.9 V
ISC Output Short Circuit Current Sourcing 260 mA
Sinking 250 mA
IS Supply Current (both Amps) 13 17
19		 mA

6.6 ±15V AC Electrical Characteristics

Unless otherwise specified, all limits ensured for VCM = 0V and RL = 1kΩ. Boldface apply at the temperature extremes.
PARAMETER TEST CONDITIONS MIN(6) TYP(5) MAX(6) UNIT
SR Slew Rate(8) AV = +2, VIN 13VP-P 3000 V/µs
AV = +2, VIN 10VP-P 2000
Unity Bandwidth Product 120 MHz
−3dB Frequency AV = +2 220 MHz
φm Phase Margin AVOL = 6dB 70 deg
tS Settling Time (0.1%) AV = −1, AO = ±5V,
RL = 500Ω		 50 ns
tP Propagation Delay AV = −2, VIN = ±5V,
RL = 500Ω		 6.0 ns
AD Differential Gain(9) 0.01%
φD Differential Phase(9) 0.02 deg
hd2 Second Harmonic Distortion
FIN = 1MHz, AV = +2		 VOUT = 2VP-P, RL = 100Ω −80 dBc
VOUT = 16.8VP-P, RL = 100Ω −73 dBc
hd3 Third Harmonic Distortion
FIN = 1MHz, AV = +2		 VOUT = 2VP-P, RL = 100Ω −91 dBc
VOUT = 16.8VP-P, RL = 100Ω −67 dBc
IMD Intermodulation Distortion Fin 1 = 75kHz,
Fin 2 = 85kHz
VOUT = 16.8VP-P, RL = 100Ω		 −87 dBc
en Input-Referred Voltage Noise f = 10kHz 14 nV/√Hz
in Input-Referred Current Noise f = 10kHz 1.5 pA/√Hz

6.7 ±5V DC Electrical Characteristics

Unless otherwise specified, all limits ensured for VCM = 0V and RL = 1kΩ. Boldface apply at the temperature extremes.
PARAMETER TEST CONDITIONS MIN(6) TYP(5) MAX(6) UNIT
VOS Input Offset Voltage 2.2 8.0
10.0		 mV
TC VOS Input Offset Voltage Average Drift 12 µV/°C
IB Input Bias Current 3.3 10
12		 µA
IOS Input Offset Current 0.1 4
6		 µA
RIN Input Resistance Common Mode 40 MΩ
Differential Mode 3.3 MΩ
RO Open Loop Output Resistance 15 Ω
CMRR Common Mode Rejection Ratio VCM = ±2.5V 70
65		 90 dB
PSRR Power Supply Rejection Ratio VS = ±15V to ±5V 75
70		 90 dB
VCM Input Common-Mode Voltage Range CMRR > 60dB ±3 V
AV Large Signal Voltage Gain(7) RL = 1kΩ 70
65		 78 dB
RL = 100Ω 64
60		 72 dB
VO Output Swing RL = 1kΩ 3.2
3.0		 3.4 V
−3.2
−3.0		 −3.4 V
IOUT = − 80mA 2.5
2.2		 2.8 V
IOUT = 80mA −2.5
−2.2		 −2.7 V
ISC Output Short Circuit Current Sourcing 150 mA
Sinking 150 mA
IS Supply Current (both Amps) 12.4 16
18		 mA

6.8 ±5V AC Electrical Characteristics

Unless otherwise specified, all limits ensured for VCM = 0V and RL = 1kΩ. Boldface apply at the temperature extremes.
PARAMETER TEST CONDITIONS MIN(6) TYP(5) MAX(6) UNIT
SR Slew Rate(8) AV = +2, VIN 3VP-P 700 V/µs
Unity Bandwidth Product 100 MHz
−3dB Frequency AV = +2 125 MHz
φm Phase Margin 70 deg
tS Settling Time (0.1%) AV = −1, VO = ±1V, RL = 500Ω 70 ns
tP Propagation Delay AV = +2, VIN = ±1V, RL = 500Ω 7 ns
AD Differential Gain(9) 0.02%
φD Differential Phase(9) 0.03 deg
hd2 Second Harmonic Distortion
FIN = 1MHz, AV = +2		 VOUT = 2VP-P, RL = 100Ω −84 dBc
hd3 Third Harmonic Distortion
FIN = 1MHz, AV = +2		 VOUT = 2VP-P, RL = 100Ω −94 dBc
en Input-Referred Voltage Noise f = 10kHz 14 nV/√Hz
in Input-Referred Current Noise f = 10kHz 1.8 pA/√Hz
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics.
(2) For testing purposes, ESD was applied using human body model, 1.5kΩ in series with 100pF. Machine model, 0Ω in series with 200pF.
(3) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C.
(4) The maximum power dissipation is a function of T(JMAX), RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (T(JMAX) – TA)/RθJA. All numbers apply for packages soldered directly into a PC board. The value for RθJA is 106°C/W for the 16-Pin SOIC package. With a total area of 4sq. in of 1oz CU connected to pins 1,6,8,9 & 16, RθJA for the 16-Pin SOIC is decreased to 70°C/W. 8-Pin SO PowerPAD package RθJA is with 2 in2 heatsink (top and bottom layer each) and 1 oz. copper (see Table 2 and Application and Implementation )
(5) Typical values represent the most likely parametic norm.
(6) All limits are specified by testing or statistical analysis.
(7) Large signal voltage gain is the total output swing divided by the input signal required to produce that swing. For VS = ±15V, VOUT = ± 10V. For VS = ±5V, VOUT = ±2V
(8) Slew Rate is the average of the rising and falling slew rates.
(9) Differential gain and phase are measured with AV = +2, VIN = 1VPP at 3.58 MHz and output is 150Ω terminated.
(10) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications.
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