ZHCSNL2A February   2022  – May 2022 LM74502-Q1 , LM74502H-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Input Voltage (VS)
      2. 9.3.2 Charge Pump (VCAP)
      3. 9.3.3 Gate Driver (GATE an SRC)
        1. 9.3.3.1 Inrush Current Control
      4. 9.3.4 Enable and Undervoltage Lockout (EN/UVLO)
      5. 9.3.5 Overvoltage Protection (OV)
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Mode
      2. 9.4.2 Conduction Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Design Considerations
        2. 10.2.2.2 MOSFET Selection
        3. 10.2.2.3 Overvoltage Protection
        4. 10.2.2.4 Charge Pump VCAP, Input and Output Capacitance
      3. 10.2.3 Selection of TVS Diodes for 12-V Battery Protection Applications
      4. 10.2.4 Selection of TVS Diodes and MOSFET for 24-V Battery Protection Applications
      5. 10.2.5 Application Curves
    3. 10.3 Surge Stopper Using LM74502-Q1, LM74502H-Q1
      1. 10.3.1 VS Capacitance, Resistor R1 and Zener Clamp (DZ)
      2. 10.3.2 Overvoltage Protection
      3. 10.3.3 MOSFET Selection
    4. 10.4 Fast Turn-On and Turn-Off High Side Switch Driver Using LM74502H-Q1
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 接收文档更新通知
    2. 13.2 支持资源
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 术语表
  14. 14Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DDF|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.5 Electrical Characteristics

TJ = –40°C to +125°C; typical values at TJ = 25°C, V(VS) = 12 V, C(VCAP) = 0.1 µF, V(EN/UVLO) = 3.3 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VS SUPPLY VOLTAGE
V(VS) Operating input voltage 4 60 V
V (VS_POR) VS POR Rising threshold 3.9 V
VS POR Falling threshold 2.2 2.8 3.1 V
V(VS POR(Hys)) VS POR Hysteresis 0.44 0.67 V
I(SHDN) Shutdown Supply Current V(EN/UVLO) = 0 V 0.9 1.5 µA
I(Q) Operating Quiescent Current IGND 45 65 µA
I(REV) I(S) leakage current during input reverse polarity 0 V ≤ V(VS) ≤ – 65 V 100 150 µA
ENABLE INPUT
V(EN_UVLOF) Enable/UVLO falling threshold 1.027 1.14 1.235 V
V(EN_UVLOR) Enable/UVLO rising threshold 1.16 1.24 1.32
V(ENF) Enable threshold voltage for low IQ shutdown 0.32 0.64 0.94 V
V(EN_Hys) Enable Hysteresis 38 90 132 mV
I(EN) Enable sink current V(EN/UVLO) = 12 V 3 5 µA
GATE DRIVE
I(GATE) Peak source current V(GATE) – V(SRC) = 5 V 40 60 77 µA
I(GATE) Peak source current V(GATE) – V(SRC) = 5 V, LM74502H-Q1 3 11 mA
Peak sink current EN/UVLO= High to Low
V(GATE) – V(SRC) = 5 V		 2370 mA
RDSON discharge switch RDSON EN/UVLO = High to Low
V(GATE) – V(SRC) = 100 mV		 0.4 2 Ω
CHARGE PUMP
I(VCAP) Charge Pump source current (Charge pump on) V(VCAP) – V(S) = 7 V 162 300 600 µA
Charge Pump sink current (Charge pump off) V(VCAP) – V(S) = 14 V 5 10 µA
V(VCAP) – V(VS) Charge pump voltage at V(S) = 3.2 V I(VCAP) ≤ 30 µA 8 V
V(VCAP) – V(VS) Charge pump turn-on voltage 10.3 11.6 13 V
V(VCAP) – V(VS) Charge pump turn-off voltage 11 12.4 13.9 V
V(VCAP) – V(VS) Charge Pump Enable comparator Hysteresis 0.45 0.8 1.25 V
V(VCAP UVLO) V(VCAP) – V(VS)  UV release at rising edge 5.7 6.5 7.5 V
V(VCAP UVLO) V(VCAP) – V(VS) UV threshold at falling edge 5.05 5.4 6.2 V
OVERVOLTAGE PROTECTION
V(OVR)
Overvoltage threshold input, rising

 1.165 1.25 1.333 V
V(OVF)
Overvoltage threshold input, falling

 1.063 1.143 1.222 V
V(OV_Hys) OV Hysteresis 100 mV
I(OV) OV Input leakage current 0 V < V(OV) < 5 V 12 50 110 nA
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