LM74720-Q1 controls two N-channel power MOSFETs with GATE used to control diode MOSFET to emulate an ideal diode and PD controlling second MOSFET for power path cut-off when disabled or during an overvoltage protection and provide inrush current limiting. IQ during operation (EN = High) is < 35 µA and <3.3 µA during shutdown mode (EN = Low). LM74720-Q1 can be placed into low quiescent current mode using EN = low, where both GATE and PD are turned OFF.