ZHCSQT8
October 2023
LM74930-Q1
PRODUCTION DATA
1
1
特性
2
应用
3
说明
4
Revision History
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Switching Characteristics
6.7
Typical Characteristics
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
Charge Pump
7.3.2
Dual Gate Control (DGATE, HGATE)
7.3.2.1
Load Disconnect Switch Control (HGATE, OUT)
7.3.2.2
Reverse Battery Protection (A, C, DGATE)
7.3.3
Overcurrent Protection (CS+, CS-, ILIM, IMON, TMR)
7.3.4
Overcurrent Protection with Circuit Breaker (ILIM, TMR)
7.3.5
Overcurrent Protection With Latch-Off
7.3.6
Short-Circuit Protection (ISCP)
7.3.6.1
Device Wake-Up With Output Short-Circuit Condition
7.3.7
Analog Current Monitor Output (IMON)
7.3.8
Overvoltage and Undervoltage Protection (OV, UVLO, OVCLAMP)
7.3.9
Disabling Reverse Current Blocking Functionality (MODE)
7.3.10
Device Functional Modes
7.3.10.1
Low Quiescent Current Shutdown Mode (EN)
8
Applications and Implementation
8.1
Application Information
8.2
Typical Application: 200-V Unsuppressed Load Dump Protection Application
8.2.1
Design Requirements for 200-V Unsuppressed Load Dump Protection
8.2.2
Detailed Design Procedure
8.2.2.1
VS Capacitance, Resistor R1 and Zener Clamp (DZ)
8.2.2.2
Charge Pump Capacitance VCAP
8.2.2.3
Input and Output Capacitance
8.2.2.4
Overvoltage and Undervoltage Protection Component Selection
8.2.2.5
Selection of Scaling Resistor (RSET) and Short-Circuit Protection Setting Resistor (RSCP)
8.2.2.6
Overcurrent Limit (ILIM), Circuit Breaker Timer (TMR), and Current Monitoring Output (IMON) Selection
8.2.2.7
Selection of Current Sense Resistor, RSNS
8.2.2.8
Hold-Up Capacitance
8.2.2.9
MOSFET Q1 Selection
8.2.2.10
MOSFET Q2 Selection
8.2.2.11
Input TVS Selection
8.2.3
Application Curves
8.3
Best Design Practices
8.4
Power Supply Recommendations
8.4.1
Transient Protection
8.4.2
TVS Selection for 12-V Battery Systems
8.4.3
TVS Selection for 24-V Battery Systems
8.5
Layout
8.5.1
Layout Guidelines
8.5.2
Layout Example
9
Device and Documentation Support
9.1
接收文档更新通知
9.2
支持资源
9.3
Trademarks
9.4
静电放电警告
9.5
术语表
10
Mechanical, Packaging, and Orderable Information
封装选项
机械数据 (封装 | 引脚)
RGE|24
MPQF124G
散热焊盘机械数据 (封装 | 引脚)
RGE|24
QFND703
订购信息
zhcsqt8_oa
6.7
Typical Characteristics
Figure 6-1
Operating Quiescent Current vs Supply Voltage
A.
Figure 6-3
Charge Pump Current vs Supply Voltage at CAP – VS ≥ 6 V
A.
Figure 6-5
DGATE Drive Voltage vs Supply Voltage
A.
Figure 6-7
ANODE Leakage Current vs Reverse ANODE Voltage
A.
Figure 6-9
OV Threshold vs Temperature
Figure 6-11
ISCP to CS– Threshold vs Temperature (HV SCP Comparator)
Figure 6-13
ISCP Bias Current vs Temperature
Figure 6-15
VS POR Threshold vs Temperature
Figure 6-17
DGATE Turn-On Delay During Forward Conduction
Figure 6-19
HGATE Turn-OFF Delay During Output Short Circuit Condition
Figure 6-2
Shutdown Current vs Supply Voltage
A.
Figure 6-4
Charge Pump V-I Characteristics at VS ≥ 12 V
A.
Figure 6-6
HGATE Drive Voltage vs Supply Voltage
A.
Figure 6-8
UVLO Threshold vs Temperature
A.
Figure 6-10
Charge Pump UVLO Threshold vs Temperature
Figure 6-12
ISCP to CS– Threshold vs Temperature (LV SCP Comparator)
A.
Figure 6-14
VA POR Threshold vs Temperature
Figure 6-16
DGATE Turn OFF Delay
Figure 6-18
HGATE Turn-OFF Delay During Input Overvoltage Condition
Figure 6-20
Current Monitor Output vs Sense Voltage (R
IMON
= 5 kΩ, R
SET
= 50 Ω)
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