ZHCSQT8 October   2023 LM74930-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Charge Pump
      2. 7.3.2  Dual Gate Control (DGATE, HGATE)
        1. 7.3.2.1 Load Disconnect Switch Control (HGATE, OUT)
        2. 7.3.2.2 Reverse Battery Protection (A, C, DGATE)
      3. 7.3.3  Overcurrent Protection (CS+, CS-, ILIM, IMON, TMR)
      4. 7.3.4  Overcurrent Protection with Circuit Breaker (ILIM, TMR)
      5. 7.3.5  Overcurrent Protection With Latch-Off
      6. 7.3.6  Short-Circuit Protection (ISCP)
        1. 7.3.6.1 Device Wake-Up With Output Short-Circuit Condition
      7. 7.3.7  Analog Current Monitor Output (IMON)
      8. 7.3.8  Overvoltage and Undervoltage Protection (OV, UVLO, OVCLAMP)
      9. 7.3.9  Disabling Reverse Current Blocking Functionality (MODE)
      10. 7.3.10 Device Functional Modes
        1. 7.3.10.1 Low Quiescent Current Shutdown Mode (EN)
  9. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application: 200-V Unsuppressed Load Dump Protection Application
      1. 8.2.1 Design Requirements for 200-V Unsuppressed Load Dump Protection
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  VS Capacitance, Resistor R1 and Zener Clamp (DZ)
        2. 8.2.2.2  Charge Pump Capacitance VCAP
        3. 8.2.2.3  Input and Output Capacitance
        4. 8.2.2.4  Overvoltage and Undervoltage Protection Component Selection
        5. 8.2.2.5  Selection of Scaling Resistor (RSET) and Short-Circuit Protection Setting Resistor (RSCP)
        6. 8.2.2.6  Overcurrent Limit (ILIM), Circuit Breaker Timer (TMR), and Current Monitoring Output (IMON) Selection
        7. 8.2.2.7  Selection of Current Sense Resistor, RSNS
        8. 8.2.2.8  Hold-Up Capacitance
        9. 8.2.2.9  MOSFET Q1 Selection
        10. 8.2.2.10 MOSFET Q2 Selection
        11. 8.2.2.11 Input TVS Selection
      3. 8.2.3 Application Curves
    3. 8.3 Best Design Practices
    4. 8.4 Power Supply Recommendations
      1. 8.4.1 Transient Protection
      2. 8.4.2 TVS Selection for 12-V Battery Systems
      3. 8.4.3 TVS Selection for 24-V Battery Systems
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 接收文档更新通知
    2. 9.2 支持资源
    3. 9.3 Trademarks
    4. 9.4 静电放电警告
    5. 9.5 术语表
  11. 10Mechanical, Packaging, and Orderable Information

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8.2.2.1 VS Capacitance, Resistor R1 and Zener Clamp (DZ)

A minimum of 1-µF CVS capacitance is required. During input overvoltage transient, resistor RVS and Zener diode, DZ, are used to protect VS pin from exceeding the maximum ratings by clamping VVS to 60 V. Choosing RVS = 10 kΩ, the peak power dissipated in Zener diode DZ can be calculated using Equation 10 .

Equation 10. PDZ=VDZ×VINMAX-VDZ RVS

Where VDZ is the breakdown voltage of Zener diode. Select the Zener diode that can handle peak power requirement.

Peak power dissipated in resistor R1 can be calculated using Equation 11.

Equation 11. PRVS=VINMAX-VDZ2 RVS

Select a resistor package which can handle peak power and maximum DC voltage.
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