ZHCSKV2A February   2020  – July 2020 LM76005-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 System Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Fixed-Frequency, Peak-Current-Mode Control
      2. 7.3.2  Light Load Operation Modes — PFM and FPWM
      3. 7.3.3  Adjustable Output Voltage
      4. 7.3.4  Enable (EN Pin) and UVLO
      5. 7.3.5  Internal LDO, VCC UVLO, and Bias Input
      6. 7.3.6  Soft Start and Voltage Tracking (SS/TRK)
      7. 7.3.7  Adjustable Switching Frequency (RT) and Frequency Synchronization
      8. 7.3.8  Minimum On-Time, Minimum Off-Time, and Frequency Foldback at Dropout Conditions
      9. 7.3.9  Bootstrap Voltage and VBOOT UVLO (BOOT Pin)
      10. 7.3.10 Power Good and Overvoltage Protection (PGOOD)
      11. 7.3.11 Overcurrent and Short-Circuit Protection
      12. 7.3.12 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown Mode
      2. 7.4.2 Standby Mode
      3. 7.4.3 Active Mode
      4. 7.4.4 CCM Mode
      5. 7.4.5 DCM Mode
      6. 7.4.6 Light Load Mode
      7. 7.4.7 Foldback Mode
      8. 7.4.8 Forced Pulse-Width-Modulation Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Custom Design With WEBENCH® Tools
        2. 8.2.2.2  Output Voltage Setpoint
        3. 8.2.2.3  Switching Frequency
        4. 8.2.2.4  Input Capacitors
        5. 8.2.2.5  Inductor Selection
        6. 8.2.2.6  Output Capacitor Selection
        7. 8.2.2.7  Feedforward Capacitor
        8. 8.2.2.8  Bootstrap Capacitors
        9. 8.2.2.9  VCC Capacitors
        10. 8.2.2.10 BIAS Capacitors
        11. 8.2.2.11 Soft-Start Capacitors
        12. 8.2.2.12 Undervoltage Lockout Setpoint
        13. 8.2.2.13 PGOOD
        14. 8.2.2.14 Synchronization
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Layout Highlights
      2. 10.1.2 Compact Layout for EMI Reduction
      3. 10.1.3 Ground Plane and Thermal Considerations
      4. 10.1.4 Feedback Resistors
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 Custom Design With WEBENCH® Tools
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Support Resources
  12. 12Mechanical, Packaging, and Orderable Information

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6.8 System Characteristics

The following specifications apply to the circuit found in the typical application schematic with appropriate modifications. These parameters are not tested in production and represent typical performance only. Unless otherwise stated the following conditions apply: TA = 25°C, VIN = 24 V, VOUT = 3.3 V, fSW = 400 kHz.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VFB_PFM Output voltage offset at no load in auto mode VIN = 3.8 V to 36 V, VSYNC = 0 V, auto mode IOUT = 0 A 2%
Vdrop Minimum input to output voltage differential to maintain specified accuracy VOUT = 5 V, IOUT = 1.5 A, fSW = 400 kHz 0.65 V
IQ_SW Operating quiescent current (switching) VEN = 3.3 V, IOUT = 0 A, RT = open, VBIAS = VOUT = 3.3 V, RFBT = 1 Meg 15 µA
IPEAK_MIN Minimum inductor peak current VSYNC = 0 V, IOUT = 10 mA 1 A
IBIAS_SW Operating quiescent current from external VBIAS (switching) fSW = 400 kHz, IOUT = 1 A 7 mA
DMAX Maximum switch duty cycle While in frequency foldback 97.5%
tDEAD Dead time between high-side and low-side MOSFETs 4 ns
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