ZHCSJE7A March   2019  – September 2019 LM76202-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化原理图
      2.      24V 条件下的 ISO16750-2 负载突降脉冲 5b 性能
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1      Absolute Maximum Ratings
    2. 6.2      ESD Ratings
    3. 6.3      Recommended Operating Conditions
    4. Table 1. Thermal Information
    5. 6.4      Electrical Characteristics
    6. 6.5      Timing Requirements
    7. 6.6      Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout (UVLO)
      2. 8.3.2 Overvoltage Protection (OVP)
      3. 8.3.3 Reverse Battery Protection
      4. 8.3.4 Hot Plug-In and In-Rush Current Control
      5. 8.3.5 Overload and Short Circuit Protection
        1. 8.3.5.1 Overload Protection
          1. 8.3.5.1.1 Active Current Limiting
          2. 8.3.5.1.2 Electronic Circuit Breaker with Overload Timeout, MODE = OPEN
        2. 8.3.5.2 Short Circuit Protection
          1. 8.3.5.2.1 Start-Up With Short-Circuit On Output
        3. 8.3.5.3 FAULT Response
          1. 8.3.5.3.1 Look Ahead Overload Current Fault Indicator
        4. 8.3.5.4 Current Monitoring
        5. 8.3.5.5 IN, OUT, RTN and GND Pins
        6. 8.3.5.6 Thermal Shutdown
        7. 8.3.5.7 Low Current Shutdown Control (SHDN)
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Step by Step Design Procedure
        2. 9.2.2.2 Setting Undervoltage Lockout and Overvoltage Set Point for Operating Voltage Range
        3. 9.2.2.3 Programming the Current-Limit Threshold—R(ILIM) Selection
        4. 9.2.2.4 Programming Current Monitoring Resistor—RIMON
        5. 9.2.2.5 Limiting the Inrush Current
          1. 9.2.2.5.1 Selection of Input TVS for Transient Protection
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Transient Protection
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档
    2. 12.2 接收文档更新通知
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 Glossary
  13. 13机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • PWP|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Timing Requirements

–40°C ≤ TA = TJ ≤ +125°C, V(IN) = 12 V, V(SHDN) = 2 V, R(ILIM) = 120 kΩ, IMON = FLT = OPEN, C(IN) = 0.1 μF, C(OUT) = 1 μF, C(dVdT) = OPEN.
(All voltages referenced to GND, (unless otherwise noted))
PARAMETER TEST CONDITIONS MIN NOM MAX UNIT
UVLO INPUT
UVLO Turn On Delay UVLO_tON(dly) UVLO↑ (100mV above V(UVLOR)) to V(OUT) = 100mV, C(dvdt) = Open 80 µs
UVLO_tON(dly) UVLO↑ (100mV above V(UVLOR)) to V(OUT) = 100mV, C(dvdt) ≥ 10 nF, [C(dvdt) in nF] 80+14.5 x C(dvdt)
UVLO Turn-Off delay UVLO_toff(dly) UVLO↓ (100mV below V(UVLOF)) to FLT ↓ 9 µs
SHUTDOWN INPUT
SHUTDOWN Exit delay SHDN_ton(dly) SHDN ↑ (above V(SHUTR) to V(OUT) = 100mV, C(dvdt) ≥ 10 nF, [C(dvdt) in nF] 350+14.5 x C(dvdt) µs
SHDN_ton(dly) SHDN ↑ (above V(SHUTR) to V(OUT) = 100mV, C(dvdt)= Open 355
SHUTDOWN Entry delay SHDN_toff(dly) SHDN ↓ (below V(SHUTF) to FLT ↓ 10 µs
OVP INPUT
OVP Exit delay tOVP(dly) OVP ↓(20mV below V(OVPF)) to V(OUT) = 100mV 205 µs
OVP Disable delay tOVP(dly) OVP↑ (20mV above V(OVPR)) to FLT ↓ 2 µs
OVP clamp delay tOVC(dly) V(IN) step from 24V to 60V in 50µs, Iload: 10mA, CL: 0.1uF.  OVP connected to RTN 3 µs
CURRENT LIMIT
Fast-Trip Comparator Delay tFASTTRIP(dly) I(OUT) = 1.5x I(FASTRIP) 170 ns
REVERSE CURRENT BLOCKING COMPARATOR
RCB comparator delay tREV(dly) (V(IN)-V(OUT)) ↓ (100mV overdrive below V(REVTH))  to internal FET OFF 1.29 µs
(V(IN)-V(OUT)) ↓ (10mV overdrive below V(REVTH)) to FLT ↓ 40 µs
tFWD(dly) (V(IN)-V(OUT)) ↑ (10mV overdrive above V(FWDTH)) to FLT ↑ 60 µs
THERMAL SHUTDOWN
Retry Delay in TSD tretry 540 ms
OUTPUT RAMP TIME
Output Ramp Time tdVdT SHDN↑ to V(OUT) = V(IN) 1.6 ms
SHDN↑ to V(OUT) = V(IN), with C(dVdT) = 47nF 10 ms
FAULT FLAG
FLT assertion delay in circuit breaker mode tCB(dly) MODE = OPEN,Delay from I(out)>I(lim) to FLT ↓(and internal FET turned off) 4 ms
Retry Delay in circuit breaker mode tCBretry(dly) MODE= OPEN,  C(dVdT) = Open. I(out)>I(lim). Delay from FLT ↓ to V(dVdT) = 50mV (Rising) 540 ms
PGOOD delay time tPGOODR Delay for rising FLT  edge 1.8 ms
tPGOODF Delay for falling FLT  edge 900 µs
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