SNOS975G May 2001 – August 2015 LM8262
PRODUCTION DATA.
6 Specifications
6.1 Absolute Maximum Ratings (1)(2)
over operating free-air temperature range (unless otherwise noted) (6)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| VIN Differential | +/−10 | V | ||
| Output Short Circuit Duration | See (3)(4) | |||
| Supply Voltage (V+ - V−) | 24 | V | ||
| Voltage at Input/Output pins | V+ +0.8, V− −0.8 | V | ||
| Junction Temperature (5) | +150 | °C | ||
| Storage temperature range, Tstg | −65 | +150 | °C | |
| Soldering Information: | Infrared or Convection (20 sec.) | 235 | °C | |
| Wave Soldering (10 sec.) | 260 | °C | ||
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Rating indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
(3) Applies to both single‐supply and split‐supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C.
(4) Output short circuit duration is infinite for VS ≤ 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
(5) The maximum power dissipation is a function of TJ(max), RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(max) - TA)/RθJA. All numbers apply for packages soldered directly onto a PC board.
(6) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge(1) | Human Body Model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(2) | ±2000 | V |
| Machine Model (MM)(3) | ±200 | |||
(1) Human Body Model, 1.5 kΩ in series with 100 pF. Machine Model, 0 Ω is series with 200 pF.
(2) JEDEC document JEP155 states that 2000-V HBM allows safe manufacturing with a standard ESD control process.
(3) JEDEC document JEP157 states that 200-V MM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Supply Voltage (V+ - V−) | 2.5 | 22 | V | |
| Operating Temperature Range(5) | −40 | +85 | °C | |
6.4 Thermal Information
| THERMAL METRIC(1) | DGK | UNIT | |
|---|---|---|---|
| 8 PINS | |||
| RθJA | Junction-to-ambient thermal resistance(2) | 235 | °C/W |
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The maximum power dissipation is a function of TJ(max),RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(max) - TA)/RθJA. All numbers apply for packages soldered directly onto a PC board.
6.5 2.7V Electrical Characteristics
Unless otherwise specified, all limits ensured for V+ = 2.7V, V− = 0V, VCM = 0.5V, VO = V+/2, and RL > 1MΩ to V−. Boldface limits apply at the temperature extremes.| PARAMETER | TEST CONDITIONS | MIN(2) | TYP(1) | MAX(2) | UNIT | |
|---|---|---|---|---|---|---|
| VOS | Input Offset Voltage | VCM = 0.5V & VCM = 2.2V | – | +/−0.7 | +/−5 +/−7 |
mV |
| TC VOS | Input Offset Average Drift | VCM = 0.5V & VCM = 2.2V (3) |
– | +/−2 | – | µV/C |
| IB | Input Bias Current | VCM = 0.5V (4) |
– | −1.20 | −2.00 −2.70 |
µA |
| VCM = 2.2V (4) |
– | +0.49 | +1.00 +1.60 |
|||
| IOS | Input Offset Current | VCM = 0.5V & VCM = 2.2V | – | 20 | 250 400 |
nA |
| CMRR | Common Mode Rejection Ratio | VCM stepped from 0V to 1.0V | 76 60 |
100 | – | dB |
| VCM stepped from 1.7V to 2.7V | – | 100 | – | |||
| VCM stepped from 0V to 2.7V | 58 50 |
70 | – | |||
| +PSRR | Positive Power Supply Rejection Ratio | V+ = 2.7V to 5V | 78 74 |
104 | – | dB |
| CMVR | Input Common-Mode Voltage Range | CMRR > 50dB | – | −0.3 | −0.1 0.0 |
V |
| 2.8 2.7 |
3.0 | – | V | |||
| AVOL | Large Signal Voltage Gain | VO = 0.5 to 2.2V, RL = 10k to V− |
70 67 |
78 | – | dB |
| VO = 0.5 to 2.2V, RL = 2k to V− |
67 63 |
73 | – | dB | ||
| VO | Output Swing High |
RL = 10k to V− | 2.49 2.46 |
2.59 | – | V |
| RL = 2k to V− | 2.45 2.41 |
2.53 | – | |||
| Output Swing Low |
RL = 10k to V− | – | 90 | 100 120 |
mV | |
| ISC | Output Short Circuit Current | Sourcing to V−
VID = 200mV (5)(6) |
30 20 |
48 | – | mA |
| Sinking to V+
VID = −200mV (5)(6) |
50 30 |
65 | – | |||
| IS | Supply Current (both amps) | No load, VCM = 0.5V | – | 2.0 | 2.5 3.0 |
mA |
| SR | Slew Rate (7) | AV = +1,VI = 2VPP | – | 9 | – | V/µs |
| fu | Unity Gain-Frequency | VI = 10mV, RL = 2kΩ to V+/2 | – | 10 | – | MHz |
| GBWP | Gain Bandwidth Product | f = 50KHz | 15.5 14 |
21 | – | MHz |
| Phim | Phase Margin | VI = 10mV | – | 50 | – | Deg |
| en | Input-Referred Voltage Noise | f = 2KHz, RS = 50Ω | – | 15 | – | nV/ √Hz |
| in | Input-Referred Current Noise | f = 2KHz | – | 1 | – | pA/ √Hz |
| fmax | Full Power Bandwidth | ZL = (20pF || 10kΩ) to V+/2 | – | 1 | – | MHz |
(1) Typical Values represent the most likely parametric norm.
(2) All limits are ensured by testing or statistical analysis.
(3) Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
(4) Positive current corresponds to current flowing into the device.
(5) Short circuit test is a momentary test.
(6) Output short circuit duration is infinite for VS ≤ 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
(7) Slew rate is the slower of the rising and falling slew rates. Connected as a Voltage Follower.
6.6 5V Electrical Characteristics
Unless otherwise specified, all limits ensured for V+ = 5V, V− = 0V, VCM = 1V, VO = V+/2, and RL > 1MΩ to V−. Boldface limits apply at the temperature extremes.| PARAMETER | TEST CONDITIONS | MIN(2) | TYP(1) | MAX(2) | UNIT | |
|---|---|---|---|---|---|---|
| VOS | Input Offset Voltage | VCM = 1V & VCM = 4.5V | – | +/−0.7 | +/−5 +/− 7 |
mV |
| TC VOS | Input Offset Average Drift | VCM = 1V & VCM = 4.5V (3) |
– | +/−2 | – | µV/°C |
| IB | Input Bias Current | VCM = 1V (4) |
– | −1.18 | −2.00 −2.70 |
µA |
| VCM = 4.5V (4) |
– | +0.49 | +1.00 +1.60 |
|||
| IOS | Input Offset Current | VCM = 1V & VCM = 4.5V | – | 20 | 250 400 |
nA |
| CMRR | Common Mode Rejection Ratio | VCM stepped from 0V to 3.3V | 84 72 |
110 | – | dB |
| VCM stepped from 4V to 5V | – | 100 | – | |||
| VCM stepped from 0V to 5V | 64 61 |
80 | – | |||
| +PSRR | Positive Power Supply Rejection Ratio | V+ = 2.7V to 5V, VCM = 0.5V | 78 74 |
104 | – | dB |
| CMVR | Input Common-Mode Voltage Range | CMRR > 50dB | – | −0.3 | −0.1 0.0 |
V |
| 5.1 5.0 |
5.3 | – | V | |||
| AVOL | Large Signal Voltage Gain | VO = 0.5 to 4.5V, RL = 10k to V− |
74 70 |
84 | – | dB |
| VO = 0.5 to 4.5V, RL = 2k to V− |
70 66 |
80 | – | |||
| VO | Output Swing High |
RL = 10k to V− | 4.75 4.72 |
4.87 | – | V |
| RL = 2k to V− | 4.70 4.66 |
4.81 | – | |||
| Output Swing Low |
RL = 10k to V− | – | 86 | 125 135 |
mV | |
| ISC | Output Short Circuit Current | Sourcing to V−
VID = 200mV (5)(6) |
35 20 |
53 | – | mA |
| Sinking to V+
VID = −200mV (5)(6) |
60 50 |
75 | – | |||
| IS | Supply Current (both amps) | No load, VCM = 1V | – | 2.3 | 2.8 3.5 |
mA |
| SR | Slew Rate (7) | AV = +1, VI = 5VPP | 10 7 |
12 | – | V/µs |
| fu | Unity Gain Frequency | VI = 10mV, RL = 2kΩ to V+/2 |
– | 10.5 | – | MHz |
| GBWP | Gain-Bandwidth Product | f = 50KHz | 16 15 |
21 | – | MHz |
| Phim | Phase Margin | VI = 10mV | – | 53 | – | Deg |
| en | Input-Referred Voltage Noise | f = 2KHz, RS = 50Ω | – | 15 | – | nV/ √Hz |
| in | Input-Referred Current Noise | f = 2KHz | – | 1 | – | pA/ √Hz |
| fmax | Full Power Bandwidth | ZL = (20pF || 10kΩ) to V+/2 | – | 900 | – | KHz |
| tS | Settling Time (+/−5%) | 100mVPP Step, 500pF load | – | 400 | – | ns |
| THD+N | Total Harmonic Distortion + Noise | RL = 1kΩ to V+/2 f = 10KHz to AV= +2, 4VPP swing |
– | 0.05% | – |
(1) Typical Values represent the most likely parametric norm.
(2) All limits are ensured by testing or statistical analysis.
(3) Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
(4) Positive current corresponds to current flowing into the device.
(5) Short circuit test is a momentary test.
(6) Output short circuit duration is infinite for VS ≤ 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
(7) Slew rate is the slower of the rising and falling slew rates. Connected as a Voltage Follower.
6.7 +/−11V Electrical Characteristics
Unless otherwise specified, all limits ensured for V+ = 11V, V− = −11V, VCM = 0V, VO = 0V, and RL > 1MΩ to 0V. Boldface limits apply at the temperature extremes.| PARAMETER | TEST CONDITIONS | MIN(2) | TYP(1) | MAX(2) | UNIT | |
|---|---|---|---|---|---|---|
| VOS | Input Offset Voltage | VCM = −10.5V & VCM = 10.5V | – | +/−0.7 | +/−7 +/− 9 |
mV |
| TC VOS | Input Offset Average Drift | VCM = −10.5V & VCM = 10.5V (7) |
– | +/−2 | – | µV/°C |
| IB | Input Bias Current | VCM = −10.5V (3) |
– | −1.05 | −2.00 −2.80 |
µA |
| VCM = 10.5V (3) |
– | +0.49 | +1.00 +1.50 |
|||
| IOS | Input Offset Current | VCM = −10.5V & VCM = 10.5V | – | 30 | 275 550 |
nA |
| CMRR | Common Mode Rejection Ratio | VCM stepped from −11V to 9V | 84 80 |
100 | – | dB |
| VCM stepped from 10V to 11V | – | 100 | – | |||
| VCM stepped from −11V to 11V | 74 72 |
88 | – | |||
| +PSRR | Positive Power Supply Rejection Ratio | V+ = 9V to 11V | 70 66 |
100 | – | dB |
| −PSRR | Negative Power Supply Rejection Ratio | V− = −9V to −11V | 70 66 |
100 | – | dB |
| CMVR | Input Common-Mode Voltage Range | CMRR > 50dB | – | −11.3 | −11.1 −11.0 |
V |
| 11.1 11.0 |
11.3 | – | V | |||
| AVOL | Large Signal Voltage Gain | VO = 0V to +/−9V, RL = 10kΩ |
78 74 |
85 | – | dB |
| VO = 0V to +/−9V, RL = 2kΩ |
72 66 |
79 | – | |||
| VO | Output Swing High |
RL = 10kΩ | 10.65 10.61 |
10.77 | – | V |
| RL = 2kΩ | 10.6 10.55 |
10.69 | – | |||
| Output Swing Low |
RL = 10kΩ | – | −10.98 | −10.75 −10.65 |
V | |
| RL = 2kΩ | – | −10.91 | −10.65 −10.6 |
|||
| ISC | Output Short Circuit Current | Sourcing to ground VID = 200mV (5)(6) |
40 25 |
60 | – | mA |
| Sinking to ground VID = 200mV (5)(6) |
65 55 |
100 | – | |||
| IS | Supply Current | No load, VCM = 0V | – | 2.5 | 4 5 |
mA |
| SR | Slew Rate (4) |
AV = +1, VI = 16VPP | 10 8 |
15 | – | V/µs |
| fU | Unity Gain Frequency | VI = 10mV, RL = 2kΩ | – | 13 | – | MHz |
| GBWP | Gain-Bandwidth Product | f = 50KHz | 18 16 |
24 | – | MHz |
| Phim | Phase Margin | VI = 10mV | – | 58 | – | Deg |
| en | Input-Referred Voltage Noise | f = 2KHz, RS = 50Ω | – | 15 | – | nV/ √Hz |
| in | Input-Referred Current Noise | f = 2KHz | – | 1 | – | pA/ √Hz |
| tS | Settling Time (+/−1%, AV = +1) | Positive Step, 5VPP | – | 320 | – | ns |
| Negative Step, 5VPP | – | 600 | – | |||
| THD+N | Total Harmonic Distortion +Noise | RL = 1kΩ, f = 10KHz, AV = +2, 15VPP swing |
– | 0.01% | – | |
| CTREJ | Cross-Talk Rejection | f = 5MHz, Driver RL = 10kΩ |
– | 68 | – | dB |
(1) Typical Values represent the most likely parametric norm.
(2) All limits are ensured by testing or statistical analysis.
(3) Positive current corresponds to current flowing into the device.
(4) Slew rate is the slower of the rising and falling slew rates. Connected as a Voltage Follower.
(5) Short circuit test is a momentary test.
(6) Output short circuit duration is infinite for VS ≤ 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
(7) Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
6.8 Typical Performance Characteristics
TA = 25°C, Unless Otherwise Noted
