The LMG1205 is a high frequency high- and low- side gate driver for enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The LMG1205 has split-gate outputs with strong sink capability, providing flexibility to adjust the turnon and turnoff strength independently.

The LMG1205 can operate up to several MHz, and is available in a 12-pin DSBGA package that offers a compact footprint and minimized package inductance.