Section 7.2 shows the LMG2100R026, half-bridge, GaN power stage with highly integrated high-side and low-side gate drivers, which includes built-in UVLO protection circuitry and an overvoltage clamp circuitry. The clamp circuitry limits the bootstrap refresh operation to ensure that the high-side gate driver overdrive does not exceed 5.4V. The device integrates two GaN FETs in a half-bridge configuration. The device can be used in many isolated and non-isolated topologies allowing very simple integration. The package is designed to minimize the loop inductance while keeping the PCB design simple. The drive strengths for turnon and turnoff are optimized to ensure high voltage slew rates without causing any excessive ringing on the gate or power loop.