SNOSDJ1A July   2024  – October 2024 LMG2100R026

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay and Mismatch Measurement
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Control Inputs
      2. 7.3.2 Start-Up and UVLO
      3. 7.3.3 Bootstrap Supply Voltage Clamping
      4. 7.3.4 Level Shift
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VCC Bypass Capacitor
        2. 8.2.2.2 Bootstrap Capacitor
        3. 8.2.2.3 Slew Rate Control
        4. 8.2.2.4 Power Dissipation
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Package Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • VBN|18
  • VBN|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.3.2 Start-Up and UVLO

The LMG2100R026 has an UVLO on both the VCC and HB (bootstrap) supplies. When the VCC voltage is below the threshold voltage of 3.8V, both the HI and LI inputs are ignored, to prevent the GaN FETs from being partially turned on. Also, if there is insufficient VCC voltage, the UVLO actively pulls the high- and low-side GaN FET gates low. When the HB to HS bootstrap voltage is below the UVLO threshold of 3.2V, only the high-side GaN FET gate is pulled low. Both UVLO threshold voltages have 200mV of hysteresis to avoid chattering.

Table 7-1 VCC UVLO Feature Logic Operation
CONDITION (VHB – VHS > VHBR)HILISW
VCC – VAGND < VCCR during device start-upHLHi-Z
VCC – VAGND < VCCR during device start-upLHHi-Z
VCC – VAGND < VCCR during device start-upHHHi-Z
VCC – VAGND < VCCR during device start-upLLHi-Z
VCC – VAGND < VCCF after device start-upHLHi-Z
VCC – VAGND < VCCF after device start-upLHHi-Z
VCC – VAGND < VCCF after device start-upHHHi-Z
VCC – VAGND < VCCF after device start-upLLHi-Z
Table 7-2 VHB-HS UVLO Feature Logic Operation
CONDITION (VCC > VCCR)HILISW
VHB – VHS < VHBR during device start-upHLHi-Z
VHB – VHS < VHBR during device start-upLHPGND
VVHB – VHS < VHBR during device start-upHHPGND
VHB – VHS < VHBR during device start-upLLHi-Z
VHB – VHS < VHBF after device start-upHLHi-Z
VHB – VHS < VHBF after device start-upLHPGND
VHB – VHS < VHBF after device start-upHHPGND
VHB – VHS < VHBF after device start-upLLHi-Z
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