The slew rate of LMG342xR030 can be adjusted between approximately 20 V/ns and 150 V/ns by connecting a resistor, R_DRV, from the RDRV pin to GND. The slew rate affects GaN device performance in terms of:

• Switching loss
• Voltage overshoot
• Noise coupling
• EMI emission

Generally, high slew rates provide low switching loss, but high slew rates can also create higher voltage overshoot, noise coupling, and EMI emissions. Following the design recommendations in this data sheet helps mitigate the challenges caused by a high slew rate. The LMG342xR030 offers circuit designers the flexibility to select the proper slew rate for the best performance of their applications.