ZHCSNN4B October 2020 – May 2022 LMG3422R050 , LMG3425R050
PRODUCTION DATA
- 1 特性
- 2 应用
- 3 说明
- 4 Revision History
- 5 Device Comparison
- 6 Pin Configuration and Functions
- 7 Specifications
- 8 Parameter Measurement Information
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9 Detailed Description
- 9.1 Overview
- 9.2 Functional Block Diagram
- 9.3
Feature Description
- 9.3.1 GaN FET Operation Definitions
- 9.3.2 Direct-Drive GaN Architecture
- 9.3.3 Drain-Source Voltage Capability
- 9.3.4 Internal Buck-Boost DC-DC Converter
- 9.3.5 VDD Bias Supply
- 9.3.6 Auxiliary LDO
- 9.3.7 Fault Detection
- 9.3.8 Drive Strength Adjustment
- 9.3.9 Temperature-Sensing Output
- 9.3.10 Ideal-Diode Mode Operation
- 9.4 Start Up Sequence
- 9.5 Safe Operation Area (SOA)
- 9.6 Device Functional Modes
- 10Application and Implementation
- 11Power Supply Recommendations
- 12Layout
- 13Device and Documentation Support
- 14Mechanical, Packaging, and Orderable Information
13.5 Electrostatic Discharge Caution
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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. |
| ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. |