ZHCSNN4B
October 2020 – May 2022
LMG3422R050
,
LMG3425R050
PRODUCTION DATA
1
特性
2
应用
3
说明
4
Revision History
5
Device Comparison
6
Pin Configuration and Functions
7
Specifications
7.1
Absolute Maximum Ratings
7.2
ESD Ratings
7.3
Recommended Operating Conditions
7.4
Thermal Information
7.5
Electrical Characteristics
7.6
Switching Characteristics
7.7
Typical Characteristics
8
Parameter Measurement Information
8.1
Switching Parameters
8.1.1
Turn-On Times
8.1.2
Turn-Off Times
8.1.3
Drain-Source Turn-On Slew Rate
8.1.4
Turn-On and Turn-Off Switching Energy
9
Detailed Description
9.1
Overview
9.2
Functional Block Diagram
9.3
Feature Description
9.3.1
GaN FET Operation Definitions
9.3.2
Direct-Drive GaN Architecture
9.3.3
Drain-Source Voltage Capability
9.3.4
Internal Buck-Boost DC-DC Converter
9.3.5
VDD Bias Supply
9.3.6
Auxiliary LDO
9.3.7
Fault Detection
9.3.7.1
Overcurrent Protection and Short-Circuit Protection
9.3.7.2
Overtemperature Shutdown
9.3.7.3
UVLO Protection
9.3.7.4
Fault Reporting
9.3.8
Drive Strength Adjustment
9.3.9
Temperature-Sensing Output
9.3.10
Ideal-Diode Mode Operation
9.4
Start Up Sequence
9.5
Safe Operation Area (SOA)
9.5.1
Safe Operation Area (SOA) - Repetitive SOA
9.6
Device Functional Modes
10
Application and Implementation
10.1
Application Information
10.2
Typical Application
10.2.1
Design Requirements
10.2.2
Detailed Design Procedure
10.2.2.1
Slew Rate Selection
10.2.2.1.1
Start-Up and Slew Rate With Bootstrap High-Side Supply
10.2.2.2
Signal Level-Shifting
10.2.2.3
Buck-Boost Converter Design
10.2.3
Application Curves
10.3
Do's and Don'ts
11
Power Supply Recommendations
11.1
Using an Isolated Power Supply
11.2
Using a Bootstrap Diode
11.2.1
Diode Selection
11.2.2
Managing the Bootstrap Voltage
12
Layout
12.1
Layout Guidelines
12.1.1
Solder-Joint Reliability
12.1.2
Power-Loop Inductance
12.1.3
Signal-Ground Connection
12.1.4
Bypass Capacitors
12.1.5
Switch-Node Capacitance
12.1.6
Signal Integrity
12.1.7
High-Voltage Spacing
12.1.8
Thermal Recommendations
12.2
Layout Examples
13
Device and Documentation Support
13.1
Documentation Support
13.1.1
Related Documentation
13.2
接收文档更新通知
13.3
支持资源
13.4
Trademarks
13.5
Electrostatic Discharge Caution
13.6
Export Control Notice
13.7
术语表
14
Mechanical, Packaging, and Orderable Information
封装选项
机械数据 (封装 | 引脚)
RQZ|54
散热焊盘机械数据 (封装 | 引脚)
订购信息
zhcsnn4b_oa
zhcsnn4b_pm
1
特性
符合面向硬开关拓扑的 JEDEC JEP180 标准
带集成栅极驱动器的
600
-V GaN-on-Si FET
集成高精度栅极偏置电压
200V/ns CMTI
3.6
MHz 开关频率
20V/ns 至 150V/ns 压摆率,用于优化开关性能和缓解 EMI
在 7.5V 至 18V 电源下工作
强大的保护
响应时间少于 100 ns 的逐周期过流和锁存短路保护
硬开关时可承受 720V 浪涌
针对内部过热和 UVLO 监控的自我保护
高级电源管理
数字温度 PWM 输出
理想二极管模式可减少
LMG3425R050
中的第三象限损耗
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP
|
米乐app下载官网(中国)|ios|Android/通用版APP最新版
|
米乐|米乐·M6(中国大陆)官方网站
|
千亿体育登陆地址
|
华体会体育(中国)HTH·官方网站
|
千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载
|
18新利网v1.2.5|中国官方网站
|
bob电竞真人(中国官网)安卓/ios苹果/电脑版【1.97.95版下载】
|
千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装
|