ZHCSNN4B October   2020  – May 2022 LMG3422R050 , LMG3425R050

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Switching Parameters
      1. 8.1.1 Turn-On Times
      2. 8.1.2 Turn-Off Times
      3. 8.1.3 Drain-Source Turn-On Slew Rate
      4. 8.1.4 Turn-On and Turn-Off Switching Energy
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  GaN FET Operation Definitions
      2. 9.3.2  Direct-Drive GaN Architecture
      3. 9.3.3  Drain-Source Voltage Capability
      4. 9.3.4  Internal Buck-Boost DC-DC Converter
      5. 9.3.5  VDD Bias Supply
      6. 9.3.6  Auxiliary LDO
      7. 9.3.7  Fault Detection
        1. 9.3.7.1 Overcurrent Protection and Short-Circuit Protection
        2. 9.3.7.2 Overtemperature Shutdown
        3. 9.3.7.3 UVLO Protection
        4. 9.3.7.4 Fault Reporting
      8. 9.3.8  Drive Strength Adjustment
      9. 9.3.9  Temperature-Sensing Output
      10. 9.3.10 Ideal-Diode Mode Operation
    4. 9.4 Start Up Sequence
    5. 9.5 Safe Operation Area (SOA)
      1. 9.5.1 Safe Operation Area (SOA) - Repetitive SOA
    6. 9.6 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Slew Rate Selection
          1. 10.2.2.1.1 Start-Up and Slew Rate With Bootstrap High-Side Supply
        2. 10.2.2.2 Signal Level-Shifting
        3. 10.2.2.3 Buck-Boost Converter Design
      3. 10.2.3 Application Curves
    3. 10.3 Do's and Don'ts
  11. 11Power Supply Recommendations
    1. 11.1 Using an Isolated Power Supply
    2. 11.2 Using a Bootstrap Diode
      1. 11.2.1 Diode Selection
      2. 11.2.2 Managing the Bootstrap Voltage
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Solder-Joint Reliability
      2. 12.1.2 Power-Loop Inductance
      3. 12.1.3 Signal-Ground Connection
      4. 12.1.4 Bypass Capacitors
      5. 12.1.5 Switch-Node Capacitance
      6. 12.1.6 Signal Integrity
      7. 12.1.7 High-Voltage Spacing
      8. 12.1.8 Thermal Recommendations
    2. 12.2 Layout Examples
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 接收文档更新通知
    3. 13.3 支持资源
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Export Control Notice
    7. 13.7 术语表
  14. 14Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
  • RQZ|54
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.4 Thermal Information

THERMAL METRIC(1) LMG342xR050 UNIT
RQZ (VQFN)
54 PINS
RθJC(bot,avg) Junction-to-case (bottom) average thermal resistance 0.88 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
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