The allowed repetitive SOA for the LMG3522R030 (Figure 6-11) is defined by the peak drain current (I_DS) and the drain to source voltage (V_DS) of the device during turn on. The peak drain current during switching is the sum of several currents going into drain terminal: the inductor current (I_ind); the current required to charge the C_OSS of the other GaN device in the totem pole; and the current required to charge the parasitic capacitance (C_par) on the switching node. 310 pF is used as an average C_OSS of the device during switching. The parasitic capacitance on the switch node may be estimated by using the overlap capacitance of the PCB. A boost topology is used for the SOA testing. The circuit shown in Figure 8-8 is used to generate the SOA curve in Figure 6-11. For reliable operation, the junction temperature of the device must also be limited to 125 °C. The I_DS of Figure 6-11 can be calculated by:

where drain slew rate at the peak current is estimated between 70 percent and 30 percent of the bus voltage, and C_par is the parasitic board capacitance at the switched node.

Refer to Achieving GaN Products With Lifetime Reliability for more details.