ZHCSRV6A march   2023  – april 2023 LMG3526R030

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Switching Parameters
      1. 7.1.1 Turn-On Times
      2. 7.1.2 Turn-Off Times
      3. 7.1.3 Drain-Source Turn-On Slew Rate
      4. 7.1.4 Zero-Voltage Detection Times
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  GaN FET Operation Definitions
      2. 8.3.2  Direct-Drive GaN Architecture
      3. 8.3.3  Drain-Source Voltage Capability
      4. 8.3.4  Internal Buck-Boost DC-DC Converter
      5. 8.3.5  VDD Bias Supply
      6. 8.3.6  Auxiliary LDO
      7. 8.3.7  Fault Detection
        1. 8.3.7.1 Overcurrent Protection and Short-Circuit Protection
        2. 8.3.7.2 Overtemperature Shutdown
        3. 8.3.7.3 UVLO Protection
        4. 8.3.7.4 Fault Reporting
      8. 8.3.8  Drive-Strength Adjustment
      9. 8.3.9  Temperature-Sensing Output
      10. 8.3.10 Ideal-Diode Mode Operation
        1. 8.3.10.1 Overtemperature-Shutdown Ideal-Diode Mode
      11. 8.3.11 Zero-Voltage Detection (ZVD)
    4. 8.4 Start-Up Sequence
    5. 8.5 Safe Operation Area (SOA)
      1. 8.5.1 Repetitive SOA
    6. 8.6 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Slew Rate Selection
          1. 9.2.2.1.1 Start-Up and Slew Rate With Bootstrap High-Side Supply
        2. 9.2.2.2 Signal Level-Shifting
        3. 9.2.2.3 Buck-Boost Converter Design
      3. 9.2.3 Application Curves
    3. 9.3 Do's and Don'ts
    4. 9.4 Power Supply Recommendations
      1. 9.4.1 Using an Isolated Power Supply
      2. 9.4.2 Using a Bootstrap Diode
        1. 9.4.2.1 Diode Selection
        2. 9.4.2.2 Managing the Bootstrap Voltage
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
        1. 9.5.1.1 Solder-Joint Reliability
        2. 9.5.1.2 Power-Loop Inductance
        3. 9.5.1.3 Signal-Ground Connection
        4. 9.5.1.4 Bypass Capacitors
        5. 9.5.1.5 Switch-Node Capacitance
        6. 9.5.1.6 Signal Integrity
        7. 9.5.1.7 High-Voltage Spacing
        8. 9.5.1.8 Thermal Recommendations
      2. 9.5.2 Layout Examples
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 Export Control Notice
    7. 10.7 术语表
  12. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.1 Absolute Maximum Ratings

Unless otherwise noted: voltages are in respect to SOURCE connected to reference ground(1)
MIN MAX UNIT
VDS Drain-source voltage, FET off 650 V
VDS(surge) Drain-source voltage, FET switching, surge condition(2) 720 V
VDS,tr Drain-source transient ringing peak voltage, FET off, surge condition(2)(3) 800 V
Pin voltage VDD -0.3 20 V
LDO5V -0.3 5.5 V
VNEG -16 0.5 V
BBSW VVNEG–1 VVDD+0.5 V
IN -0.3 20 V
FAULT, OC, TEMP -0.3 VLDO5V+0.3 V
RDRV -0.3 5.5 V
ID(RMS) Drain RMS current, FET on 55 A
ID(pulse) Drain pulsed current, FET on, tp < 10 µs(4) -125 Internally Limited A
IS(pulse) Source pulsed current, FET off, tp < 1 µs 80 A
TJ Operating junction temperature(5) -40 150 °C
TSTG Storage temperature -55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) See Drain-Source Voltage Capability section for an explanation of the switching cycle drain-source voltage ratings.
(3) t1 < 200 ns in Figure 8-1.
(4) The positive pulsed current must remain below the overcurrent threshold to avoid the FET being automatically shut off. The FET drain intrinsic positive pulsed current rating for tp < 10 µs is 120 A.
(5) Refer to the Electrical and Switching Characteristics Tables for junction temperature test conditions.
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