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SNLS285H April 2008 – May 2016 LMH0303

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

RUM|16
- MPQF223A

散热焊盘机械数据 (封装 | 引脚)

RUM|16
- QFND453A

订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

	MIN	MAX	UNIT
Supply voltage	–0.5	3.6	V
Input voltage (all inputs)	–0.3	V_CC + 0.3	V
Output current		28	mA
Lead temperature (soldering, 4 s)		260	°C
Junction temperature		125	°C
Storage temperature, T_stg	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±8000	V
		Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±2000
		Machine model (MM)	±400

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as
±8000 V may actually have higher performance.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as
±2000 V may actually have higher performance.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

	MIN	NOM	MAX	UNIT
Supply voltage (V_CC – V_EE)	3.13	3.3	3.46	V
Operating junction temperature			100	°C
Operating free air temperature, T_A	–40	25	85	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		LMH0303	UNIT
		RUM (WQFN)
		16 PINS
R_θJA	Junction-to-ambient thermal resistance	40.7	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	39.5	°C/W
R_θJB	Junction-to-board thermal resistance	18.5	°C/W
ψ_JT	Junction-to-top characterization parameter	0.6	°C/W
ψ_JB	Junction-to-board characterization parameter	18.5	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	8	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics – DC

Over supply voltage and operating temperature ranges (unless otherwise noted)⁽¹⁾⁽²⁾

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_CMIN	Input common mode voltage	SDI, SDI	1.6 + V_SDI/2		V_CC – V_SDI/2	V
V_SDI	Input voltage swing	Differential (SDI, SDI)	100		2200	mV_P−P
V_CMOUT	Output common mode voltage	SDO, SDO		V_CC – V_SDO		V
V_SDO	Output voltage swing (SDO, SDO)	Single-ended, 75-Ω load, R_REF = 750 Ω 1%	720	800	880	mV_P-P
V_IH	Input voltage high level	SD/HD, ENABLE	2			V
V_IL	Input voltage low level	SD/HD, ENABLE			0.8	V
I_CC	Supply current	SD/HD = 0, SDO/SDO enabled		47	57	mA
		SD/HD = 1, SDO/SDO enabled		40	47
		SDO/SDO disabled		1.3	2.5
SMBUS DC SPECIFICATIONS
V_SIL	Data, clock input low voltage				0.8	V
V_SIH	Data, clock input high voltage		2.1		V_SDD	V
I_SPULLUP	Current through pullup resistor or current source	V_OL = 0.4 V	4			mA
V_SDD	Nominal bus voltage		3		3.6	V
I_SLEAKB	Input leakage per bus segment⁽³⁾		–200		200	µA
I_SLEAKP	Input leakage per pin		–10		10	µA
C_SI	Capacitance for SDA and SCL⁽³⁾⁽⁴⁾				10	pF

(1) Current flow into device pins is defined as positive. Current flow out of device pins is defined as negative. All voltages are stated referenced to V_EE = 0 V.

(2) Typical values are stated for V_CC = 3.3 V and T_A = 25°C.

(3) Recommended value — Parameter not tested.

(4) Recommended maximum capacitive load per bus segment is 400 pF.

6.6 Electrical Characteristics – AC

Over supply voltage and operating temperature ranges (unless otherwise noted)⁽¹⁾

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
DR_SDI	Input data rate				2970	Mbps
T_jit	Additive output jitter	2.97 Gbps		20		ps_P-P
		1.485 Gbps		18
		270 Mbps		15
t_r,t_f	Output rise time and fall time	SD/HD = 0, 20% to 80%		90	130	ps
t_r,t_f	Output rise time and fall time	SD/HD = 1, 20% to 80%	400		800	ps
T_MATCH	Mismatch in rise or fall time	SD/HD = 0			30	ps
T_MATCH	Mismatch in rise or fall time	SD/HD = 1			50	ps
T_DCD	Duty cycle distortion	SD/HD = 0, 2.97 Gbps⁽²⁾			27	ps
		SD/HD = 0, 1.485 Gbps⁽²⁾			30
		SD/HD = 1⁽²⁾			100
T_OS	Output overshoot	SD/HD = 0⁽²⁾			10%
T_OS	Output overshoot	SD/HD = 1⁽²⁾			8%
RL_SDO	Output return loss	5 MHz to 1.5 GHz⁽³⁾	15			dB
RL_SDO	Output return loss	1.5 GHz to 3 GHz⁽³⁾	10			dB

(1) Typical values are stated for V_CC = 3.3 V and T_A = 25°C.

(2) Specification is ensured by characterization.

(3) Output return loss is dependent on board design. The LMH0303 meets this specification on the SD303EVK evaluation board.

6.7 Timing Requirements

		MIN	MAX	UNIT
f_SMB	Bus operating frequency	10	100	kHz
t_BUF	Bus free time between stop and start condition	4.7		µs
t_HD:STA	Hold time after (repeated) start condition. After this period, the first clock is generated; at I_SPULLUP = MAX	4		µs
t_SU:STA	Repeated start condition setup time	4.7		µs
t_SU:STO	Stop condition setup time	4		µs
t_HD:DAT	Data hold time	300		ns
t_SU:DAT	Data setup time	250		ns
t_LOW	Clock low period	4.7		µs
t_HIGH	Clock high period	4	50	µs
t_F	Clock or data fall time		300	ns
t_R	Clock or data rise time		1000	ns
t_POR	Time in which device must be operational after power on		500	ms

Figure 1. SMBus Timing Parameters

6.8 Typical Characteristics

Typical device characteristics at T_A = 25°C and V_CC = 3.3 V (unless otherwise noted)

Figure 2. SDO PRBS10 at 2.97 Gbps

Figure 3. SDO PRBS10 at 1.485 Gbps