米6体育平台手机版

ZHCSS23A april 2023 – august 2023 LMH32401-Q1

PRODUCTION DATA

封装选项

机械数据 (封装 | 引脚)

RGT|16
- MPQF119H

散热焊盘机械数据 (封装 | 引脚)

RGT|16
- QFND778

订购信息

6.6 Electrical Characteristics: Gain = 20 kΩ

at V_DD = 3.3 V, V_OCM = open, V_OD = 0 V, C_PD⁽¹⁾ = 1 pF, EN = 0 V, V_GAIN = 3.3 V, IDC_EN = 3.3 V, R_L = 100 Ω, and T_A = 25℃ (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
AC PERFORMANCE
SSBW	Small-signal bandwidth	V_OUT = 100 mV_PP		275		MHz
LSBW	Large-signal bandwidth	V_OUT = 1 V_PP		275		MHz
t_R, t_F	Rise and fall time	V_OUT = 100 mV_PP, pulse duration = 10 ns		1.3		ns
	Slew rate⁽²⁾	V_OUT = 1 V_PP, pulse duration = 10 ns		700		V/µs
	Overload pulse extension⁽³⁾	I_IN = 10 mA, pulse duration = 10 ns		4		ns
i_N	Integrated input current noise	f = 250 MHz		49		nA_RMS
DC PERFORMANCE
Z₂₁	Small-signal transimpedance gain⁽⁴⁾		17	20	22.5	kΩ
V_OD	Differential output offset voltage (V_OUT– – V_OUT+)		–20	5	20	mV
ΔV_OD/ΔT_A	Differential output offset voltage drift			±17.5		µV/°C
INPUT PERFORMANCE
R_IN	Input resistance		270	350	410	Ω
V_IN	Default input bias voltage	Input pin floating	2.42	2.47	2.52	V
ΔV_IN/ΔT_A	Default input bias voltage drift	Input pin floating		1.1		mV/°C
I_{IN_LIN}	DC input current range	Z₂₁ < 3-dB degradation from I_IN = 5 µA	60	72		µA

(1) Input capacitance of photodiode.

(2) Average of rising and falling slew rate.

(3) Pulse duration extension measured at 50% of pulse height of a square wave.

(4) Gain measured at the amplifier output pins when driving a 100-Ω resistive load. At higher resistor loads, the gain increases.