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SNOSB30P October 2008 – January 2015 LMH6554

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

NHJ|14
- MPQF310

散热焊盘机械数据 (封装 | 引脚)

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7 Specifications

7.1 Absolute Maximum Ratings ⁽¹⁾⁽²⁾⁽⁴⁾

	MIN	MAX	UNIT
Supply Voltage (V_S = V⁺ - V⁻)		5.5	V
Common Mode Input Voltage	V^-	V⁺	V
Maximum Operating Junction Temperature		150	°C
Maximum Input Current		30	mA
Maximum Output Current (pins 12, 13)	⁽³⁾		mA
Soldering Information		260	°C
Infrared or Convection (30 sec)		260	°C
Storage Temperature, T_stg	−65	150	°C

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications, see the Electrical Characteristics: +5 V tables.

(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications.

(3) The maximum output current (I_OUT) is determined by device power dissipation limitations. See Power Dissipation for more details.

(4) For soldering specifications, see SNOA549.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
		Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±750
		Machine model (MM)	±250

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

See ⁽¹⁾

	MIN	NOM	MAX	UNIT
Operating Temperature Range	−40		+125	°C
Total Supply Voltage Temperature Range	4.7		5.25	V

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		LMH6554	UNIT
		NHJ
		14 PINS
R_θJA	Junction-to-ambient thermal resistance	60	°C/W

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics: +5 V

Unless otherwise specified, all limits are ensured for T_A = +25°C, A_V = +2, V⁺ = +2.5 V, V− = −2.5 V, R_L = 200 Ω, V_CM = (V⁺+V^-)/2, R_F = 200 Ω, for single-ended in, differential out.⁽¹⁾

PARAMETER		TEST CONDITIONS		MIN ⁽⁴⁾	TYP ⁽³⁾	MAX ⁽⁴⁾	UNIT
AC PERFORMANCE (DIFFERENTIAL)
SSBW	Small Signal −3 dB Bandwidth ⁽⁴⁾	A_V = 1, V_OUT = 0.2 V_PP			2800		MHz
		A_V = 2, V_OUT = 0.2 V_PP			2500
		A_V = 4, V_OUT = 0.2 V_PP			1600
LSBW	Large Signal Bandwidth	A_V = 1, V_OUT = 2 V_PP			1800		MHz
		A_V = 2, V_OUT = 2 V_PP			1500
		A_V = 2, V_OUT = 1.5 V_PP			1900
0.1 dBBW	0.1 dB Bandwidth	A_V = 2, V_OUT = 0.2 V_PP, R_F = 250Ω			830		MHz
SR	Slew Rate	4V Step			6200		V/μs
t_r/t_f	Rise/Fall Time	2V Step, 10–90%			290		ps
t_r/t_f	Rise/Fall Time	0.4V Step, 10–90%			150		ps
T_{s_0.1}	0.1% Settling Time	2V Step, R_L = 200Ω			4		ns
	Overdrive Recovery Time	V_IN = 2V, A_V = 5 V/V			6		ns
DISTORTION AND NOISE RESPONSE
HD2	2^nd Harmonic Distortion	V_OUT = 2 V_PP, f = 20 MHz			-102		dBc
		V_OUT = 2 V_PP, f = 75 MHz			-96
		V_OUT = 2 V_PP, f = 125 MHz			-87
		V_OUT = 2 V_PP, f = 250 MHz			−79
		V_OUT = 1.5 V_PP, f = 250 MHz			−81
HD3	3^rd Harmonic Distortion	V_OUT = 2 V_PP, f = 20 MHz			−110		dBc
		V_OUT = 2 V_PP, f = 75 MHz			−97
		V_OUT = 2 V_PP, f = 125 MHz			−87
		V_OUT = 2 V_PP, f = 250 MHz			−70
		V_OUT = 1.5 V_PP, f = 250 MHz			−75
OIP3	Output 3rd-Order Intercept	f = 150 MHz, V_OUT = 2V_PP Composite			46.5		dBm
IMD3	Two-Tone Intermodulation	f = 150 MHz, V_OUT = 2V_PP Composite			−97		dBc
e_n	Input Voltage Noise Density	f = 10 MHz			0.9		nV/√Hz
i_n+	Input Noise Current	f = 10 MHz			11		pA/√Hz
i_n-	Input Noise Current	f = 10 MHz			11		pA/√Hz
NF	Noise Figure ⁽⁸⁾	50Ω System, A_V = 7.3, 100 MHz			7.7		dB
INPUT CHARACTERISTICS
I_BI+ / I_BI-				−75	−29	20	µA
TCIbi	Input Bias Current Temperature Drift				8		µA/°C
I_BID	Input Bias Current ⁽⁶⁾	V_CM = 0V, V_ID = 0V, I_BOFFSET = (I_B- - I_B+)/2		−10	1	10	μA
TCIbo	Input Bias Current Diff Offset Temperature Drift ⁽³⁾				0.006		µA/°C
CMRR	Common Mode Rejection Ratio	DC, V_CM = 0V, V_ID = 0V			83		dB
R_IN	Differential Input Resistance	Differential			19		Ω
C_IN	Differential Input Capacitance	Differential			1		pF
CMVR	Input Common Mode Voltage Range	CMRR > 32 dB		±1.25	±1.3		V
OUTPUT PERFORMANCE
	Output Voltage Swing ⁽³⁾	Single-Ended Output		±1.35	±1.42		V
I_OUT	Output Current ⁽³⁾	V_OUT = 0V		±120	±150		mA
I_SC	Short Circuit Current	One Output Shorted to Ground V_IN = 2V Single-Ended ⁽²⁾			150		mA
	Output Balance Error	ΔVOUT Common Mode /ΔV_OUT Differential, ΔV_OD = 1V, f < 1 Mhz			−64		dB
OUTPUT COMMON MODE CONTROL CIRCUIT
	Common Mode Small Signal Bandwidth	V_IN⁺ = V_IN⁻ = 0V			500		MHz
	Slew Rate	V_IN⁺ = V_IN⁻ = 0V			200		V/μs
V_OSCM	Input Offset Voltage	Common Mode, V_ID = 0, V_CM = 0V		−16	−6.5	4	mV
I_OSCM	Input Offset Current	⁽⁵⁾			6	18	μA
	Voltage Range			±1.18	±1.25		V
	CMRR	Measure V_OD, V_ID = 0V			82		dB
	Input Resistance				180		kΩ
	Gain	ΔV_OCM/ΔV_CM		0.99	0.995	1.0	V/V
MISCELLANEOUS PERFORMANCE
Z_T	Open Loop Transimpedance Gain	Differential			180		kΩ
PSRR	Power Supply Rejection Ratio	DC, ΔV⁺ = ΔV⁻ = 1V		74	95		dB
I_S	Supply Current ⁽³⁾	R_L = ∞		46	52	57	mA
I_S	Supply Current ⁽³⁾	R_L = ∞	At extreme temperatures			60	mA
	Enable Voltage Threshold	Single 5V Supply ⁽⁷⁾			2.5		V
	Disable Voltage Threshold	Single 5V Supply ⁽⁷⁾			2.5		V
	Enable/Disable Time				15		ns
I_SD	Supply Current, Disabled	Enable=0, Single 5-V supply		450	510	570	μA
I_SD	Supply Current, Disabled	Enable=0, Single 5-V supply	At extreme temperatures			600	μA

(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T_J = T_A. No specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T_J > T_A. See Thermal Information for information on temperature de-rating of this device." Min/Max ratings are based on product characterization and simulation. Individual parameters are tested as noted.

(2) Short circuit current should be limited in duration to no more than 10 seconds. See Power Dissipation for more details.

(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.

(4) Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlation using Statistical Quality Control (SQC) methods.

(5) Negative input current implies current flowing out of the device.

(6) I_BI is referred to a differential output offset voltage by the following relationship: V_OD(OFFSET) = I_BI*2R_F.

(7) V_EN threshold is typically +/-0.3V centered around (V⁺ + V^-) / 2 relative to ground.

(8) For test schematic, refer to Figure 34.