SNOS986E December   2001  – July 2014 LMH6622

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 ±6 V Electrical Characteristics
    6. 6.6 ±2.5 V Electrical Characteristics
    7. 6.7 Typical Performance Characteristics
  7. Parameter Measurement Information
    1. 7.1 Test Circuits
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 DSL Receive Channel Applications
    2. 9.2 Receive Channel Noise Calculation
    3. 9.3 Differential Analog-to-Digital Driver
    4. 9.4 Typical Application
      1. 9.4.1 Design Requirements
      2. 9.4.2 Detailed Design Procedure
      3. 9.4.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Driving Capacitive Load
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Circuit Layout Considerations
    2. 11.2 Layout Examples
      1. 11.2.1 SOIC Layout Example
      2. 11.2.2 VSSOP Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Trademarks
    2. 12.2 Electrostatic Discharge Caution
    3. 12.3 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

12 Device and Documentation Support

12.1 Trademarks

All other trademarks are the property of their respective owners.

12.2 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

12.3 Glossary

SLYZ022TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.