米6体育平台手机版

SNOS957H April 2001 – August 2014 LMH6672

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

D|8
- MSOI002K
DDA|8
- MPDS092F

散热焊盘机械数据 (封装 | 引脚)

DDA|8
- PPTD272A

订购信息

6 Specifications

6.1 Absolute Maximum Ratings⁽¹⁾

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_IN Differential			±1.2	V
Output Short Circuit Duration		See⁽²⁾
Supply Voltage (V⁺ − V⁻)			13.2	V
Voltage at Input/Output pins		V⁺ +0.8 V⁻ −0.8		V
Junction Temperature			+150⁽³⁾	°C
Soldering Information	Infrared or Convection (20 sec)		235	°C
Soldering Information	Wave Soldering (10 sec)		260	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 Handling Ratings

			MIN	MAX	UNIT
T_stg	Storage temperature range		−65	+150	°C
V_(ESD)	Electrostatic discharge⁽¹⁾	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	2	2000	V
V_(ESD)	Electrostatic discharge⁽¹⁾	Machine Model (MM)l⁽²⁾		200	V

(1) JEDEC document JEP155 states that 2000-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 200-V MM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

	MIN	MAX	UNIT
Supply Voltage (V⁺ - V⁻)	±2.5	±6.5	V
Operating Temperature Range	−40	150	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		SOIC Package D	SO PowerPAD Package DDA	UNIT
THERMAL METRIC⁽¹⁾		8 PINS	8 PINS	UNIT
R_θJA	Junction-to-ambient thermal resistance	172	58.6	°C/W

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

Unless otherwise specified, all limits are ensured for G = +2, V_S = ±2.5 to ±6V, R_F = R_IN = 470Ω, R_L = 100Ω.

	PARAMETER	TEST CONDITIONS	MIN⁽⁵⁾	TYP⁽⁴⁾	MAX⁽⁵⁾	UNIT
DYNAMIC PERFORMANCE
	−3dB Bandwidth			90		MHz
	0.1dB Bandwidth	V_S = ±6V		12		MHz
	Slew Rate	V_S = ±6V, 4V Step, 10-90%		135		V/μs
	Rise and Fall Time	V_S = 6V, 4V Step, 10-90%		23.5		ns
DISTORTION and NOISE RESPONSE
	2^ndHarmonic Distortion	V_O = 8.4 V_PP, f = 100 kHz, R_L = 25Ω		−105		dBc
	2^ndHarmonic Distortion	V_O = 8.4 V_PP, f = 1 MHz, R_L = 100Ω		−90		dBc
	3^rd Harmonic Distortion	V_O = 8.4 V_PP, f = 100 kHz, R_L = 25Ω		−110		dBc
	3^rd Harmonic Distortion	V_O = 8.4 V_PP, f = 1 MHz, R_L = 100Ω		−87		dBc
	Input Noise Voltage	f = 100 kHz		3.1		nV√Hz
	Input Noise Current	f = 100 kHz		1.8		pA/√Hz
INPUT CHARACTERISTICS
V_OS	Input Offset Voltage	T_J = −40°C to 125°C	−5.5	0.1	5.5	mV
V_OS	Input Offset Voltage	T_J = −40°C to 125°C	−4	−0.2	4	mV
I_B	Input Bias Current	T_J = −40°C to 125°C		8	16	µA
I_OS	Input Offset Current	T_J = −40°C to 125°C	−2.1	0	2.1	µA
CMVR	Common Voltage Range	V_S = ±6V	−6.0	−5.7 to 4.5	4.5	V
CMRR	Common-Mode Rejection Ratio	V_S = ±6V, T_J = −40°C to 125°C	150	7.5		µV/V
TRANSFER CHARACTERISTICS
A_VOL	Voltage Gain	R_L = 1k, T_J = −40°C to 125°C	1.0	5		V/mV
A_VOL	Voltage Gain	R_L = 25Ω, T_J = −40°C to 125°C	0.67	3.4		V/mV
V_O	Output Swing	R_L = 25Ω, V_S = ±6V	−4.5	±4.8	4.5	V
V_O	Output Swing	R_L = 25Ω, T_J = −40°C to 125°C, V_S = ±6V	−4.4	±4.8	4.4	V
V_O	Output Swing	R_L = 1k, V_S = ±6V	−4.8	±4.8	4.8	V
V_O	Output Swing	R_L = 1k, T_J = −40°C to 125°C, V_S = ±6V	−4.7	±4.8	4.7	V
I_SC	Output Current⁽²⁾	V_O = 0, V_S = ±6V	350	525		mA
I_SC	Output Current⁽²⁾	V_O = 0, V_S = ±6V, T_J = −40°C to 125°C	260	600		mA
POWER SUPPLY
I_S	Supply Current/Amp	V_S = ±6V			8	mA
I_S	Supply Current/Amp	V_S = ±6V, T_J = −40°C to 125°C		7.2	9	mA
PSRR	Power Supply Rejection Ratio	V_S = ±2.5V to ±6V, T_J = −40°C to 125°C	72	88.5		dB

6.6 ±2.5V Electrical Characteristics

Unless otherwise specified, all limits are ensured for G = +2, V_S = ±2.5 to ±6V, R_F = R_IN = 470Ω, R_L = 100Ω.

	PARAMETER	TEST CONDITIONS	MIN⁽⁵⁾	TYP⁽⁴⁾	MAX⁽⁵⁾	UNIT
DYNAMIC PERFORMANCE
	−3 dB Bandwidth			80		MHz
	0.1 dB Bandwidth			12		MHz
	Rise and Fall Time	2V Step, 10-90%		14		ns
DISTORTION and NOISE RESPONSE
	2^nd Harmonic Distortion	V_O = 2 V_PP, f = 100 kHz, R_L = 25Ω		−96		dBc
	2^nd Harmonic Distortion	V_O = 2 V_PP, f = 1 MHz, R_L = 100Ω		−85		dBc
	3^rd Harmonic Distortion	V_O = 2 V_PP, f = 100 kHz, R_L = 25Ω		−98		dBc
	3^rd Harmonic Distortion	V_O = 2 V_PP, f = 1 MHz, R_L = 100Ω		−87		dBc
INPUT CHARACTERISTICS
V_OS	Input Offset Voltage	T_J = −40°C to 125°C	−5.5		5.5	mV
V_OS	Input Offset Voltage		−4.0	0.02	4.0	mV
I_B	Input Bias Current	T_J = −40°C to 125°C		8.0	16	µA
CMVR	Common-Mode Voltage Range		−2.5		1.0	V
CMRR	Common-Mode Rejection Ratio	T_J = −40°C to 125°C	150	8		µV/V
TRANSFER CHARACTERISTICS
A_VOL	Voltage Gain	R_L = 25Ω, T_J = −40°C to 125°C	0.67	3		V/mV
A_VOL	Voltage Gain	R_L = 1k, T_J = −40°C to 125°C	1.0	4		V/mV
OUTPUT CHARACTERISTICS
V_O	Output Voltage Swing	R_L = 25Ω	1.20	1.45		V
		R_L = 25Ω, T_J = −40°C to 125°C	1.10	1.35
		R_L = 1k	1.30	1.60
		R_L = 1k, T_J = −40°C to 125°C	1.25	1.50
POWER SUPPLY
I_S	Supply Current/Amp				8.0	mA
I_S	Supply Current/Amp	T_J = −40°C to 125°C		6.7	9.0	mA

(1) Human body model, 1.5 kΩ in series with 100 pF. Machine model, 200 Ω in series with 100 pF.

(2) Shorting the output to either supply or ground will exceed the absolute maximum T_J and can result in failure.

(3) The maximum power dissipation is a function of T_J(MAX), R_θJA and T_A. The maximum allowable power dissipation at any ambient temperature is P_D = (T_J(MAX) − T_A)/R_θJA. All numbers apply for packages soldered directly onto a PC board.

(4) Typical values represent the most likely parametric norm.

(5) All limits are specified by testing, characterization or statistical analysis.