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SNOSAF2E February 2005 – May 2016 LMH6703

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

D|8
- MSOI002K
DBV|6
- MPDS026Q

散热焊盘机械数据 (封装 | 引脚)

订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
V_S				±6.75	V
I_OUT			See ⁽²⁾
	Common mode input voltage		V⁻	V⁺	V
	Maximum junction temperature			150	°C
	Storage temperature		−65	150	°C
	Soldering Information	Infrared or convection (20 sec.)		235	°C
	Soldering Information	Wave soldering (10 sec.)		260	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) The maximum output current (I_OUT) is determined by device power dissipation limitations.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Machine model (MM), per JEDEC specification JESD22-C101, all pins⁽²⁾	±200	V

(1) Human body model: 1.5 kΩ in series with 100 pF. JEDEC document JEP155 states that 2000-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 2000-V HBM is possible with the necessary precautions. Pins listed as ±2000 V may actually have higher performance.

(2) Machine model: 0 Ω in series with 200 pF. JEDEC document JEP157 states that 200-V MM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 200-V MM is possible with the necessary precautions. Pins listed as ±200 V may actually have higher performance.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	NOM	MAX	UNIT
	Operating temperature	–40		85	°C
	Supply voltage	±4		±6	V

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications, see Electrical Characteristics.

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		LMH6703		UNIT
		DBV (SOT-23)	D (SOIC)
		6 PINS	8 PINS
R_θJA	Junction-to-ambient thermal resistance	182	133	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	139	79	°C/W
R_θJB	Junction-to-board thermal resistance	40	73	°C/W
ψ_JT	Junction-to-top characterization parameter	28	28	°C/W
ψ_JB	Junction-to-board characterization parameter	40	73	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report (SPRA953).

6.5 Electrical Characteristics

at T_J = 25°C, A_V = 2, V_S = ±5 V, R_L = 100 Ω, R_F = 560 Ω, SD = Floating (unless otherwise noted)⁽¹⁾
Boldface limits apply at the temperature extremes.

PARAMETER		CONDITIONS	MIN ⁽⁴⁾	TYP ⁽³⁾	MAX ⁽⁴⁾	UNIT
FREQUENCY DOMAIN PERFORMANCE
SSBW	–3-dB bandwidth	V_OUT = 0.5 V_PP, A_V = +1		1800		MHz
SSBW		V_OUT = 0.5 V_PP, A_V = +2		1200
LSBW		V_OUT = 2 V_PP		750
LSBW		V_OUT = 4 V_PP		500
GF	0.1-dB gain flatness	V_OUT = 0.5 V_PP		150		MHz
GF	0.1-dB gain flatness	V_OUT = 2 V_PP		150		MHz
DG	Differential gain	R_L = 150 Ω, 4.43 MHz		0.01%
DP	Differential phase	R_L = 150 Ω, 4.43 MHz		0.02		deg
TIME DOMAIN RESPONSE
t_r	Rise time	2-V step, 10% to 90%		0.5		ns
t_r	Rise time	6-V step, 10% to 90%		1.05		ns
t_f	Fall time	2-V step, 10% to 90%		0.5		ns
t_f	Fall time	6-V step, 10% to 90%		1.05		ns
SR	Slew rate	4-V step, 10% to 90% ⁽²⁾		4200		V/µs
SR	Slew rate	6-V step, 10% to 90% ⁽²⁾		4500		V/µs
t_s	Settling time	2-V step, V_OUT within 0.1%		10		ns
DISTORTION AND NOISE RESPONSE
HD2	2^nd harmonic distortion	2 V_PP, 5 MHz, SOT-23-6		−87		dBc
		2 V_PP, 20 MHz, SOT-23-6		−69
		2 V_PP, 50 MHz, SOT-23-6		−60
HD3	3^rd harmonic distortion	2 V_PP, 5 MHz, SOT-23-6		−100		dBc
		2 V_PP, 20 MHz, SOT-23-6		−90
		2 V_PP, 50 MHz, SOT-23-6		−70
IMD	3^rd order intermodulation products	50 MHz, P_O = 5 dBm/ tone		−80		dBc
e_n	Input referred voltage noise	>1 MHz		2.3		nV/√Hz
i_n	Input referred noise current	Inverting Pin >1 MHz		18.5		pA/√Hz
i_n	Input referred noise current	Non-Inverting Pin >1 MHz		3		pA/√Hz
u
V_OS	Input offset voltage			±1.5	±7 ±9	mV
TCV_OS	Input offset voltage average drift	⁽⁶⁾		22		µV/°C
I_B	Input bias current	Non-Inverting ⁽⁵⁾		−7	–20 –23	µA
I_B	Input bias current	Inverting ⁽⁵⁾		−2	±35 ±44	µA
TCI_B	Input bias current average drift	Non-Inverting ⁽⁶⁾		+30		nA/°C
TCI_B	Input bias current average drift	Inverting ⁽⁶⁾		−70		nA/°C
V_O	Output voltage range	R_L = ∞	±3.3	±3.45		V
V_O	Output voltage range	R_L = 100 Ω	±3.2 ±3.14	±3.4		V
PSRR	Power supply rejection ratio	V_S = ± 4.0 V to ±6.0 V	48 46	52		dB
CMRR	Common mode rejection ratio	V_CM = −1.0 V to +1.0 V	45 44	47		dB
I_S	Supply current (enabled)	SD = 2 V, R_L = ∞		11	12.5 15.0	mA
I_S	Supply current (disabled)	SD = 0.8 V, R_L = ∞		0.2	0.900 0.935	mA
MISCELLANEOUS PERFORMANCE
R_IN+	Non-inverting input resistance			1		MΩ
R_IN−	Inverting input resistance	Output Impedance of Input Buffer		30		Ω
C_IN	Non-inverting input capacitance			0.8		pF
R_O	Output resistance	Closed Loop		0.05		Ω
CMVR	Input common mode voltage range	CMRR ≥ 40 dB	±1.9			V
I_O	Linear output current	V_IN = 0 V, V_OUT ≤ ±80 mV	±55	±90		mA
ENABLE/DISABLE PERFORMANCE (DISABLED LOW)
T_ON	Enable time			10		ns
T_OFF	Disable time			10		ns
	Output glitch			50		mV_PP
V_IH	Enable voltage	SD ≥ V_IH	2.0			V
V_IL	Disable voltage	SD ≤ V_IL			0.8	V
I_IH	Disable pin bias current, high	SD = V⁺⁽⁵⁾		−7	±70	µA
I_IL	Disable pin bias current, low	SD = 0 V ⁽⁵⁾	−50	−240	−400	µA
I_OZ	Disabled output leakage current	V_OUT = ±1.8 V		0.07	±25 ±40	µA

(1) Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T_J = T_A. Parametric performance is indicated in the electrical tables under conditions of internal self-heating where T_J > T_A.

(2) Slew rate is the average of the rising and falling edges.

(3) Typical numbers are the most likely parametric norm.

(4) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation using Statistical Quality Control (SQC) methods.

(5) Negative input current implies current flowing out of the device.

(6) Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.