ZHCSHN9A February   2018  – April 2018 LMK05028

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化方框图
  4. 4 修订历史记录
  5. 5 说明 （续）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
    2. 6.1 Device Start-Up Modes
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Diagrams
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Output Clock Test Configurations
  9. 9 Detailed Description
    1. 9.1 Overview
      1. 9.1.1 ITU-T G.8262 (SyncE) Standards Compliance
    2. 9.2 Functional Block Diagrams
      1. 9.2.1 PLL Architecture Overview
      2. 9.2.2 3-Loop Mode
        1. 9.2.2.1 PLL Output Clock Phase Noise Analysis in 3-Loop Mode
      3. 9.2.3 2-Loop REF-DPLL Mode
      4. 9.2.4 2-Loop TCXO-DPLL Mode
      5. 9.2.5 PLL Configurations for Common Applications
    3. 9.3 Feature Description
      1. 9.3.1  Oscillator Input (XO_P/N)
      2. 9.3.2  TCXO/OCXO Input (TCXO_IN)
      3. 9.3.3  Reference Inputs (INx_P/N)
      4. 9.3.4  Clock Input Interfacing and Termination
      5. 9.3.5  Reference Input Mux Selection
        1. 9.3.5.1 Automatic Input Selection
        2. 9.3.5.2 Manual Input Selection
      6. 9.3.6  Hitless Switching
      7. 9.3.7  Gapped Clock Support on Reference Inputs
      8. 9.3.8  Input Clock and PLL Monitoring, Status, and Interrupts
        1. 9.3.8.1 XO Input Monitoring
        2. 9.3.8.2 TCXO Input Monitoring
        3. 9.3.8.3 Reference Input Monitoring
          1. 9.3.8.3.1 Reference Validation Timer
          2. 9.3.8.3.2 Amplitude Monitor
          3. 9.3.8.3.3 Missing Pulse Monitor (Late Detect)
          4. 9.3.8.3.4 Runt Pulse Monitor (Early Detect)
          5. 9.3.8.3.5 Frequency Monitoring
          6. 9.3.8.3.6 Phase Valid Monitor for 1-PPS Inputs
        4. 9.3.8.4 PLL Lock Detectors
        5. 9.3.8.5 Tuning Word History
        6. 9.3.8.6 Status Outputs
        7. 9.3.8.7 Interrupt
      9. 9.3.9  PLL Channels
        1. 9.3.9.1  PLL Frequency Relationships
        2. 9.3.9.2  Analog PLL (APLL)
        3. 9.3.9.3  APLL XO Doubler
        4. 9.3.9.4  APLL Phase Frequency Detector (PFD) and Charge Pump
        5. 9.3.9.5  APLL Loop Filter
        6. 9.3.9.6  APLL Voltage Controlled Oscillator (VCO)
          1. 9.3.9.6.1 VCO Calibration
        7. 9.3.9.7  APLL VCO Post-Dividers (P1, P2)
        8. 9.3.9.8  APLL Fractional N Divider (N) With SDM
        9. 9.3.9.9  REF-DPLL Reference Divider (R)
        10. 9.3.9.10 TCXO/OCXO Input Doubler and M Divider
        11. 9.3.9.11 TCXO Mux
        12. 9.3.9.12 REF-DPLL and TCXO-DPLL Time-to-Digital Converter (TDC)
        13. 9.3.9.13 REF-DPLL and TCXO-DPLL Loop Filter
        14. 9.3.9.14 REF-DPLL and TCXO-DPLL Feedback Dividers
      10. 9.3.10 Output Clock Distribution
      11. 9.3.11 Output Channel Muxes
        1. 9.3.11.1 TCXO/Ref Bypass Mux
      12. 9.3.12 Output Dividers
      13. 9.3.13 Clock Outputs (OUTx_P/N)
        1. 9.3.13.1 AC-Differential Output (AC-DIFF)
        2. 9.3.13.2 HCSL Output
        3. 9.3.13.3 LVCMOS Output (1.8 V, 2.5 V)
        4. 9.3.13.4 Output Auto-Mute During LOL or LOS
      14. 9.3.14 Glitchless Output Clock Start-Up
      15. 9.3.15 Clock Output Interfacing and Termination
      16. 9.3.16 Output Synchronization (SYNC)
      17. 9.3.17 Zero-Delay Mode (ZDM) Configuration
      18. 9.3.18 PLL Cascading With Internal VCO Loopback
    4. 9.4 Device Functional Modes
      1. 9.4.1 Device Start-Up Modes
        1. 9.4.1.1 EEPROM Mode
        2. 9.4.1.2 ROM Mode
      2. 9.4.2 PLL Operating Modes
        1. 9.4.2.1 Free-Run Mode
        2. 9.4.2.2 Lock Acquisition
        3. 9.4.2.3 Locked Mode
        4. 9.4.2.4 Holdover Mode
      3. 9.4.3 PLL Start-Up Sequence
      4. 9.4.4 Digitally-Controlled Oscillator (DCO) Mode
        1. 9.4.4.1 DCO Frequency Step Size
        2. 9.4.4.2 DCO Direct-Write Mode
      5. 9.4.5 Zero-Delay Mode (ZDM)
      6. 9.4.6 Cascaded PLL Operation
    5. 9.5 Programming
      1. 9.5.1 Interface and Control
      2. 9.5.2 I2C Serial Interface
        1. 9.5.2.1 I2C Block Register Transfers
      3. 9.5.3 SPI Serial Interface
        1. 9.5.3.1 SPI Block Register Transfer
      4. 9.5.4 Register Map Generation
      5. 9.5.5 General Register Programming Sequence
      6. 9.5.6 EEPROM Programming Flow
        1. 9.5.6.1 EEPROM Programming Using Register Commit (Method #1)
          1. 9.5.6.1.1 Write SRAM Using Register Commit
          2. 9.5.6.1.2 Program EEPROM
        2. 9.5.6.2 EEPROM Programming Using Direct SRAM Writes (Method #2)
          1. 9.5.6.2.1 Write SRAM Using Direct Writes
      7. 9.5.7 Read SRAM
      8. 9.5.8 Read EEPROM
      9. 9.5.9 EEPROM Start-Up Mode Default Configuration
    6. 9.6 Register Maps
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Device Start-Up Sequence
      2. 10.1.2 Power Down (PDN) Pin
      3. 10.1.3 Power Rail Sequencing, Power Supply Ramp Rate, and Mixing Supply Domains
        1. 10.1.3.1 Mixing Supplies
        2. 10.1.3.2 Power-On Reset (POR) Circuit
        3. 10.1.3.3 Powering Up From a Single-Supply Rail
        4. 10.1.3.4 Power Up From Split-Supply Rails
        5. 10.1.3.5 Non-Monotonic or Slow Power-Up Supply Ramp
      4. 10.1.4 Slow or Delayed XO Start-Up
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
    3. 10.3 Do's and Don'ts
  11. 11Power Supply Recommendations
    1. 11.1 Power Supply Bypassing
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 Thermal Reliability
  13. 13器件和文档支持
    1. 13.1 器件支持
      1. 13.1.1 时钟架构
      2. 13.1.2 TICS Pro
    2. 13.2 文档支持
      1. 13.2.1 相关文档
    3. 13.3 接收文档更新通知
    4. 13.4 社区资源
    5. 13.5 商标
    6. 13.6 静电放电警告
    7. 13.7 术语表
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

9.5.7 Read SRAM

The contents of the SRAM can be read back, one word at a time, starting with that of the requested address through the following sequence. This sequence can be used to verify the contents written to SRAM before an EEPROM program cycle.

  1. Write the most significant 5 bits of the SRAM address to R169 (MEMADR byte 1) and write the least significant 8 bits of the SRAM address to R170 (MEMADR byte 0).
  2. The SRAM data located at the address specified in the step above can be obtained by reading R172 (RAMDAT byte) in the same register transaction.
    • Any additional read transfers that is part of the same transaction will cause the SRAM address to be auto-incremented and a subsequent read will take place at the next SRAM address.
    • Byte or Block read transfers from R172 can be used to read the entire SRAM map sequentially from Byte 0 to 508 (509 bytes total).
    • Access to SRAM will terminate at the end of current register transaction.

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