ZHCSOY4B september   2021  – june 2023 LMK1D2102 , LMK1D2104

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Device Comparison
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  9. 8 Parameter Measurement Information
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Fail-Safe Inputs
    4. 9.4 Device Functional Modes
      1. 9.4.1 LVDS Output Termination
      2. 9.4.2 Input Termination
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.5 Electrical Characteristics

VDD = 1.8 V ± 5 %, –40°C ≤ TA ≤ 105°C. Typical values are at VDD = 1.8 V, 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLY CHARACTERISTICS
IDDSTAT LMK1D2102 All-outputs enabled and unterminated, f = 0 Hz 50 mA
IDDSTAT LMK1D2104 All-outputs enabled and unterminated, f = 0 Hz 55 mA
IDD100M LMK1D2102 All-outputs enabled, RL = 100 Ω, f =100 MHz 70 80 mA
IDD100M LMK1D2104 All-outputs enabled, RL = 100 Ω, f =100 MHz 84 110 mA
OUTPUT BANK CONTROL (EN) INPUT CHARACTERISTICS (Applies to VDD = 1.8 V ± 5%, 2.5 V ± 5% and 3.3 V ± 5%)
VdI3 3-state input Open 0.4 × VCC V
VIH Input high voltage Minimum input voltage for a logical "1" state 0.7 × VCC VCC + 0.3 V
VIL Input low voltage Maximum input voltage for a logical "0" state –0.3 0.3 × VCC V
IIH Input high current VDD can be 1.8V/2.5V/3.3V with VIH = VDD 30 µA
IIL Input low current VDD can be 1.8V/2.5V/3.3V with VIH = VDD –30 µA
Rpull-up(EN) Input pullup resistor 500 kΩ
Rpull-down(EN) Input pulldown resistor 320 kΩ
SINGLE-ENDED LVCMOS/LVTTL CLOCK INPUT (Applies to VDD = 1.8 V ± 5%, 2.5 V ± 5% and 3.3 V ± 5%)
fIN Input frequency Clock input DC 250 MHz
VIN_S-E Single-ended Input Voltage Swing Assumes a square wave input with two levels 0.4 3.465 V
dVIN/dt Input Slew Rate (20% to 80% of the amplitude) 0.05 V/ns
IIH Input high current VDD = 3.465 V, VIH = 3.465 V 50 µA
IIL Input low current VDD = 3.465 V, VIL = 0 V –30 µA
CIN_SE Input capacitance at 25°C 3.5 pF
DIFFERENTIAL CLOCK INPUT (Applies to VDD = 1.8 V ± 5%, 2.5 V ± 5% and 3.3 V ± 5%)
fIN Input frequency Clock input 2 GHz
VIN,DIFF(p-p) Differential input voltage peak-to-peak {2*(VINP-VINN)} VICM = 1 V (VDD = 1.8 V) 0.3 2.4 VPP
VICM = 1.25 V (VDD = 2.5 V/3.3 V) 0.3 2.4
VICM Input common mode voltage VIN,DIFF(P-P) > 0.4 V (VDD = 1.8 V/2.5/3.3 V) 0.25 2.3 V
IIH Input high current VDD = 3.465 V, VINP = 2.4 V, VINN = 1.2 V 30 µA
IIL Input low current VDD = 3.465 V, VINP = 0 V, VINN = 1.2 V –30 µA
CIN_S-E Input capacitance (Single-ended) at 25°C 3.5  pF
LVDS DC OUTPUT CHARACTERISTICS
|VOD| Differential output voltage magnitude |VOUTP - VOUTN| VIN,DIFF(P-P) = 0.3 V, RLOAD = 100 Ω 250 350 450 mV
ΔVOD Change in differential output voltage magnitude. Per output, defined as the difference between VOD in logic hi/lo states. VIN,DIFF(P-P) = 0.3 V, RLOAD = 100 Ω –15 15 mV
VOC(SS) Steady-state common mode output voltage VIN,DIFF(P-P) = 0.3 V, RLOAD = 100 Ω (VDD = 1.8 V) 1 1.2 V
VIN,DIFF(P-P) = 0.3 V, RLOAD = 100 Ω (VDD = 2.5 V/3.3 V) 1.1 1.375
ΔVOC(SS) Change in steady-state common mode output voltage. Per output, defined as the difference in VOC in logic hi/lo states. VIN,DIFF(P-P) = 0.3 V, RLOAD = 100 Ω –15 15 mV
LVDS AC OUTPUT CHARACTERISTICS
Vring Output overshoot and undershoot VIN,DIFF(P-P) = 0.3 V, RLOAD = 100 Ω, fOUT = 491.52 MHz –0.1 0.1 VOD
VOS Output AC common mode VIN,DIFF(P-P) = 0.3 V, RLOAD = 100 Ω  50 100 mVpp
IOS Short-circuit output current (differential) VOUTP = VOUTN –12 12 mA
IOS(cm) Short-circuit output current (common-mode) VOUTP = VOUTN = 0 –24 24 mA
tPD Propagation delay VIN,DIFF(P-P) = 0.3 V, RLOAD = 100 Ω (2) 0.3 0.575 ns
tSK, O Output skew Skew between outputs with the same load conditions (4 and 8 channel) (3) 20 ps
tSK, b Output bank skew Skew between the outputs within the same bank (2102/2104) (4) 15 ps
tSK, PP Part-to-part skew Skew between outputs on different parts subjected to the same operating conditions with the same input and output loading. 250 ps
tSK, P Pulse skew 50% duty cycle input, crossing point-to-crossing-point distortion (4) –20 20 ps
tRJIT(ADD) Random additive Jitter (rms) fIN = 156.25 MHz with 50% duty-cycle, Input slew rate = 1.5V/ns, Integration range = 12 kHz – 20 MHz, with output load RLOAD = 100 Ω  50 60 fs, RMS
Phase noise Phase Noise for a carrier frequency of 156.25 MHz with 50% duty-cycle, Input slew rate = 1.5V/ns with output load RLOAD = 100 Ω PN1kHz  –143 dBc/Hz
PN10kHz  –152
PN100kHz –157
PN1MHz  –160
PNfloor  –164
MUXISO Mux Isolation fIN = 156.25 MHz. The difference in power level at fIN when the selected clock is active and the unselected clock is static versus when the selected clock is inactive and the unselected clock is active. 80 dB
SPUR Spurious suppression between dual banks Differential inputs with FIN0 = 491.52 MHz, FIN1 = 61.44 MHz; Measured between neighboring outputs –60 dB
Different inputs with FIN0 = 491.52 MHz, FIN1 = 15.36 MHz; Measured between neighboring outputs –70
ODC Output duty cycle With 50% duty cycle input 45 55 %
tR/tF Output rise and fall time 20% to 80% with RLOAD = 100 Ω 300 ps
VAC_REF Reference output voltage VDD = 2.5 V, ILOAD = 100 µA 0.9 1.25 1.375 V
POWER SUPPLY NOISE REJECTION (PSNR) VDD = 2.5 V/ 3.3 V
PSNR Power Supply Noise Rejection (fcarrier = 156.25 MHz) 10 kHz, 100 mVpp ripple injected on VDD –70 dBc
1 MHz, 100 mVpp ripple injected on VDD –50
(1) Measured between single-ended/differential input crossing point to the differential output crossing point.
(2) For the dual bank devices, the inputs are phase aligned and have 50% duty cycle.
(3) Defined as the magnitude of the time difference between the high-to-low and low-to-high propagation delay times at an output.
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