米6体育平台手机版

ZHCSDM7B February 2012 – December 2014 LMP8646

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

DDC|6
- MPDS124I

散热焊盘机械数据 (封装 | 引脚)

订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾⁽¹⁾

	MIN	MAX	UNIT
Supply Voltage (V_S = V⁺ - V⁻)		13.2	V
Differential voltage +IN- (-IN)		6	V
Voltage at pins +IN, -IN	–6	80	V
Voltage at R_G pin		13.2	V
Voltage at OUT pin	V^-	V⁺	V
Junction Temperature⁽²⁾		150	°C
Storage temperature range	–65	150	°C
For soldering specifications see SNOA549

6.2 ESD Ratings

				VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	Pins +IN and -IN	±4000	V
		Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	All pins except +IN and -IN	±2000
		Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾		±1250
		Machine model		±250

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

		MIN	MAX	UNIT
Supply Voltage (V_S = V⁺ - V⁻)		2.7	12	V
Temperature Range⁽²⁾		–40	125	V

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		LMP8646	UNIT
		DDC
		6 PINS
R_θJA	Junction-to-ambient thermal resistance	96	°C/W

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics: 2.7 V

Unless otherwise specified, all limits ensured for at T_A = 25°C, V_S= (V⁺– V^-) = (2.7 V - 0 V) = 2.7 V, −2 V < V_CM < 76 V, R_G= 25 kΩ, R_L = 10 kΩ.⁽³⁾

PARAMETER		TEST CONDITIONS	MIN⁽⁵⁾	TYP⁽⁴⁾	MAX⁽⁵⁾	UNIT
V_OFFSET	Input Offset Voltage	V_CM = 2.1 V	–1		1	mV
V_OFFSET	Input Offset Voltage	V_CM = 2.1 V, –40°C ≤ T_J≤ 125°C	–1.7		1.7	mV
TCV_OS	Input Offset Voltage Drift⁽⁶⁾⁽⁸⁾	V_CM = 2.1 V			7	μV/°C
I_B	Input Bias Current⁽⁹⁾	V_CM = 2.1 V		12	20	μA
e_ni	Input Voltage Noise⁽⁸⁾	f > 10 kHz, R_G = 5 kΩ		120		nV/√Hz
V_SENSE	Max Input Sense Voltage⁽⁸⁾	V_CM = 12 V, R_G = 5 kΩ			600	mV
Gain A_V	Adjustable Gain Setting⁽⁸⁾	V_CM = 12 V	1		100	V/V
Gm	Transconductance = 1/R_IN	V_CM= 2.1 V		200		µA/V
	Accuracy	V_CM = 2.1 V	–2%		2%
	Accuracy	V_CM = 2.1 V, –40°C ≤ T_J≤ 125°C	–3.4%		3.4%
	Gm drift⁽⁸⁾	−40°C to 125°C, V_CM= 2.1 V			140	ppm /°C
PSRR	Power Supply Rejection Ratio	V_CM = 2.1 V, 2.7 V < V⁺ < 12 V	85			dB
CMRR	Common-Mode Rejection Ratio	2.1 V < V_CM < 76 V	95			dB
CMRR	Common-Mode Rejection Ratio	–2 V <V_CM< 2.1 V	55			dB
SR	Slew Rate⁽⁷⁾⁽⁸⁾	V_CM = 5 V, C_G= 4 pF, V_SENSE from 25 mV to 175 mV, C_L = 30 pF, R_L = 1MΩ		0.5		V/µs
I_S	Supply Current	V_CM = 2.1 V		380	610	uA
		V_CM = 2.1 V, –40°C ≤ T_J≤ 125°C			807
		V_CM = –2 V		2000	2500
		V_CM = –2 V, –40°C ≤ T_J≤ 125°C			2700
V_OUT	Maximum Output Voltage	V_CM = 2.1 V, R_G = 500 kΩ	1.1			V
	Minimum Output Voltage	V_CM = 2.1 V			20	mV
	Maximum Output Voltage	VS = V_CM = 3.3 V, R_G = 500 kΩ	1.6			V
	Minimum Output Voltage	VS = V_CM = 3.3 V, R_G = 500 kΩ			22	mV
I_OUT	Output current⁽⁸⁾	Sourcing, V_OUT= 600 mV, R_G = 150 kΩ		5		mA
C_LOAD	Max Output Capacitance Load⁽⁸⁾			30		pF

6.6 Electrical Characteristics: 5 V

Unless otherwise specified, all limits ensured for at T_A = 25°C, V_S= V⁺-V^-, V⁺ = 5 V, V⁻ = 0 V, −2 V < V_CM < 76 V, R_g= 25 kΩ, R_L = 10 kΩ.⁽³⁾

PARAMETER		TEST CONDITIONS	MIN⁽⁵⁾	TYP⁽⁴⁾	MAX⁽⁵⁾	UNIT
V_OFFSET	Input Offset Voltage	V_CM = 2.1 V	–1		1	mV
V_OFFSET	Input Offset Voltage	V_CM = 2.1 V, –40°C ≤ T_J≤ 125°C	–1.7		1.7	mV
TCV_OS	Input Offset Voltage Drift⁽⁶⁾⁽⁸⁾	V_CM = 2.1 V			7	μV/°C
I_B	Input Bias Current⁽⁹⁾	V_CM = 2.1 V		12.5	22	μA
e_ni	Input Voltage Noise⁽⁸⁾	f > 10 kHz, R_G = 5 kΩ		120		nV/√Hz
V_SENSE(MAX)	Max Input Sense Voltage⁽⁸⁾	V_CM = 12 V, R_G = 5 kΩ		600		mV
Gain A_V	Adjustable Gain Setting⁽⁸⁾	V_CM = 12 V	1		100	V/V
Gm	Transconductance = 1/R_IN	V_CM = 2.1 V		200		µA/V
	Accuracy	V_CM = 2.1 V	–2%		2%
	Accuracy	V_CM = 2.1 V, –40°C ≤ T_J≤ 125°C	–3.4%		3.4%
	Gm drift⁽⁸⁾	−40°C to 125°C, V_CM= 2.1 V			140	ppm /°C
PSRR	Power Supply Rejection Ratio	V_CM = 2.1 V, 2.7 V < V⁺ < 12 V,	85			dB
CMRR	Common-Mode Rejection Ratio	2.1 V <V_CM < 76 V	95			dB
CMRR	Common-Mode Rejection Ratio	–2 V < V_CM < 2.1 V	55			dB
SR	Slew Rate⁽⁷⁾⁽⁸⁾	V_CM = 5 V, C_G= 4 pF, V_SENSE from 100 mV to 500 mV, C_L = 30 pF, R_L= 1MΩ		0.5		V/µs
I_S	Supply Current	V_CM = 2.1 V		450	660	uA
		V_CM = 2.1 V, –40°C ≤ T_J≤ 125°C			939
		V_CM = –2 V		2100	2800
		V_CM = –2 V, –40°C ≤ T_J≤ 125°C			3030
V_OUT	Maximum Output Voltage	V_CM = 5 V, R_G= 500 kΩ	3.3			V
V_OUT	Minimum Output Voltage	V_CM = 2.1 V			22	mV
I_OUT	Output current⁽⁸⁾	Sourcing, V_OUT= 1.65 V, R_G = 150 kΩ		5		mA
C_LOAD	Max Output Capacitance Load⁽⁸⁾			30		pF

6.7 Electrical Characteristics: 12 V

Unless otherwise specified, all limits ensured for at T_A = 25°C, V_S= V⁺ - V^-, V⁺ = 12 V, V⁻ = 0 V, −2 V < V_CM < 76 V, R_g= 25 kΩ, R_L = 10 kΩ.⁽³⁾

PARAMETER		TEST CONDITIONS	MIN⁽⁵⁾	TYP⁽⁴⁾	MAX⁽⁵⁾	UNIT
V_OFFSET	Input Offset Voltage	V_CM = 2.1 V	–1		1	mV
V_OFFSET	Input Offset Voltage	V_CM = 2.1 V, –40°C ≤ T_J≤ 125°C	–1.7		1.7	mV
TCV_OS	Input Offset Voltage Drift⁽⁶⁾⁽⁸⁾	V_CM = 2.1 V			7	μV/°C
I_B	Input Bias Current⁽⁹⁾	V_CM = 2.1 V		13	23	μA
e_ni	Input Voltage Noise⁽⁸⁾	f > 10 kHz, R_G = 5 kΩ		120		nV/√Hz
V_SENSE(MAX)	Max Input Sense Voltage⁽⁸⁾	V_CM =12 V, R_G = 5 kΩ		600		mV
Gain A_V	Adjustable Gain Setting⁽⁸⁾	V_CM = 12 V	1		100	V/V
Gm	Transconductance = 1/R_IN	V_CM = 2.1 V		200		µA/V
	Accuracy	V_CM = 2.1 V	–2%		2%
	Accuracy	V_CM = 2.1 V, –40°C ≤ T_J≤ 125°C	–3.4%		3.4%
	Gm drift⁽⁸⁾	−40°C to 125°C, V_CM =2.1 V			140	ppm /°C
PSRR	Power Supply Rejection Ratio	V_CM = 2.1 V, 2.7 V < V⁺ < 12 V	85			dB
CMRR	Common-Mode Rejection Ratio	2.1 V < V_CM < 76 V	95			dB
CMRR	Common-Mode Rejection Ratio	–2 V < V_CM < 2.1 V	55			dB
SR	Slew Rate⁽⁷⁾⁽⁸⁾	V_CM = 5 V, C_G= 4 pF, V_SENSE from 100 mV to 500 mV, C_L = 30 pF, R_L=1 MΩ		0.6		V/µs
I_S	Supply Current	V_CM = 2.1 V		555	845	uA
		V_CM = 2.1 V, –40°C ≤ T_J≤ 125°C			1123
		V_CM = –2 V		2200	2900
		_CM = –2 V, –40°C ≤ T_J≤ 125°C			3110
V_OUT	Maximum Output Voltage	V_CM = 12 V, R_G= 500 kΩ,	10			V
V_OUT	Minimum Output Voltage	V_CM = 2.1 V			24	mV
I_OUT	Output current⁽⁸⁾	Sourcing, V_OUT= 5.25 V, R_G = 150 kΩ		5		mA
C_LOAD	Max Output Capacitance Load⁽⁸⁾			30		pF

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics: 2.7 V tables.

(2) The maximum power dissipation must be derated at elevated temperatures and is dictated by T_J(MAX), θ_JA, and the ambient temperature, T_A. The maximum allowable power dissipation P_DMAX = (T_J(MAX) - T_A)/ θ_JA or the number given in Absolute Maximum Ratings, whichever is lower.

(3) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T_J = T_A. No assurance of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T_J > T_A.

(4) Typical values represent the most likely parametric norm at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not specified on shipped production material.

(5) All limits are specified by testing, design, or statistical analysis.

(6) Offset voltage temperature drift is determined by dividing the change in V_OS at the temperature extremes by the total temperature change.

(7) The number specified is the average of rising and falling slew rates and measured at 90% to 10%.

(8) This parameter is specified by design and/or characterization and is not tested in production.

(9) Positive Bias Current corresponds to current flowing into the device.