ZHCSJY0B June   2012  – June 2019 LMR12015 , LMR12020

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      典型应用电路
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Descriptions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Recommended Operating Ratings
    3. 6.3 Electrical Characteristics
    4. 6.4 Typical Performance Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Boost Function
      2. 7.3.2  Low Input Voltage Considerations
      3. 7.3.3  High Output Voltage Considerations
      4. 7.3.4  Frequency Synchronization
      5. 7.3.5  Current Limit
      6. 7.3.6  Frequency Foldback
      7. 7.3.7  Soft Start
      8. 7.3.8  Output Overvoltage Protection
      9. 7.3.9  Undervoltage Lockout
      10. 7.3.10 Thermal Shutdown
    4. 7.4 Device Operation Modes
      1. 7.4.1 Enable Pin / Shutdown Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Detailed Design Procedure
        1. 8.2.1.1  Custom Design With WEBENCH® Tools
        2. 8.2.1.2  Inductor Selection
          1. 8.2.1.2.1 Inductor Calculation Example
          2. 8.2.1.2.2 Inductor Material Selection
        3. 8.2.1.3  Input Capacitor
        4. 8.2.1.4  Output Capacitor
        5. 8.2.1.5  Catch Diode
        6. 8.2.1.6  Boost Diode (Optional)
        7. 8.2.1.7  Boost Capacitor
        8. 8.2.1.8  Output Voltage
        9. 8.2.1.9  Feedforward Capacitor (Optional)
        10. 8.2.1.10 Calculating Efficiency and Junction Temperature
          1. 8.2.1.10.1 Schottky Diode Conduction Losses
          2. 8.2.1.10.2 Inductor Conduction Losses
          3. 8.2.1.10.3 MOSFET Conduction Losses
          4. 8.2.1.10.4 MOSFET Switching Losses
          5. 8.2.1.10.5 IC Quiescent Losses
          6. 8.2.1.10.6 MOSFET Driver Losses
          7. 8.2.1.10.7 Total Power Losses
          8. 8.2.1.10.8 Efficiency Calculation Example
          9. 8.2.1.10.9 Calculating the LMR2015/20 Junction Temperature
      2. 8.2.2 Application Curves
      3. 8.2.3 LMR12015/20 Circuit Examples
  9. 9 Layout
    1. 9.1 Layout Considerations
      1. 9.1.1 Compact Layout
      2. 9.1.2 Ground Plane and Shape Routing
      3. 9.1.3 FB Loop
      4. 9.1.4 PCB Summary
  10. 10器件和文档支持
    1. 10.1 器件支持
      1. 10.1.1 第三方米6体育平台手机版_好二三四免责声明
      2. 10.1.2 开发支持
        1. 10.1.2.1 使用 WEBENCH® 工具创建定制设计
    2. 10.2 相关链接
    3. 10.3 接收文档更新通知
    4. 10.4 社区资源
    5. 10.5 商标
    6. 10.6 静电放电警告
    7. 10.7 Glossary
  11. 11机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.3.2 Low Input Voltage Considerations

When the input voltage is below 5V and the duty cycle is greater than 75 percent, the gate drive voltage developed across CBOOST might not be sufficient for proper operation of the NMOS switch. In this case, CBOOST should be charged via an external Schottky diode attached to a 5-V voltage rail, see Figure 23. This ensures that the gate drive voltage is high enough for proper operation of the NMOS switch in the triode region. Maintain VBOOST – VSW less than the 6-V absolute maximum rating.

LMR12015 LMR12020 30197026.gifFigure 23. External Diode Charges CBOOST
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