ZHCSDY3 May   2015 LMX2581E

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 简化电路原理图
  5. 5 修订历史记录
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements, MICROWIRE Timing
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Typical Performance Characteristics
        1. 8.3.1.1 Phase Noise Typical Performance Plot Explanations
        2. 8.3.1.2 Other Typical Performance Plot Characteristics Explanations
      2. 8.3.2  Impact of Temperature on VCO Phase Noise
      3. 8.3.3  OSCin INPUT and OSCin Doubler
      4. 8.3.4  R Divider
      5. 8.3.5  PLL N Divider And Fractional Circuitry
        1. 8.3.5.1 Programmable Dithering Levels
        2. 8.3.5.2 Programmable Delta Sigma Modulator Order
      6. 8.3.6  PLL Phase Detector and Charge Pump
      7. 8.3.7  External Loop Filter
      8. 8.3.8  Low Noise, Fully Integrated VCO
        1. 8.3.8.1 VCO Digital Calibration
      9. 8.3.9  Programmable VCO Divider
      10. 8.3.10 0-Delay Mode
      11. 8.3.11 Programmable RF Output Buffers
        1. 8.3.11.1 Choosing the Proper Pullup Component
        2. 8.3.11.2 Choosing the Best Setting for the RFoutA_PWR and RFoutB_PWR Words
      12. 8.3.12 Fastlock
      13. 8.3.13 Lock Detect
        1. 8.3.13.1 Vtune Lock Detect
        2. 8.3.13.2 Digital Lock Detect (DLD)
      14. 8.3.14 Part ID and Register Readback
        1. 8.3.14.1 Uses of Readback
        2. 8.3.14.2 Serial Timing for Readback
      15. 8.3.15 Optimization of Spurs
        1. 8.3.15.1 Phase Detector Spur
        2. 8.3.15.2 Fractional Spur - Integer Boundary Spur
        3. 8.3.15.3 Fractional Spur - Primary Fractional Spurs
        4. 8.3.15.4 Fractional Spur - Sub-Fractional Spurs
        5. 8.3.15.5 Summary of Spurs and Mitigation Techniques
    4. 8.4 Device Functional Modes
      1. 8.4.1 Full Synthesizer Mode
      2. 8.4.2 External VCO Mode
      3. 8.4.3 Powerdown Modes
    5. 8.5 Programming
      1. 8.5.1 Serial Data Input Timing
      2. 8.5.2 Recommended Initial Power on Programming Sequence
      3. 8.5.3 Recommended Sequence for Changing Frequencies
      4. 8.5.4 Triggering Registers
    6. 8.6 Register Maps
      1. 8.6.1 Programming Word Descriptions
        1. 8.6.1.1  Register R15
          1. 8.6.1.1.1 VCO_CAP_MAN — Manual VCO Band Select
          2. 8.6.1.1.2 VCO_CAPCODE[7:0] — Capacitor Value for VCO Band Selection
        2. 8.6.1.2  Register R13
          1. 8.6.1.2.1 DLD_ERR_CNT[3:0] - Digital Lock Detect Error Count
          2. 8.6.1.2.2 DLD_PASS_CNT[9:0] - Digital Lock Detect Success Count
          3. 8.6.1.2.3 DLD_TOL[2:0] — Digital Lock Detect
        3. 8.6.1.3  Registers R10, R9, and R8
        4. 8.6.1.4  Register R7
          1. 8.6.1.4.1 FL_PINMODE[2:0], MUXOUT_PINMODE[2:0], and LD_PINMODE[2:0] — Output Format for Status Pins
          2. 8.6.1.4.2 FL_INV, MUX_INV, LD_INV - Inversion for Status Pins
          3. 8.6.1.4.3 FL_SELECT[4:0], MUXOUT_SELECT[4:0], LD_SELECT[4:0] — State for Status Pins
        5. 8.6.1.5  Register R6
          1. 8.6.1.5.1 RD_DIAGNOSTICS[19:0] — Readback Diagnostics
          2. 8.6.1.5.2 RDADDR[3:0] — Readback Address
          3. 8.6.1.5.3 uWIRE_LOCK - Microwire lock
        6. 8.6.1.6  Register R5
          1. 8.6.1.6.1  OUT_LDEN — Mute Outputs Based on Lock Detect
          2. 8.6.1.6.2  OSC_FREQ[2:0] — OSCin Frequency for VCO Calibration
          3. 8.6.1.6.3  BUFEN_DIS - Disable for the BUFEN Pin
          4. 8.6.1.6.4  VCO_SEL_MODE — Method of Selecting Internal VCO Core
          5. 8.6.1.6.5  OUTB_MUX — Mux for RFoutB
          6. 8.6.1.6.6  OUTA_MUX — Mux for RFoutA
          7. 8.6.1.6.7  0_DLY - Zero Delay Mode
          8. 8.6.1.6.8  MODE[1:0] — Operating Mode
          9. 8.6.1.6.9  PWDN_MODE - Powerdown Mode
          10. 8.6.1.6.10 RESET - Register Reset
        7. 8.6.1.7  Register R4
          1. 8.6.1.7.1 PFD_DLY[2:0] — Phase Detector Delay
          2. 8.6.1.7.2 FL_FRCE — Force Fastlock Conditions
          3. 8.6.1.7.3 FL_TOC[11:0] — Fastlock Timeout Counter
          4. 8.6.1.7.4 FL_CPG[4:0] — Fastlock Charge Pump Gain
          5. 8.6.1.7.5 CPG_BLEED[5:0]
        8. 8.6.1.8  Register R3
          1. 8.6.1.8.1 VCO_DIV[4:0] — VCO Divider Value
          2. 8.6.1.8.2 OUTB_PWR[5:0] — RFoutB Output Power
          3. 8.6.1.8.3 OUTA_PWR[5:0] — RFoutA Output Power
          4. 8.6.1.8.4 OUTB_PD — RFoutB Powerdown
          5. 8.6.1.8.5 OUTA_PD — RFoutA Powerdown
        9. 8.6.1.9  Register R2
          1. 8.6.1.9.1 OSC_2X — OSCin Doubler
          2. 8.6.1.9.2 CPP - Charge Pump Polarity
          3. 8.6.1.9.3 PLL_DEN[21:0] — PLL Fractional Denominator
        10. 8.6.1.10 Register R1
          1. 8.6.1.10.1 CPG[4:0] — PLL Charge Pump Gain
          2. 8.6.1.10.2 VCO_SEL[1:0] - VCO Selection
          3. 8.6.1.10.3 FRAC_ORDER[2:0] — PLL Delta Sigma Modulator Order
          4. 8.6.1.10.4 PLL_R[7:0] — PLL R divider
        11. 8.6.1.11 Register R0
          1. 8.6.1.11.1 ID - Part ID Readback
          2. 8.6.1.11.2 FRAC_DITHER[1:0] — PLL Fractional Dithering
          3. 8.6.1.11.3 NO_FCAL — Disable Frequency Calibration
          4. 8.6.1.11.4 PLL_N - PLL Feedback Divider Value
          5. 8.6.1.11.5 PLL_NUM[21:12] and PLL_NUM[11:0] — PLL Fractional Numerator
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Clocking Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Fractional PLL Application
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
    3. 9.3 Do's and Don'ts
  10. 10Power Supply Recommendations
    1. 10.1 Supply Recommendations
    2. 10.2 Regulator Output Pins
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
    2. 12.2 文档支持
      1. 12.2.1 相关文档
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Vcc Power supply voltage –0.3 3.6 V
VIN Input voltage to pins other than Vcc pins –0.3 (Vcc + 0.3) V
TL Lead temperature (solder 4 sec.) 260 °C
TJ Junction temperature 150 °C
VOSCin Voltage on OSCin (Pin29) ≤1.8 with Vcc Applied
≤1 with Vcc = 0		 Vpp
Storage Temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN TYP MAX UNIT
Vcc Power Supply Voltage 3.15 3.3 3.45 V
TJ Junction Temperature 125 °C
TA Ambient Temperature -40 85 °C

7.4 Thermal Information

THERMAL METRIC(1) LMX2581E UNIT
DAP (WQFN)
32 PINS
RθJA Junction-to-ambient thermal resistance 30 °C/W
RθJC(top) Junction-to-case (top) thermal resistance
RθJB Junction-to-board thermal resistance
ψJT Junction-to-top characterization parameter
ψJB Junction-to-board characterization parameter
RθJC(bot) Junction-to-case (bottom) thermal resistance 4
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

(3.15 V ≤ Vcc ≤ 3.45 V, -40°C ≤ TA ≤ 85°C; except as specified. Typical values are at Vcc = 3.3 V, 25°C.)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CURRENT CONSUMPTION
ICC Entire chip supply current One Output Enabled

OUTx_PWR = 15		 178 mA
ICCCore Supply current except for output buffers Output Buffers and VCO Divider Disabled. 134 mA
ICCRFout Additive current for each output buffer OUTx_PWR = 15 44 mA
ICCVCO_DIV Additive VCO divider current VCO Divider Enabled 20 mA
ICCPD Power down current Device Powered Down
(CE Pin = LOW)		 7 mA
OSCin REFERENCE INPUT
fOSCin OSCin frequency range Doubler Enabled 5 250 MHz
Doubler Disabled 5 900
vOSCin OSCin input voltage AC Coupled 0.4 1.7 Vpp
SpurFoscin Oscin spur Foscin = 100 MHz, Offset = 100 MHz -81 dBc
PLL
fPD Phase detector frequency 200 MHz
KPD Charge-pump gain Gain = 1X 110 µA
Gain = 2X 220
... ...
Gain = 31X 3410
PNPLL_1/f_Norm Normalized PLL 1/f noise
(1)		 Gain =31X
Normalized to 1 GHz carrier and 10 kHz Offset		 –120.8 dBc/Hz
PNPLL_FOM PLL figure of merit
(Normalized Noise Floor)
(1)		 Gain =31X.
Normalized to PLL1 and fPD=1Hz		 –229 dBc/Hz
fRFin External VCO input pin frequency Internal VCOs Bypassed
(OUTA_PD=OUTB_PD=1)		 0.5 2.2 GHz
pRFin External VCO input pin power Internal VCOs Bypassed
(OUTA_PD=OUTB_PD=1)		 0 +8 dBm
SpurFpd Phase detector spurs
(2)		 Fpd = 25 MHz –85 dBc
Fpd = 100 MHz –81
OUTPUTS
pRFoutA+/-
pRFoutB+/-		 Output power level(5)(5) Inductor Pullup
FOUT = 2.7 GHz		 OUTx_PWR=15 7.3 dBm
OUTx_PWR=45 12
H2RFoutX+/- Second harmonic
(6)		 FOUT = 2.7 GHz OUTx_PWR=15 –25 dBc
VCO
fVCO Before the VCO Divider All VCO Cores Combined 1880 3800 MHz
KVCO VCO gain Vtune = 1.3 Volts
 Core 1 12 to 24 MHz/V
Core 2 15 to 30
Core 3 20 to 37
Core 4 21 to 37
ΔTCL Allowable temperature drift
(3)		 VCO not being re-calibrated Fvco ≥2.5 GHz –125 +125 °C
Fvco < 2.5 GHz –100 +125
tVCOCal VCO calibration time
(4)		 fOSCin = 100 MHz
fPD = 100 MHz
Full Band Change 1880 — 3800 MHz		 No Pre-programming 140 µs
With Pre-programming 10
PNVCO VCO phase noise
(OUTx_PWR =15)		 fVCO = 1.9 GHz

Core 1 		10 kHz Offset –85.4 dBc/Hz
100 kHz Offset –114.5
1 MHz Offset –137.0
10 MHz Offset –154.2
40 MHz Offset –156.7
fVCO = 2.2 GHz

Core 2		 10 kHz Offset –84.6 dBc/Hz
100 kHz Offset –114.1
1 MHz Offset –137.5
10 MHz Offset –154.5
40 MHz Offset –156.1
fVCO = 2.7 GHz

Core 3		 10 kHz Offset –81.7 dBc/Hz
100 kHz Offset –112.2
1 MHz Offset –136.0
10 MHz Offset –153.1
40 MHz Offset –155.0
fVCO = 3.3 GHz

Core 4		 10 kHz Offset –79.0 dBc/Hz
100 kHz Offset –108.6
1 MHz Offset –132.6
10 MHz Offset –152.0
40 MHz Offset –155.0
DIGITAL INTERFACE (DATA, CLK, LE, CE, MUXout, BUFEN, LD)
VIH High-level input voltage 1.4 Vcc V
VIL Low level input voltage 0.4 V
IIH High-level input current VIH = 1.75 V –5 5 µA
IIL Low-level input current VIL = 0 V –5 5 µA
VOH High-level output voltage IOH = –500 µA 2 V
VOL Low-Level output voltage IOL = –500 µA 0 0.4 V
(1) The PLL noise contribution is measured using a clean reference and a wide loop bandwidth and is composed into 1/f and flat components. PLL_Flat = PLL_FOM + 20*log(Fvco/Fpd)+10*log(Fpd / 1Hz). PLL_1/f = PLL_1/f_Norm + 20*log(Fvco / 1GHz) - 10*log(Offset/10kHz). Once these two components are found, the total PLL noise can be calculated as PLL_Noise = 10*log( 10PLL_Flat/10) + 10PLL_1/f / 10 )
(2) The spurs at the offset of the phase detector frequency are dependent on many factors, such as he phase detector frequency.
(3) Continuous tuning range over temperature refers to programming the device at an initial temperature and allowing this temperature to drift WITHOUT reprogramming the device. This change could be up or down in temperature and the specification does not apply to temperatures that go outside the recommended operating temperatures of the device.
(4) VCO digital calibration time is the amount of time it takes for the VCO to find the correct frequency band when switching to a new frequency. After the correct frequency band is found , the remaining error is typically less than 1 MHz and then the PLL settles the rest of the error in an analog manner. Pre-programming refers to specifying a band that is close to the final (< 20 MHz), which greatly improves the VCO calibration time.
(5) The output power is dependent of the setup and is also programmable. Consult Application and Implementation for more information.
(6) The harmonics vary as a function of frequency, output termination, board layout, and output power setting.

7.6 Timing Requirements, MICROWIRE Timing

See Figure 1 MIN NOM MAX UNIT
tES Clock-to-enable low time 35 ns
tCS Data-to-clock set up time 10 ns
tCH Data-to-clock hold time 10 ns
tCWH Clock pulse width high 25 ns
tCWL Clock pulse width low 25 ns
tCES Enable-to-clock setup time 10 ns
tEWH Enable pulse width high 10 ns
LMX2581E td_InputTimingDiagram.gifFigure 1. Serial Data Input Timing

7.7 Typical Characteristics

LMX2581E tc02_PLLNoise.gif
Figure 2. Measurement of PLL Figure of Merit and Normalized 1/f Noise
LMX2581E tc08_NarrowbandNoise.gif
Figure 4. Closed Loop Noise for Narrower Bandwidth Filter
LMX2581E tc01_DividerNoise.gif
Figure 6. VCO Output Divider Noise Floor vs. Frequency
LMX2581E tc03_OutputPower.gif
Figure 8. Single-Ended Output Power vs. Frequency
LMX2581E tc12_FinSensitivity.gif
Figure 10. Sensitivity for External VCO Input (Fin) Pin
LMX2581E tc06_OSCinSensitivity.gif
Figure 12. OSCin Input Sensitivity
LMX2581E tc10_KpdNoiseImpact.gif
Figure 3. KPD Impact on PLL Noise Metrics
LMX2581E tc09_WidebandNoise.gif
Figure 5. Closed Loop Noise for Wider Bandwidth
LMX2581E tc04_VCOCalTime.gif
Figure 7. VCO Digital Calibration Time
LMX2581E tc07_RFoutImpedance.gif
Figure 9. Impedance of RFoutX Pins
LMX2581E tc11_FinImpedance.gif
Figure 11. Impedance of External VCO Input (Fin) Pin
LMX2581E tc05_OSCinImpedance.gif
Figure 13. OSCin Input Impedance
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