ZHCSEK3G December   2015  – August 2022 LMX2592

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Functional Description
      1. 7.3.1  Input Signal
      2. 7.3.2  Input Signal Path
      3. 7.3.3  PLL Phase Detector and Charge Pump
      4. 7.3.4  N Divider and Fractional Circuitry
      5. 7.3.5  Voltage Controlled Oscillator
      6. 7.3.6  VCO Calibration
      7. 7.3.7  VCO Doubler
      8. 7.3.8  Channel Divider
      9. 7.3.9  Output Distribution
      10. 7.3.10 Output Buffer
      11. 7.3.11 Phase Adjust
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power Down
      2. 7.4.2 Lock Detect
      3. 7.4.3 Register Readback
    5. 7.5 Programming
      1. 7.5.1 Recommended Initial Power on Programming Sequence
      2. 7.5.2 Recommended Sequence for Changing Frequencies
    6. 7.6 Register Maps
      1. 7.6.1 LMX2592 Register Map – Default Values
        1. 7.6.1.1 Register Descriptions
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  Optimization of Spurs
        1. 8.1.1.1 Understanding Spurs by Offsets
        2. 8.1.1.2 Spur Mitigation Techniques
      2. 8.1.2  Configuring the Input Signal Path
        1. 8.1.2.1 Input Signal Noise Scaling
      3. 8.1.3  Input Pin Configuration
      4. 8.1.4  Using the OSCin Doubler
      5. 8.1.5  Using the Input Signal Path Components
        1. 8.1.5.1 Moving Phase Detector Frequency
        2. 8.1.5.2 Multiplying and Dividing by the Same Value
      6. 8.1.6  Designing for Output Power
      7. 8.1.7  Current Consumption Management
      8. 8.1.8  Decreasing Lock Time
      9. 8.1.9  Modeling and Understanding PLL FOM and Flicker Noise
      10. 8.1.10 External Loop Filter
    2. 8.2 Typical Application
      1. 8.2.1 Design for Low Jitter
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  9. Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 接收文档更新通知
    4. 9.4 支持资源
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 术语表
  10. 10Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RHA|40
散热焊盘机械数据 (封装 | 引脚)
订购信息

Timing Requirements

3.15 V ≤ VCC ≤ 3.45 V, –40°C ≤ TA ≤ 85°C, except as specified. Typical values are at VCC = 3.3 V, TA = 25°C
MINTYPMAXUNIT
MICROWIRE TIMING
tESClock to enable low timeSee Figure 6-15ns
tCSData to clock setup time2ns
tCHData to clock hold time2ns
tCWHClock pulse width high5ns
tCWLClock pulse width low5ns
tCESEnable to clock setup time5ns
tEWHEnable pulse width high2ns
GUID-CEF5D3DB-68A5-4336-817D-4736872E6910-low.gifFigure 6-1 Serial Data Input Timing Diagram

There are several considerations for programming:

  • A slew rate of at least 30 V/µs is recommended for the CLK, DATA, LE
  • The DATA is clocked into a shift register on each rising edge of the CLK signal. On the rising edge of the last CLK signal, the data is sent from the shift registers to a register bank
  • The LE pin may be held high after programming and clock pulses are ignored
  • When CLK and DATA lines are shared between devices, TI recommends diving down the voltage to the CLK, DATA, and LE pins closer to the minimum voltage. This provides better noise immunity
  • If the CLK and DATA lines are toggled while the VCO is in lock, as is sometimes the case when these lines are shared with other parts, the phase noise may be degraded during the time of this programming