SNVS664H June 2010 – October 2015 LMZ14201EXT
PRODUCTION DATA.
MIN | MAX | UNIT | |
---|---|---|---|
VIN, RON to GND | –0.3 | 43.5 | V |
EN, FB, SS to GND | –0.3 | 7 | V |
Junction Temperature | 150 | °C | |
Peak Reflow Case Temperature (30 sec) | 245 | °C | |
Storage Temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(2)(1) | ±2000 | V |
MIN | MAX | UNIT | |
---|---|---|---|
VIN | 6 | 42 | V |
EN | 0 | 6.5 | V |
Operation Junction Temperature | −55 | 125 | °C |
THERMAL METRIC(1)(2) | LMZ14201EXT | UNIT | ||
---|---|---|---|---|
NDW (TO-PMOD) | ||||
7 PINS | ||||
RθJA | Junction-to-ambient thermal resistance | 4-layer JEDEC Printed-Circuit-Board, 100 vias, No air flow | 19.3 | °C/W |
2-layer JEDEC Printed-Circuit-Board, No air flow | 21.5 | |||
RθJC(top) | Junction-to-case (top) thermal resistance | No air flow | 1.9 | °C/W |
PARAMETER | TEST CONDITIONS | MIN(1) | TYP(2) | MAX(1) | UNIT | ||
---|---|---|---|---|---|---|---|
SYSTEM PARAMETERS | |||||||
ENABLE CONTROL(3) | |||||||
VEN | EN threshold trip point | VEN rising | 1.18 | V | |||
over the junction temperature (TJ) range of –55°C to 125°C | 1.1 | 1.26 | |||||
VEN-HYS | EN threshold hysteresis | VEN falling | 90 | mV | |||
SOFT-START | |||||||
ISS | SS source current | VSS = 0 V | 8 | µA | |||
over the junction temperature (TJ) range of –55°C to 125°C | 4.9 | 11 | |||||
ISS-DIS | SS discharge current | -200 | µA | ||||
CURRENT LIMIT | |||||||
ICL | Current limit threshold | DC average | 1.95 | A | |||
over the junction temperature (TJ) range of –55°C to 125°C | 1.4 | 3 | |||||
REGULATION AND OVERVOLTAGE COMPARATOR | |||||||
VFB | In-regulation feedback voltage | VSS >+ 0.8 V TJ = -55°C to 125°C IO = 1 A |
0.798 | V | |||
over the junction temperature (TJ) range of –55°C to 125°C | .777 | 0.818 | |||||
VSS >+ 0.8 V TJ = 25°C IO = 10 mA |
0.786 | 0.802 | 0.818 | V | |||
VFB-OV | Feedback over-voltage protection threshold | 0.92 | V | ||||
IFB | Feedback input bias current | 5 | nA | ||||
IQ | Non-switching input current | VFB = 0.86 V | 1 | mA | |||
ISD | Shutdown quiescent current | VEN = 0 V | 25 | μA | |||
THERMAL CHARACTERISTICS | |||||||
TSD | Thermal shutdown | Rising | 165 | °C | |||
TSD-HYST | Thermal shutdown hysteresis | Falling | 15 | °C | |||
PERFORMANCE PARAMETERS(3) | |||||||
ΔVO | Output Voltage ripple | 8 | mVPP | ||||
ΔVO/ΔVIN | Line regulation | VIN = 12 V to 42 V, IO = 1 A | 0.01% | ||||
ΔVO/IOUT | Load regulation | VIN = 24 V | 1.5 | mV/A | |||
η | Efficiency | VIN = 24 V, VO = 3.3 V, IO = 1 A | 92% |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
ON/OFF TIMER | ||||||
tON-MIN | ON timer minimum pulse width | 150 | ns | |||
tOFF | OFF timer pulse width | 260 | ns |