ZHCSD26E August   2012  – August 2018 LMZ21701

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化原理图
      2.      VIN = 12V 时的效率
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Package Construction
    4. 7.4 Feature Description
      1. 7.4.1 Input Undervoltage Lockout
      2. 7.4.2 Enable Input (EN)
      3. 7.4.3 Soft Start and Tracking Function (SS)
      4. 7.4.4 Power Good Function (PG)
      5. 7.4.5 Output Voltage Setting
      6. 7.4.6 Output Current Limit and Output Short Circuit Protection
      7. 7.4.7 Thermal Protection
    5. 7.5 Device Functional Modes
      1. 7.5.1 PWM Mode Operation
      2. 7.5.2 PSM Operation
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Custom Design With WEBENCH® Tools
        2. 8.2.2.2 Input Capacitor (CIN)
        3. 8.2.2.3 Output Capacitor (COUT)
        4. 8.2.2.4 Soft-start Capacitor (CSS)
        5. 8.2.2.5 Power Good Resistor (RPG)
        6. 8.2.2.6 Feedback Resistors (RFBB and RFBT)
      3. 8.2.3 Application Curves
        1. 8.2.3.1 VOUT = 1.2 V
        2. 8.2.3.2 VOUT = 1.8 V
        3. 8.2.3.3 VOUT = 2.5 V
        4. 8.2.3.4 VOUT = 3.3 V
        5. 8.2.3.5 VOUT = 5.0 V
    3. 8.3 Do's and Don'ts
  9. 9 Power Supply Recommendations
    1. 9.1 Voltage Range
    2. 9.2 Current Capability
    3. 9.3 Input Connection
      1. 9.3.1 Voltage Drops
      2. 9.3.2 Stability
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Minimize the High di/dt Loop Area
      2. 10.1.2 Protect the Sensitive Nodes in the Circuit
      3. 10.1.3 Provide Thermal Path and Shielding
    2. 10.2 Layout Example
      1. 10.2.1 High Density Layout Example for Space Constrained Applications
        1. 10.2.1.1 35 mm² Solution Size (Single Sided)
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 开发支持
        1. 11.1.1.1 使用 WEBENCH® 工具创建定制设计
    2. 11.2 商标
    3. 11.3 静电放电警告
    4. 11.4 术语表
  12. 12机械、封装和可订购信息
    1. 12.1 Tape and Reel Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • SIL|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics(1)

Limits apply over the recommended operating junction temperature (TJ) range of -40°C to +125°C, unless otherwise stated. Minimum and Maximum limits are specified through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise stated the following conditions apply: VIN = 12 V.
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT
SYSTEM PARAMETERS
IQ Operating quiescent current EN = high, IOUT = 0 mA, TJ = -40°C to 85°C
device not switching		 17 25 μA
EN = high, IOUT = 0 mA, TJ = -40°C to 125°C
device not switching		 17 28 μA
ISD Shutdown current EN = low, TJ = -40°C to 85°C 1.5 4 μA
EN = low, TJ = -40°C to 125°C 1.5 5 μA
VINUVLO Input under voltage lock out rising threshold 2.8 2.9 3 V
VINUVLO-HYS Input under voltage lock out hysteresis 0.125 0.18 0.26 V
TSD Thermal shutdown Rising Threshold 160 °C
TSD-HYST Thermal shutdown hysteresis 30 °C
CONTROL
VIH, ENABLE Enable logic HIGH voltage 0.9 V
VIL, ENABLE Enable logic LOW voltage 0.3 V
ILKG Input leakage current EN = VIN or GND 0.01 1 μA
VTH_PG Power Good threshold voltage Rising (% VOUT) 92% 95% 98%
Falling (% VOUT) 87% 90% 93%
VOL_PG Power Good output low voltage IPG = -2 mA 0.07 0.3 V
ILKG_PG Power Good leakage current VPG = 1.8 V 1 400 nA
ISS Softstart Pin source current 2.5 2.84 3.2 μA
POWER STAGE
RDS(ON) High-Side MOSFET ON Resistance VIN ≥ 6 V 82 mΩ
VIN = 3 V 120
Low-Side MOSFET ON Resistance VIN ≥ 6 V 40 mΩ
VIN = 3 V 50
L Integrated power inductor value 2.2 μH
DCR Integrated power inductor DC resistance 92 mΩ
ICL-HS High-Side MOSFET Current Limit TA = 25°C 1.4 1.8 2.2 A
ICL-LS Low-Side MOSFET Current Limit TA = 25°C 1.2 A
ICL-DC Output (DC) current limit VOUT = 5 V, TA = 85°C 1.3 A
OUTPUT
VREF Internal reference voltage 0.7869 0.803 0.8191 V
IFB Feedback pin leakage current VFB = 0.8 V 1 100 nA
VOUT Light load initial voltage accuracy Power save mode, COUT = 22 µF, TA = -40°C to 85°C, 1% FB Resistors -2.3% 2.8%
VOUT Load regulation VOUT = 3.3 V
PWM mode operation		 0.05% / A
VOUT Line regulation 3 V ≤ VIN ≤ 17 V, VOUT= 3.3 V, IOUT = 1000 mA
PWM mode operation		 0.02% / V
SYSTEM CHARACTERISTICS
η Full Load Efficiency VOUT = 3.3 V, IOUT = 1000 mA 93%
Light Load Efficiency VOUT = 3.3 V, IOUT = 1 mA 72%
(1) Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate National’s Average Outgoing Quality Level (AOQL).
(2) Typical numbers are at 25°C and represent the most likely parametric norm.
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |