ZHCSBC7E JULY   2013  – December 2019 LMZ31710

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化应用
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics (PVIN = VIN = 12 V)
    7. 6.7 Typical Characteristics (PVIN = VIN = 5 V)
    8. 6.8 Typical Characteristics (PVIN = 3.3 V, VIN = 5 V)
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  VIN and PVIN Input Voltage
      2. 7.3.2  3.3-V PVIN Operation
      3. 7.3.3  Adjusting the Output Voltage (0.6 V to 5.5 V)
      4. 7.3.4  Capacitor Recommendations For the LMZ31710 Power Supply
        1. 7.3.4.1 Capacitor Technologies
          1. 7.3.4.1.1 Electrolytic, Polymer-Electrolytic Capacitors
          2. 7.3.4.1.2 Ceramic Capacitors
          3. 7.3.4.1.3 Tantalum, Polymer-Tantalum Capacitors
        2. 7.3.4.2 Input Capacitor
        3. 7.3.4.3 Output Capacitor
      5. 7.3.5  Transient Response
        1. 7.3.5.1 Transient Response Waveforms
      6. 7.3.6  Power Good (PWRGD)
      7. 7.3.7  Light Load Efficiency (LLE)
      8. 7.3.8  SYNC_OUT
      9. 7.3.9  Parallel Operation
      10. 7.3.10 Power-Up Characteristics
      11. 7.3.11 Pre-Biased Start-Up
      12. 7.3.12 Remote Sense
      13. 7.3.13 Thermal Shutdown
      14. 7.3.14 Output On/Off Inhibit (INH)
      15. 7.3.15 Slow Start (SS/TR)
      16. 7.3.16 Overcurrent Protection
      17. 7.3.17 Synchronization (CLK)
      18. 7.3.18 Sequencing (SS/TR)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Programmable Undervoltage Lockout (UVLO)
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Custom Design With WEBENCH® Tools
        2. 8.2.2.2 Setting The Output Voltage
        3. 8.2.2.3 Setting the Switching Frequency
        4. 8.2.2.4 Input Capacitance
        5. 8.2.2.5 Output Capacitance
    3. 8.3 Additional Application Schematics
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Considerations
    2. 10.2 Layout Examples
      1. 10.2.1 EMI
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 开发支持
        1. 11.1.1.1 使用 WEBENCH® 工具创建定制设计
      2. 11.1.2 第三方米6体育平台手机版_好二三四免责声明
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 Glossary
  12. 12机械、封装和可订购信息
    1. 12.1 Tape and Reel Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.4 Thermal Information

THERMAL METRIC(1) LMZ31710 UNIT
RVQ (B3QFN)
42 PINS
RθJA Junction-to-ambient thermal resistance(2) 13.3 °C/W
RθJB Junction-to-board thermal resistance(3) 1.6 °C/W
ψJT Junction-to-top characterization parameter(4) 5.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) The junction-to-ambient thermal resistance, RθJA, applies to devices soldered directly to a 100 mm × 100 mm double-sided PCB with 2 oz. copper and natural convection cooling. Additional airflow reduces RθJA.
(3) The junction-to-top characterization parameter, ψJT, estimates the junction temperature, TJ, of a device in a real system, using a procedure described in JESD51-2A (sections 6 and 7). TJ = ψJT × Pdis + TT; where Pdis is the power dissipated in the device and TT is the temperature of the top of the device.
(4) The junction-to-board characterization parameter, ψJB, estimates the junction temperature, TJ, of a device in a real system, using a procedure described in JESD51-2A (sections 6 and 7). TJ = ψJB × Pdis + TB; where Pdis is the power dissipated in the device and TB is the temperature of the board 1 mm from the device.
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