The device contains a thermal shutdown protection circuit to disable the device when the junction temperature (T_J) of the pass transistor rises to T_SD(shutdown) (typical). Thermal shutdown hysteresis makes sure that the device resets (turns on) when the temperature falls to T_SD(reset) (typical). Thermal shutdown circuit specifications are defined in Section 5.5.

The thermal time-constant of the semiconductor die is fairly short, thus the device can cycle on and off when thermal shutdown is reached until power dissipation is reduced. Power dissipation during start up can be high from large V_IN – V_OUT voltage drops across the device or from high inrush currents charging large output capacitors. Under some conditions, the thermal shutdown protection disables the device before start-up completes.

For reliable operation, limit the junction temperature to the maximum listed in the Section 5.3 table. Operation above this maximum temperature causes the device to exceed operational specifications. Although the internal protection circuitry of the device is designed to protect against thermal overall conditions, this circuitry is not intended to replace proper heat sinking. Continuously running the device into thermal shutdown or above the maximum recommended junction temperature reduces long-term reliability.