4 Revision History
Changes from Revision Q (December 2022) to Revision R (July 2023)
- Widening IGND spec limits to accommodate complete VOUT rangeGo
Changes from Revision P (February 2022) to Revision Q (December 2022)
- 更改了特性 部分Go
- 向应用 部分添加了最后一个要点Go
- 更改了说明 部分Go
- Changed Description column and added footnote to Pin
Functions table
Go
- Changed condition statement and curve titles and added curves for
new chip in Typical Characteristics sectionGo
- Changed Overview sectionGo
- Changed Functional Block Diagram figureGo
- Changed Feature Description section and added
subsectionsGo
- Added Output Pulldown sectionGo
- Changed Device Functional Modes section: changed Normal
Operation section, added Device Functional Mode Comparison,
Dropout Operation, and Disabled sections, and deleted
Shutdown Mode sectionGo
- Changed Application Information section: deleted previous
information and added new subsectionsGo
- Added Recommended Capacitor
Types sectionGo
- Added Input and Output Capacitor
Requirements sectionGo
- Added start-up behavior discussion to Noise Bypass Capacitor
(CBYPASS) sectionGo
- Added Reverse Current
sectionGo
- Added Power Dissipation
(PD) sectionGo
- Added Estimating Junction Temperature
sectionGo
- Changed LOW and HIGH pin voltages and deleted slew rate discussion
from ON/OFF Operation sectionGo
- Changed Application Curves sectionGo
- Changed Layout Diagram figureGo
- Added Device Nomenclature sectionGo